About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTDV3055L104T4G


ON Semiconductor MOSFET NFET 60V 12A 0.104R
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ON Semiconductor Availability : 10536
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USD 0.3718

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12 A60 V104 mOhmsn - channel 2 V- 55 C+ 175 C48 Wsmd/smtDPAK - 3Reelsi1 channel 20 nC aec - q101 
EFC4627R-TR


MOSFET NCH+NCH 2.5V DRIVE S
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ON Semiconductor Availability : 10523
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USD 0.0924

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           Cut TapeSi      
SIR5607DP-T1-RE3


MOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 7 mohm a. 10V, 12 mohm a. 4.5V
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Vishay Availability : 10517
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USD 1.2261

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90.9 A60 V7 mOhmsP - Channel 2.6 V- 55 C+ 150 C104 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V31.7 nCEnhancement  
IRF840PBF


N-Channel 500 V 8A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay Availability : 10503
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USD 0.4417

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8 A500 V850 mOhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V63 nCEnhancement  
IRF640NPBF


200V 18A 150mΩ@10V,11A 150W 4V@250uA N Channel +175℃@(Tj) TO-220C MOSFETs ROHS
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JSMSEMI Availability : 10500
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USD 0.2351

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SQ2308CES-T1_GE3


MOSFET 60V 2.3A 2watt AEC-Q101 Qualified
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Vishay Availability : 10485
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USD 0.1531

Multiples of: 5

2.3 A60 V136 mOhmsN - Channel 2 V- 55 C+ 175 C2 WSmd/SmtSOT - 23 - 3Reel  20 V3.5 nC  Trenchfet
BSZ025N04LSATMA1


Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
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Infineon Availability : 10484
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USD 0.7242

Multiples of: 1

            Optimos      
SI2301


MOSFET P Trench 20V 3A 1V @ 250uA 110 mΩ @ 3A,4.5V SOT-23 (SOT-23-3) RoHS
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Bourne Availability : 10476
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USD 0.0161

Multiples of: 20

                   
STP13NK60Z


N-Channel 600 V 13A (Tc) 150W (Tc) Through Hole TO-220
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STMicroelectronics Availability : 10476
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USD 1.11

Multiples of: 1

13 A600 V550 mOhmsN - Channel  - 55 C+ 150 C150 WThrough HoleTO - 220 - 3 Si1 Channel30 V66 nCEnhancement Supermesh
TSM3446CX6 RFG


MOSFET 20V 5.3A Single N-Channel Power MOSFET
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Taiwan Semiconductor Availability : 10475
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USD 0.3465

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           Cut Tape       
IRF9510PBF


P-Channel 100 V 4A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay Availability : 10470
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USD 0.3239

Multiples of: 1

4 A100 V1.2 OhmsP - Channel 2 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V8.7 nCEnhancement  
MMFTP84


Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.25W; SOT23
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Diotec Availability : 10463
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USD 0.0231

Multiples of: 1

130 mA60 V10 OhmsP - Channel 800 mV + 150 C250 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V Enhancement MMFTP84
DMN1004UFV-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated Availability : 10458
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USD 0.2024

Multiples of: 1

70 A12 V2.8 mOhmsN - Channel 300 mV- 55 C+ 150 C1.9 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel8 V47 nCEnhancement  
FQD17P06TM


Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
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ON Semiconductor Availability : 10453
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USD 0.4785

Multiples of: 1

            Qfet®      
IRF7495TRPBF


MOSFET N Trench 100V 7.3A 4V @ 250uA 22 mΩ @ 4.4A,10V SOIC-8_150mil RoHS
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Infineon Availability : 10449
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USD 0.5753

Multiples of: 1

            Hexfet®      
AO6601


SOT-23-6 MOSFETs ROHS
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Youtai Availability : 10431
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USD 0.0537

Multiples of: 5

                   
IPD50N04S4-10


Infineon Technologies MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
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Infineon Availability : 10425
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USD 0.2992

Multiples of: 1

50 A40 V9.3 mOhmsN - Channel     Smd/SmtTO - 252 - 3ReelSi1 Channel   Aec - Q101Optimos
IRLMS2002TRPBF


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC Availability : 10423
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USD 0.0832

Multiples of: 5

                   
IRF7240TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai Availability : 10423
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USD 0.1655

Multiples of: 5

                   
DMN2230UQ-7


MOSFET 20V N-Ch Enh FET 20Vdss 2.0A 7A 600mW
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Diodes Incorporated Availability : 10417
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USD 0.1144

Multiples of: 1

2 A20 V110 mOhmsN - Channel 500 mV- 55 C+ 150 C600 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V2.3 nCEnhancementAec - Q101 
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