About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot DMG6402LVT-7


MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A
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Diodes Incorporated 416130
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USD 0.0626
Multiples of: 3000

6 A30 V30 mOhmsN - Channel 1.5 V- 55 C+ 150 C1.75 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel20 V11.4 nCEnhancement  
DMG1029SVQ-7


MOSFET MOSFET BVDSS: 41V~60V SOT563 T&R 3K
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Diodes Incorporated 416130
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USD 0.1214
Multiples of: 3000

500 mA , - 360 mA60 v , - 60 V1.7 Ohms , 4 OhmsN - Channel, P - Channel 1 v , - 3 V- 55 C+ 150 C1 WSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel20 V0.3 nC , 0.28 nCEnhancement  
DMC3071LVT-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 415758
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USD 0.0954
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4.6 A , 3.3 A30 V50 mOhms , 95 mOhmsN - Channel, P - Channel 1 v , 2.5 V- 55 C+ 150 C1.1 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel20 V4.5 nC , 6.5 nCEnhancement  
DMP2104LP-7


20V 1.5A 500mW 150mO@4.5V,900mA P Channel X1-DFN1411-3 MOSFETs ROHS
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Diodes Incorporated 407868
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USD 0.107
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1.5 A20 V150 mOhmsP - Channel 450 mV- 55 C+ 150 C500 mWSmd/SmtDFN1411 - 3Cut TapeSi1 Channel4.5 V Enhancement  
SI1416EDH-T1-GE3


30V 3.9A 58mO@10V,3.1A 2.8W N Channel SC-70-6(SOT-363) MOSFETs ROHS
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Vishay 401719
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USD 0.1104
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3.9 A30 V58 mOhmsN - Channel12 V1.4 V- 55 C+ 150 C2.8 WSmd/SmtSC - 70 - 6ReelSi1 Channel10 V7.5 nCEnhancement Trenchfet
PMV55ENEAR


MOSFET PMV55ENEA/TO-236AB/REEL 7" Q3/
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Nexperia 399069
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USD 0.1138
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3.1 A60 V60 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.19 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V12.7 nCEnhancement  
SI2369BDS-T1-GE3


MOSFET 30-V D-S MOSFET P-CHANNEL
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Vishay 391650
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USD 0.1219
Multiples of: 1

           Cut Tape       
DMN3023L-7


MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A
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Diodes Incorporated 387030
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USD 0.0755
Multiples of: 3000

6.2 A30 V25 mOhmsN - Channel 800 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V18.4 nCEnhancement  
BSS314PEH6327XTSA1


Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
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Infineon 160050
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USD 0.0694
Multiples of: 3000

            Optimos P3      
BSS83PH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
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Infineon 107670
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USD 0.0775
Multiples of: 3000

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