TM PolarP V = - 200V IXTK90P20P DSS I = - 90A Power MOSFET IXTX90P20P D25 R 44m DS(on) P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G D V T = 25 C to 150 C - 200 V S DSS J Tab V T = 25 C to 150 C, R = 1M - 200 V DGR J GS V Continuous 20 V GSS PLUS247 (IXTX) V Transient 30 V GSM I T = 25 C - 90 A D25 C I T = 25 C, Pulse Width Limited by T - 270 A DM C JM I T = 25 C - 90 A A C G E T = 25 C 3.5 J D AS C Tab S dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J G = Gate D = Drain P T = 25 C 890 W D C S = Source Tab = Drain T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L International Standard Packages TM T 1.6 mm (0.062in.) from Case for 10s 260 C Rugged PolarP Process SOLD Avalanche Rated M Mounting Force (PLUS247) 20..120 / 4.5..27 N/lb d Mounting Torque (TO-264) 1.13 / 10 Nm/lb.in Fast Intrinsic Diode Low Package Inductance Weight PLUS247 6 g TO-264 10 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250A - 200 V DSS GS D High-Side Switches V V = V , I = -1mA - 2.0 - 4.5 V GS(th) DS GS D Push Pull Amplifiers I V = 20V, V = 0V 100 nA DC Choppers GSS GS DS Automatic Test Equipment I V = V , V = 0V - 50 A DSS DS DSS GS Current Regulators T = 125C - 250A J R V = -10V, I = 0.5 I , Note 1 44 m DS(on) GS D D25 2016 IXYS CORPORATION, All Rights Reserved DS99933D(6/16) IXTK90P20P IXTX90P20P Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 30 51 S fs DS D D25 C 12 nF iss C V = 0V, V = - 25V, f = 1MHz 2210 pF oss GS DS C 250 pF rss t 32 ns d(on) Resistive Switching Times t 60 ns Terminals: 1 - Gate r V = -10V, V = 0.5 V , I = 0.5 I 2 - Drain GS DS DSS D D25 3 - Source t 89 ns d(off) R = 1 (External) 4 - Drain G Dim. Millimeter Inches t 28 ns f Min. Max. Min. Max. A 4.82 5.13 .190 .202 Q 205 nC g(on) A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q V = -10V, V = 0.5 V , I = 0.5 I 45 nC gs GS DS DSS D D25 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 Q 80 nC gd b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 R 0.14 C/W thJC D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R 0.15 C/W thCS e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 Source-Drain Diode P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Symbol Test Conditions Characteristic Values Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 I V = 0V - 90 A S GS T 1.57 1.83 .062 .072 I Repetitive, Pulse Width Limited by T - 360 A SM JM TM PLUS 247 Outline V I = - 45A, V = 0V, Note 1 - 3.2 V SD F GS t 315 ns rr I = - 45A, -di/dt = -150A/ s F Q 6.6 C RM V = -100V, V = 0V R GS I - 42 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537