About MOSFET

Taiwan Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Package / Case
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Packaging
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Technology
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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Channel Mode
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Qualification
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM900N06CH X0G


MOSFET 60V 11A Single N-Channel Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 85573
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USD 0.226
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11 A60 V76 mOhmsN - Channel 1.2 V + 150 C25 WThrough HoleTO - 251S - 3TubeSi1 Channel10 V9.3 nCEnhancement  
TSM038N03PQ33 RGG


MOSFET Power MOSFET, N-CHAN 30V, 80A, 3.8mOhm
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Taiwan Semiconductor 32215
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USD 0.2725
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80 A30 V2.9 mOhmsN - Channel 1.2 V- 55 C+ 150 C66 WSmd/SmtPDFN33 - 8Cut TapeSi1 Channel10 V24 nCEnhancement  
TSM250N02CX RFG


MOSFET 20V, 5.8A, Single N- Channel Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 26773
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USD 0.1092
Multiples of: 1

5.8 A20 V20 mOhmsN - Channel 400 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V7.7 nCEnhancement  
TSM4953DCS RLG


MOSFET -30V, -4.9A, Dual P-Channel Power MOSFET
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Taiwan Semiconductor 24244
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USD 0.75
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4.9 A30 V50 mOhmsP - Channel, Pnp 1.5 V- 55 C+ 150 C2.5 WSmd/SmtSOP - 8Cut TapeSi2 Channel- 10 V28 nCEnhancement  
TSM260P02CX6 RFG


MOSFET -20V -6.5A Single P-Channel Power MOSFET
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Taiwan Semiconductor 22862
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USD 0.1978
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6.5 A20 V21 mOhmsP - Channel 300 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel4.5 V19.5 nCEnhancement  
TSM2328CX RFG


MOSFET 100V 1.5A Single N-Channel Power MOSFET
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Taiwan Semiconductor 20902
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USD 0.4943
Multiples of: 1

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TSM6963SDCA RVG


MOSFET -20V -4.5A Dual P-Ch annel Power MOSFET
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Taiwan Semiconductor 20568
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USD 0.8
Multiples of: 1

           Cut Tape       
TSM085P03CV RGG


MOSFET -30V -64A Single P-C hannel Power MOSFET
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Taiwan Semiconductor 19924
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USD 1.0249
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           Cut Tape       
TSM2314CX RFG


MOSFET 20V 4.9A Single N-Ch annel Power MOSFET
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Taiwan Semiconductor 526
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USD 0.3458
Multiples of: 1

4.9 A20 V27 mOhmsN - Channel 600 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V11 nCEnhancement  
TSM2314CX


MOSFET 20V N channel MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 0
6 to 16 Weeks Calender.png

USD 0.267
Multiples of: 1

4.9 A20 V27 mOhmsN - Channel 600 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V11 nCEnhancement  
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