About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDG6332C


MOSFET 20V N&P-Channel Power Trench
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ON Semiconductor Availability : 11640
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USD 0.1818

Multiples of: 3000

700 mA20 V300 mOhmsN - Channel, P - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 6Cut TapeSi2 Channel12 V Enhancement Powertrench
SI3457CDV-T1-GE3


P-Channel 30 V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
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Vishay Availability : 11640
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USD 0.1925

Multiples of: 3000

5.1 A30 V74 mOhmsP - Channel 1 V- 55 C+ 150 C3 WSmd/SmtTSOP - 6Cut TapeSi1 Channel10 V10 nCEnhancement Trenchfet
SQJA37EP-T1_GE3


MOSFET -30V Vds -/+20V Vgs PowerPAK SO-8L
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Vishay Availability : 11640
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USD 0.224

Multiples of: 3000

30 A30 V9.2 mOhmsP - Channel 2.5 V- 55 C+ 175 C45 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V100 nCEnhancement  
DMP2039UFDE4-7


Diodes Incorporated MOSFET MOSFET BVDSS: 25V-30 X2-DFN2020-6 T&R 3K
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Diodes Incorporated Availability : 11640
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USD 0.2279

Multiples of: 3000

7.3 A25 V70 mOhmsP - Channel 1 V- 55 C+ 150 C690 mWSmd/SmtX2 - DFN2020 - 6ReelSi1 Channel8 V28.2 nCEnhancement  
STN1NF20


MOSFET N-Channel 1.1 Ohm 200V 1A STripFET II
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STMicroelectronics Availability : 11640
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USD 0.2474

Multiples of: 4000

1 A200 V1.5 OhmsN - Channel 2 V- 55 C+ 150 C2 WSmd/SmtSOT - 223ReelSi1 Channel10 V5.7 nCEnhancement Stripfet
FDC6310P


MOSFET Dual P-Ch 2.5V Spec Power Trench
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ON Semiconductor Availability : 11640
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USD 0.2521

Multiples of: 3000

2.2 A20 V125 mOhmsP - Channel  - 55 C+ 150 C960 mWSmd/SmtSSOT - 6ReelSi2 Channel12 V Enhancement Powertrench
FDN5632N_F085


Fairchild Semiconductor MOSFET Trans MOS N-Ch 60V 1.7A
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ON Semiconductor Availability : 11640
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USD 0.2546

Multiples of: 3000

1.6 A60 V98 mOhmsN - Channel  - 55 C+ 150 C1.1 WSmd/SmtSSOT - 3ReelSi1 Channel20 V Enhancement Ultrafet
IRF8721TRPBF


MOSFET N Trench 30V 14A 2.35V @ 25uA 8.5 mΩ @ 14A,10V SOIC-8_150mil RoHS
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Infineon Availability : 11640
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USD 0.2577

Multiples of: 4000

            Hexfet®      
TSM2318CX RFG


MOSFET 40V, 3.9A, Single N-Channel Power MOSFET
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Taiwan Semiconductor Availability : 11640
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USD 0.278

Multiples of: 12000

3.9 A       1.25 W       Enhancement  
IRF9Z34NPBF


Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
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Infineon Availability : 11640
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USD 0.3073

Multiples of: 1000

            Hexfet®      
DMC1029UFDB-7


MOSFET 20V Comp Pair Enh 8Vgs 914pF 10.5nC
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Diodes Incorporated Availability : 11640
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USD 0.3187

Multiples of: 1

         Smd/SmtDFN1612 - 6Cut TapeSi      
SIA456DJ-T1-GE3


MOSFET 200V 2.6A 19W 1.38ohm @ 4.5V
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Vishay Availability : 11640
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USD 0.3338

Multiples of: 3000

2.6 A200 V1.38 OhmsN - Channel 600 mV- 55 C+ 150 C19 WSmd/SmtSC - 70ReelSi1 Channel4.5 V5 nCEnhancement Trenchfet, Powerpak
PJD16P06A_L2_00001


MOSFETs 60V P-Channel Enhancement Mode MOSFET
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Panjit Availability : 11640
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USD 0.3851

Multiples of: 1

                   
IPS70R950CEAKMA1


MOSFET CONSUMER
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Infineon Availability : 11640
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USD 0.4089

Multiples of: 1

 700 V        TO - 251 - 3Tubesi     coolmos
IRLR3105TRPBF


Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
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Infineon Availability : 11640
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USD 0.4311

Multiples of: 1

25 A55 V43 mOhmsN - Channel 3 V- 55 C+ 175 C57 WSmd/SmtDPAKReelSi1 Channel16 V13.3 nCEnhancement  
SQS966ENW-T1_GE3


MOSFET 60V Vds 20V Vgs PowerPAK 1212-8W
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Vishay Availability : 11640
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USD 0.4403

Multiples of: 1

6 A60 V36 mOhmsN - Channel 1.5 V- 55 C+ 175 C27.8 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi2 Channel10 V6.2 nCEnhancement  
NDT014L


MOSFET N-Ch LL FET Enhancement Mode
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ON Semiconductor Availability : 11640
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USD 0.4444

Multiples of: 4000

2.8 A60 V170 mOhmsN - Channel  - 65 C+ 150 C3 WSmd/SmtSOT - 223ReelSi1 Channel20 V Enhancement  
STL30N10F7


MOSFET N-Ch 100V 0.027 Ohm typ. 8A STripFET VII
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 11640
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USD 0.484

Multiples of: 3000

8 A100 V27 mOhmsN - Channel20 V4.5 V- 55 C+ 175 C4.8 WSmd/SmtPowerflat - 8 5X6ReelSi1 Channel20 V14 nC  Stripfet
TSM500P02DCQ RFG


MOSFET -20V -4.7A Dual P-Channel Power MOSFET
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Taiwan Semiconductor Availability : 11640
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USD 0.5427

Multiples of: 1

           Cut Tape       
SI7972DP-T1-GE3


MOSFET Dual N-Ch 30V Vds 7.1nC Qg Typ
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay Availability : 11640
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USD 0.6574

Multiples of: 3000

           Cut TapeSi      
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