About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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Image  Information Image Stock Code(▲▼)Description
Manufacturer
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ISC037N03L5ISATMA1


30V 3.7mO@30A,10V N Channel TDSON-8-6 MOSFETs ROHS
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Infineon Availability : 10930
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USD 0.2035

Multiples of: 1

78 A30 V3.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C37 WSMD/SMTTDSON - FL - 8Optimos ~ Strongirfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V8.5 nCEnhancement OptiMOS ~ StrongIRFET
SiR5623DP-T1-RE3


MOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 24 mohm a. 10V, 46 mohm a. 4.5V
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Vishay Availability : 10918
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USD 0.7568

Multiples of: 1

37.1 A60 V24 mOhmsP - Channel 2.6 V- 55 C+ 150 C59.5 WSMD/SMTPOWERPAK SO - 8 Si1 Channel- 20 V , + 20 V21.8 nCEnhancement  
IRF530PBF-BE3


MOSFET 100V N-CH
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Vishay Availability : 10914
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USD 0.6555

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14 A100 V160 mOhmsN - Channel 4 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V26 nCEnhancement  
RQ3E080BNTB


ROHM Semiconductor MOSFET
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ROHM Availability : 10911
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USD 0.1177

Multiples of: 1

8 A30 V11 mOhmsN - Channel 2.5 V  2 WSmd/SmtH SMT - 8ReelSi1 Channel20 V14.5 nC   
BSD214SNH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
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Infineon Availability : 10907
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USD 0.0539

Multiples of: 1

            Optimos 2      
2N7002KD


60V 340mA 900mO@10V,500mA 150mW 2 N-Channel SOT-363 MOSFETs ROHS
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FUXINSEMI Availability : 10905
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USD 0.018

Multiples of: 20

                   
AO6420


SOT23-6 MOSFETs ROHS
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TECH PUBLIC Availability : 10903
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USD 0.1169

Multiples of: 5

                   
FDMS5352


Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8
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ON Semiconductor Availability : 10893
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USD 1.43

Multiples of: 1

            Powertrench®      
BSC120N03LS G


Infineon Technologies MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3
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Infineon Availability : 10890
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USD 0.1815

Multiples of: 1

12 A30 V12 mOhmsN - Channel20 V1 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V15 nCEnhancement Optimos
AO3407


30V 4.5A 1.4W 38m@10V,4.5A 1.5V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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ElecSuper Availability : 10883
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USD 0.0243

Multiples of: 20

                   
STN1HNK60


Transistor: N-MOSFET; unipolar; 600V; 0.4A; 3.3W; SOT223
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STMicroelectronics Availability : 10883
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USD 0.1538

Multiples of: 5

            Supermesh      
AO7800


SOT-363 MOSFETs ROHS
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TECH PUBLIC Availability : 10872
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USD 0.0695

Multiples of: 5

                   
TN0620N3-G-P002


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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Microchip Availability : 10864
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USD 1.0153

Multiples of: 1

250 mA200 V8 OhmsN - Channel20 V - 55 C+ 150 C1 WThrough HoleTO - 92 - 3Reel 1 Channel20 V Enhancement  
IPD90N06S407ATMA2


MOSFET MOSFET
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Infineon Availability : 10860
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USD 0.625

Multiples of: 1

   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
FDMC610P


MOSFET P-CH PowerTrench MOSFET
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ON Semiconductor Availability : 10860
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USD 1.2012

Multiples of: 1

- 80 A- 12 V3.9 mOhmsP - Channel  - 55 C+ 150 C2.4 WSmd/SmtPOWER 33 - 8ReelSi1 Channel    Powertrench
BSC150N03LDGATMA1


Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
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Infineon Availability : 10851
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USD 0.3069

Multiples of: 1

            Optimos 3      
BSC0502NSIATMA1


DFN-8 MOSFETs ROHS
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Infineon Availability : 10848
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USD 0.5521

Multiples of: 1

           Cut Tape       
WST6225


MOSFET P Trench 20V 5.1A 1V @ 250uA 55 mΩ @ 3A,4.5V SOT-23 (SOT-23-3) RoHS
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Winsok Availability : 10843
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USD 0.0481

Multiples of: 5

                   
AO4606


SOP-8 MOSFETs ROHS
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Youtai Availability : 10830
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USD 0.0652

Multiples of: 5

                   
CMUDM7001 TR


Central Semiconductor MOSFET N-Ch Enh Mode FET 20Vds 10Vgs 250mW
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Central Semiconductor Availability : 10816
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USD 0.0803

Multiples of: 1

100 mA20 V3 OhmsN - Channel 0.9 V- 65 C+ 150 C250 mWSmd/SmtSOT - 523 - 3ReelSi1 Channel10 V0.566 nCEnhancement Ultramini
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