TSM085P03CV Taiwan Semiconductor P-Channel Power MOSFET -30V, -64A, 8.5m FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Low gate charge for fast power switching V -30 V DS 100% UIS and R tested g V = -10V 8.5 GS Compliant to RoHS directive 2011/65/EU and in R (max) m DS(on) accordance to WEEE 2002/96/EC V = -4.5V 14 GS Halogen-free according to IEC 61249-2-21 Q 27 nC g APPLICATIONS DC-DC Converters Battery Power Management Load Switch BLDC Motor Drives PDFN33 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS T = 25C -64 C (Note 1) Continuous Drain Current I A D T = 25C -14 A Pulsed Drain Current I -256 A DM (Note 2) Single Pulse Avalanche Current I -23 A AS (Note 2) Single Pulse Avalanche Energy E 79 mJ AS T = 25C 50 C Total Power Dissipation P W D T = 125C 10 C T = 25C 2.4 A Total Power Dissipation P W D T = 125C 0.5 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 2.5 C/W JC Junction to Ambient Thermal Resistance R 53 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. 1 Version: A1605 TSM085P03CV Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = -250A BV -30 -- -- V GS D DSS Gate Threshold Voltage V = V , I = -250A V -1.2 -1.6 -2.5 GS DS D GS(TH) V Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 nA GS DS GSS V = 0V, V = -30V GS DS -- -- -1 Drain-Source Leakage Current I A V = 0V, V = -30V DSS GS DS -- -- -100 T = 125C J V = -10V, I = -14A -- 7.1 8.5 Drain-Source On-State Resistance GS D R m DS(on) (Note 3) V = -4.5V, I = -14A -- 11 14 GS D (Note 3) V = -5V, I = -14A Forward Transconductance g -- 38 -- S DS D fs (Note 4) Dynamic V = -10V, GS Total Gate Charge Q -- 55 -- g V = -15V, I = -14A DS D Total Gate Charge Q -- 27 -- g nC V = -4.5V, GS Gate-Source Charge Q -- 9.2 -- gs V = -15V, I = -14A DS D Gate-Drain Charge Q -- 9.9 -- gd Input Capacitance C -- 3234 -- iss V = 0V, V = -15V GS DS Output Capacitance C -- 396 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 251 -- rss Gate Resistance f = 1.0MHz, open drain R 1.6 6 12 g (Note 4) Switching Turn-On Delay Time t -- 7.2 -- d(on) Turn-On Rise Time t -- 2.6 -- r V = -10V, V = -15V, GS DS ns Turn-Off Delay Time I = -14A, R = 2, t -- 56 -- D G d(off) Turn-Off Fall Time t -- 27 -- f Source-Drain Diode (Note 3) Forward Voltage V -- -- -1 V V = 0V, I = -14A SD GS S Reverse Recovery Time t -- 23 -- ns rr I = -14A , S Reverse Recovery Charge Q -- 11 -- nC dI/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. L = 0.3mH, V = -10V, V = -25V, R = 25, I = -23A, Starting T = 25C GS DD G AS J 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM085P03CV RGG PDFN33 5,000pcs / 13 Reel 2 Version: A1605