BSS83PH6327XTSA1 Infineon

BSS83PH6327XTSA1 electronic component of Infineon
BSS83PH6327XTSA1 Infineon
BSS83PH6327XTSA1 MOSFETs
BSS83PH6327XTSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSS83PH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS83PH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSS83PH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Datasheet: BSS83PH6327XTSA1 Datasheet (PDF)
Price (USD)
6000: USD 0.0627 ea
Line Total: USD 376.2 
Availability : 69840
  
Ship by Mon. 20 Oct to Fri. 24 Oct
QtyUnit Price
6000$ 0.0627
12000$ 0.0583
15000$ 0.0579
45000$ 0.056

Availability 69840
Ship by Mon. 20 Oct to Fri. 24 Oct
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0627
12000$ 0.0583
15000$ 0.0579
45000$ 0.056


Availability 126548
Ship by Thu. 16 Oct to Mon. 20 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4325
10$ 0.2675
100$ 0.1464
500$ 0.1122
1000$ 0.1001
3000$ 0.0781
6000$ 0.0715
9000$ 0.0627


Availability 26378
Ship by Thu. 16 Oct to Mon. 20 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.504
10$ 0.371
50$ 0.2534
100$ 0.2142
228$ 0.084


Availability 436500
Ship by Mon. 20 Oct to Fri. 24 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.098
6000$ 0.0905
9000$ 0.0634


Availability 26190
Ship by Mon. 20 Oct to Fri. 24 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0962
6000$ 0.0888
9000$ 0.0621

   
Manufacturer
Product Category
Technology
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Power Dissipation
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS83PH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS83PH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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BSS 83 P SIPMOS Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage V -60 V DS Enhancement mode Drain-source on-state resistance R 2 W DS(on) Avalanche rated Continuous drain current I -0.33 A D Logic Level 3 dv/dt rated 2 Qualified according to AEC Q101 1 VPS05161 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Marking Pin 1 PIN 2 PIN 3 BSS 83 P PG-SOT-23 H 6327: 3000pcs/r. G S D YAs Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit Continuous drain current I A D T = 25 C -0.33 A T = 70 C -0.27 A Pulsed drain current I -1.32 D puls T = 25 C A Avalanche energy, single pulse E 9.5 mJ AS I = -0.33 A , V = -25 V, R = 25 W D DD GS Avalanche energy, periodic limited by T E 0.036 jmax AR Reverse diode dv/dt dv/dt 6 kV/s I = -0.33 A, V = -48 V, di/dt = 200 A/s, S DS T = 150 C jmax Gate source voltage V V 20 GS Power dissipation P 0.36 W tot T = 25 C A Operating and storage temperature T , T -55...+150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Class 0 ESD Class JESD22-A114-HBM Rev. 1.6 Page 1 2014-07-07BSS 83 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point R - - 150 K/W thJS ( Pin 3 ) SMD version, device on PCB: R thJA min. footprint - - 350 2 1) 6 cm cooling area - - 300 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V -60 - - V (BR)DSS V = 0 V, I = -250 A GS D Gate threshold voltage, V = V V -1 -1.5 -2 GS DS GS(th) I = -80 A D Zero gate voltage drain current I A DSS V = -60 V, V = 0 V, T = 25 C - -0.1 -1 DS GS j V = -60 V, V = 0 V, T = 125 C - -10 -100 DS GS j Gate-source leakage current I - -10 -100 nA GSS V = -20 V, V = 0 V GS DS Drain-source on-state resistance R - 2 3 W DS(on) V = -4.5 V, I = -0.27 A GS D Drain-source on-state resistance R - 1.4 2 DS(on) V = -10 V, I = -0.33 A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.6 Page 2 2014-07-07

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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