IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Low drive current DPAK (TO-252) Surface-mount Fast switching D Ease of paralleling G Excellent temperature stability Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 G S DESCRIPTION N-Channel MOSFET The power MOSFET technology is the key to Vishays advanced line of power MOSFET transistors. The efficien t geometry and unique processing of this latest State of the PRODUCT SUMMARY Art design achieves: very low on-state resistance V (V) 50 DS combined with high transconductance superior reverse R ()V = 10 V 0.20 DS(on) GS energy and diode recovery dV/dt capability. Q (Max.) (nC) 10 The power MOSFET transistors also feature all of the wel l g established advantages of MOSFETS such as voltage Q (nC) 2.6 gs control, very fast switching, ease of paralleling and Q (nC) 4.8 gd temperature stability of the electrical parameters. Configuration Single Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The DPAK (TO-252) surface-mount package brings the advantages of power MOSFETs to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9012, SiHFR9012 is provided on 16 mm tape. The straight lead option IRFU9012, SiHFU9012 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, dc-to-dc converters, and a wide range of consumer products. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) Lead (Pb)-free and halogen-free SiHFR010-GE3 SiHFR010TR-GE3 SiHFR010TRL-GE3 IRFR010PbF-BE3 Lead (Pb)-free IRFR010PbF IRFR010TRPbF IRFR010TRLPbF IRFR010TRRPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 50 DS V Gate-source voltage V 20 GS T = 25 C 8.2 C Continuous drain current V at 10 V I GS D T = 100 C 5.2 C A a Pulsed drain current I 33 DM b Avalanche current I 1.5 AS Linear derating factor 0.20 W/C Maximum power dissipation T = 25 C P 25 W C D c Peak diode recovery dV/dt dV/dt 2.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 100 H, R = 25 DD J g c. I 8.2 A, dI/dt 130 A/s, V 40 V, T 150 C SD DD J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0466-Rev. C, 17-May-2021 Document Number: 91420 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR010, SiHFR010 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 110 thJA Case-to-sink R -1.7 - C/W thCS Maximum junction-to-case (drain) R -- 5.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 50 - - V DS GS D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 500 nA GSS GS V = 50 V, V = 0 V - - 250 DS GS A Zero gate voltage drain current I DSS V = 40 V, V = 0 V, T = 125 C - - 1000 DS GS J b Drain-source on-state resistance R V = 10 V I = 4.6 A -0.16 0.20 DS(on) GS D Forward transconductance g V 50 V, I = 3.6 A 2.1 3.1 - S fs DS D Dynamic Input capacitance C - 250 - iss V = 0 V, GS Output capacitance C -V = 25 V, 150- pF oss DS f = 1.0 MHz, see fig. 10 Reverse transfer capacitance C -29- rss Total gate charge Q -6.7 10 g I = 7.3 A, V = 40 V, D DS Gate-source charge Q -1V = 10 V .82.6 nC gs GS b see fig. 6 and 13 Gate-drain charge Q -3.24.8 gd Turn-on delay time t -11 17 d(on) Rise time t -33 50 r V = 25 V, I = 7.3 A, DD D ns b R = 24 , R = 3.3 , see fig. 10 g D Turn-off delay time t -1218 d(off) Fall time t -2335 f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G c die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 8.2 S showing the A integral reverse G a Pulsed diode forward current I -- 33 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 8.2 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t 41 86 190 ns rr b T = 25 C, I = 7.3 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q 0.15 0.33 0.78 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0466-Rev. C, 17-May-2021 Document Number: 91420 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000