About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN62D1SFB-7B


Diodes Incorporated MOSFET MOSFET BVDSS
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Diodes Incorporated Availability : 12066
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USD 0.044

Multiples of: 5

410 mA60 V1.4 OhmsN - Channel 1.3 V- 55 C+ 150 C470 mWSmd/SmtX1 - DFN1006 - 3Tape And ReelSi1 Channel20 V2.8 nCEnhancement  
80N06


60V 80A 5.3mΩ 4V N Channel TO-252 MOSFETs ROHS
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HL Availability : 12066
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USD 0.112

Multiples of: 5

                   
DMG2305UX-7


20V 5A 1.31W 45mΩ@4.5V 1V@250uA P Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS Availability : 12062
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USD 0.0244

Multiples of: 10

                   
SQ3426EV-T1_BE3


MOSFET N-CHANNEL 60V D-S
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Vishay Availability : 12058
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USD 0.3466

Multiples of: 1

7 A60 V32 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V6.3 nCEnhancement TrenchFET
BSZ110N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
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Infineon Availability : 12056
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USD 0.4345

Multiples of: 1

            Optimos 5      
BSZ180P03NS3 G


Infineon Technologies MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
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Infineon Availability : 12049
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USD 0.2398

Multiples of: 1

39.6 A30 V13.5 mOhmsP - Channel 3.1 V- 55 C+ 150 C40 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V30 nCEnhancement Optimos
AO4406-HXY


30V 8.5A 1.5W 18mΩ@10V,7A N Channel SOP-8 MOSFETs ROHS
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HXY MOS Availability : 12046
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USD 0.0488

Multiples of: 5

                   
DMN61D9UWQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated Availability : 12036
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USD 0.0517

Multiples of: 1

340 mA60 V1.2 OhmsN - Channel 500 mV- 55 C+ 150 C440 mW  Cut TapeSi1 Channel5 V400 pCEnhancementAec - Q101 
AP2317A


20V 6A 17mΩ@4.5V,6A 1.8W P Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Quan Li Availability : 12029
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USD 0.086

Multiples of: 10

                   
BSC160N10NS3GATMA1


Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
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Infineon Availability : 12027
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USD 0.4774

Multiples of: 1

            Optimos 3      
TN2640N3-G


Transistor: N-MOSFET; unipolar; 400V; 2A; 740mW; TO92
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Microchip Availability : 12013
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USD 0.9837

Multiples of: 25

2 A400 V5 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
FDD8778


MOSFET 25V N-Channel PowerTrench MOSFET
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ON Semiconductor Availability : 11987
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USD 0.3975

Multiples of: 1

35 A25 V11.6 mOhmsn - channel  - 55 C+ 175 C39 Wsmd/smtTO - 252Reelsi1 channel20 V enhancement powertrench
AO4828


SOP-8 MOSFETs ROHS
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Youtai Availability : 11976
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USD 0.1072

Multiples of: 5

                   
IPB065N03LGATMA1


MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
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Infineon Availability : 11974
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USD 0.8527

Multiples of: 1

50 A30 V5.4 mOhmsn - channel 1 V- 55 C+ 175 C56 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V11 nCenhancement optimos
2309


60V 2A 160mΩ 2.5V P Channel SOT23 MOSFETs ROHS
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HL Availability : 11973
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USD 0.0215

Multiples of: 20

                   
BSC005N03LS5IATMA1


MOSFET TRENCH <= 40V
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Infineon Availability : 11963
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USD 0.9911

Multiples of: 1

433 A30 V550 uOhmsN - Channel 1.5 V- 55 C+ 175 C188 WSMD/SMTTDSON - 8 - FLCut Tape , ReelSi1 Channel- 20 V , + 20 V122 nCEnhancement  
DMC25D1UVT-7


Diodes Incorporated MOSFET 20V Enh Mode FET
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Diodes Incorporated Availability : 11952
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USD 0.1342

Multiples of: 1

500 mA , - 3.5 A25 v , - 12 V4 Ohms , 100 mOhmsN - Channel, P - Channel 650 mV , - 350 mV- 55 C+ 150 C1.3 WSmd/SmtTSOT - 26 - 6ReelSi2 Channel8 v , 8 V0.9 nC , 24.5 nCEnhancement  
BSS138


50V 0.22A 0.35W 3.50Ω@10V,0.22A 1.5V@1mA 6pF@25V N Channel 27pF@25V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK Availability : 11950
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USD 0.0103

Multiples of: 20

                   
FDN335N


SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

TECH PUBLIC Availability : 11931
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USD 0.0365

Multiples of: 10

                   
FDMS8095AC


MOSFET PT5 150V Dual N & P-Channel Power
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ON Semiconductor Availability : 2859
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USD 1.384

Multiples of: 1

27 A , - 2.2 A150 v , - 150 V58 mOhms , 2.171 OhmsN - Channel, P - Channel 2 v , - 2 V- 55 C+ 150 C50 w , 12.5 WSmd/SmtPOWER56 - 8ReelSi2 Channel+/- 20 v , +/- 25 V21 nC , 2.8 nCEnhancement Powertrench
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