About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
25N06


TO-252-2 MOSFETs ROHS
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TECH PUBLIC Availability : 11892
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USD 0.0934

Multiples of: 5

                   
IRFR010PBF-BE3


N-Channel 50V 8.2A (Tc) 25W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay Availability : 11888
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USD 0.6664

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8.2 A50 V200 mOhmsN - Channel 4 V- 55 C+ 150 C25 WSMD/SMTTO - 252 - 3TubeSi1 Channel- 20 V , + 20 V6.7 nCEnhancement  
DMG2305UX-7-MS


20V 4A 35Ω@4.5V 1.3W P Channel SOT-23 MOSFETs ROHS
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MSKSEMI Availability : 11886
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USD 0.0231

Multiples of: 10

                   
IPD90P03P4L04ATMA2


P-Channel 30V 90A (Tc) 137W (Tc) Surface Mount PG-TO252-3-11
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Infineon Availability : 11883
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USD 0.8448

Multiples of: 1

          TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Digi - Reel®Mosfet (Metal Oxide)      
BSS223PW H6327


Infineon Technologies MOSFET P-Ch -20V -390mA SOT-323-3
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Infineon Availability : 11871
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USD 0.0363

Multiples of: 1

- 390 mA- 20 V1.2 OhmsP - Channel - 900 mV- 55 C+ 150 C250 mWSmd/SmtPG - SOT - 323Reel-1 Channel+/- 12 V- 500 pCEnhancement  
SK3400


MOSFET N Trench 30V 5.8A 1.5V @ 250uA 35 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Shikues Availability : 11869
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USD 0.0261

Multiples of: 10

                   
2N7002VA


MOSFET N-Chan Enhancement Mode Field Effect
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ON Semiconductor Availability : 11862
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USD 0.2992

Multiples of: 1

280 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C250 mWSmd/SmtSOT - 563F - 6ReelSi2 Channel20 V Enhancement  
BSC059N04LS6ATMA1


MOSFET TRENCH <= 40V
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Infineon Availability : 11862
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USD 0.4138

Multiples of: 1

59 A40 V5.9 mOhmsN - Channel 1.3 V- 55 C+ 175 C38 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V9.4 nCEnhancement  
SRK7002LT1G


MOSFET N Trench 60V 115mA 2.5V @ 1mA 7.5 Ω @ 500mA,10V SOT23 RoHS
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Leshan Availability : 11854
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USD 0.0149

Multiples of: 20

                   
AO3424


MOSFET N Channel 30V 2A 1.5V @ 250uA 35mΩ @ 5.8A,10V SC-59 RoHS
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Shikues Availability : 11853
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USD 0.0386

Multiples of: 10

                   
BSC0904NSI


MOSFET N-Ch 30V 78A TDSON-8 OptiMOS
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Infineon Availability : 11847
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USD 0.2706

Multiples of: 1

78 A30 V3.7 mOhmsN - Channel  - 55 C+ 150 C37 WSmd/SmtTDSON - 8ReelSi1 Channel20 V17 nC  Optimos
SI2318CDS


SOT-23-3 MOSFETs ROHS
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TECH PUBLIC Availability : 11828
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USD 0.0643

Multiples of: 5

                   
FDMC3020DC


MOSFET 30V NChan Dual Cool PowerTrench SyncFET
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ON Semiconductor Availability : 11820
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USD 1.2885

Multiples of: 1

17 A30 V5 mOhmsn - channel 1.9 V- 55 C+ 150 C3 Wsmd/smtPOWER 33Reelsi2 channel20 V15.5 nC  powertrench
FDD8874


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor Availability : 11814
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USD 0.752

Multiples of: 1

116 A30 V5.1 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Powertrench
BSC050NE2LS


MOSFET N-Channel 25V MOSFET
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Infineon Availability : 11811
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USD 0.2398

Multiples of: 1

58 A25 V5 mOhmsN - Channel 1.2 V- 55 C+ 150 C28 WSmd/SmtTDSON - 8ReelSi1 Channel20 V10.4 nCEnhancement Optimos
NTR4501NT1G


MOSFET 20V 3.2A N-Channel
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ON Semiconductor Availability : 11800
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USD 0.0513

Multiples of: 5

3.2 A20 V80 mOhmsN - Channel 650 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V2.4 nCEnhancement  
DMN62D0U-13


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated Availability : 11795
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USD 0.0347

Multiples of: 10

380 mA60 V1.2 OhmsN - Channel 500 mV- 55 C+ 150 C380 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 20 V500 pCEnhancement  
PMN30XPAX


20V 5.2A 33mO@5.2A,8V P Channel TSOP-6 MOSFETs ROHS
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Nexperia Availability : 11792
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USD 0.1089

Multiples of: 1

5.2 A20 V33 mOhmsP - Channel 1.3 V- 55 C+ 175 C1.7 WSMD/SMTSOT - 457 - 6Cut Tape , Reel , ReelSi1 Channel- 12 V , + 12 V11 nCEnhancement  
SI7137DP-T1-GE3


Vishay Semiconductors MOSFET -20V 1.95mOhm10V 60A P-Ch G-III
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Vishay Availability : 11782
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USD 0.3507

Multiples of: 1

           -       
BSZ0909NS


MOSFET N-Channel MOSFET 34V 36A
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Infineon Availability : 11777
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USD 0.1771

Multiples of: 1

36 A34 V12 mOhmsN - Channel  - 55 C+ 150 C25 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V6.1 nC  Optimos
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