TSM2328 100V N-Channel MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Source 3. Drain V 100 V DS R (max) 250 m DS(on) Q 11.1 nC g Block Diagram Features Low R 250m (Max.) DS(ON) Low gate charge typical 11.1nC (Typ.) High performance trench technology Ordering Information Part No. Package Packing TSM2328CX RFG SOT-23 3Kpcs / 7 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET o Absolute Maximum Rating (T =25 C unless otherwise noted) A Parameter Symbol Limit Unit 100 Drain-Source Voltage V V DS 20 Gate-Source Voltage V V GS 1.5 Continuous Drain Current I A D (Note 1) 6 Pulsed Drain Current I A DM 0.6 Continuous Source Current (Diode Conduction) I A S o Total Power Dissipation T = 25 C P 1.38 W A D Operating Junction Temperature T 150 C J o -55 to +150 Storage Temperature Range T C STG Thermal Performance Parameter Symbol Limit Unit o 55 Thermal Resistance - Junction to Foot R C/W JF o 100 Thermal Resistance - Junction to Ambient R C/W JA 1/5 Version: B14 TSM2328 100V N-Channel MOSFET o Electrical Specifications (T =25 C unless otherwise noted) J Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 100 -- -- V GS D DSS Drain-Source On-State Resistance V = 10V, I = 1.5A R -- -- 250 GS D DS(ON) m Gate Threshold Voltage V = V , I = 250A V 1.0 -- 2.5 V DS GS D GS(TH) Zero Gate Voltage Drain Current V = 80V, V = 0V I -- -- 1 A DS GS DSS Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS On-State Drain Current V = 5V, V = 10V I 6 -- -- A DS GS D(ON) Forward Transfer Conductance V = 15V, I = 1.5A g -- 4 -- S DS D fs Diode Forward Voltage I = 1A, V = 0V V -- 1.2 -- V S GS SD (Note 2) Dynamic Total Gate Charge Q -- 11.1 -- g V = 80V, I = 1.5A, DS D Gate-Source Charge Q -- -- 4.4 nC gs V = 5V GS Gate-Drain Charge Q -- -- gd 3 Input Capacitance C -- 975 -- iss V = 25V, V = 0V, DS GS Output Capacitance C -- 38 -- oss pF f = 1.0MHz Reverse Transfer Capacitance C -- 27 -- rss (Note 3) Switching Turn-On Delay Time t -- 9 -- d(on) V = 30V, I = 1A, DD D Turn-On Rise Time t -- -- 9.4 r V = 10V, R =30, ns GEN L Turn-Off Delay Time t -- 26.8 -- d(off) R =6 G Turn-Off Fall Time t -- 2.6 -- f Note: 1. Limited by maximum junction temperature. 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Guaranteed by design, not subject to production testing 2/5 Version: B14