About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CPH6337-TL-W


MOSFET PCH 1.8V DRIVE SERIE
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ON Semiconductor Availability : 8730
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USD 0.1536

Multiples of: 1

- 3.5 A- 12 V215 mOhmsP - Channel - 1.4 V + 150 C1.6 WSmd/SmtCPH - 6ReelSi1 Channel+/- 10 V5.6 nCEnhancement  
SI1480DH-T1-GE3


Vishay Semiconductors MOSFET 100V 200mOhm10V 2.3A N-Ch
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Vishay Availability : 8730
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USD 0.1639

Multiples of: 3000

2.6 A100 V200 mOhmsN - Channel20 V1.6 v to 3 V- 55 C+ 150 C2.8 WSmd/SmtSOT - 363 - 6ReelSi1 Channel20 V1.8 nCEnhancement Thunderfet Trenchfet
MCH6336-TL-W


MOSFET PCH 1.8V DRIVE SERIE
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ON Semiconductor Availability : 8730
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USD 0.177

Multiples of: 1

         smd/smtSOT - 363 - 6Cut Tapesi      
SI8483DB-T2-E1


MOSFET -12V 26mOhm@4.5V 16A P-Ch G-III
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Vishay Availability : 8730
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USD 0.1815

Multiples of: 3000

16 A12 V22 mOhmsP - Channel 800 mV- 55 C+ 150 C13 WSmd/SmtMICRO - FOOT 1.5 x 1ReelSi1 Channel10 V65 nCEnhancement Trenchfet
SIA427ADJ-T1-GE3


MOSFET -8V Vds 5V Vgs PowerPAK SC-70
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Vishay Availability : 8730
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USD 0.183

Multiples of: 3000

- 12 A- 8 V16 mOhmsP - Channel5 V- 800 mV- 55 C+ 150 C19 WSmd/SmtSC - 70 - 6Reel   33 nC   
FDN8601


Fairchild Semiconductor MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor Availability : 8730
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USD 0.19

Multiples of: 3000

2.7 A100 V85.4 mOhmsn channel 3 V  1.5 Wsmd/smtSSOT - 3Cut Tapesi1 channel20 V3 nC  powertrench
SIAA40DJ-T1-GE3


MOSFET 40V Vds 20V Vgs PowerPAK SC-70
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Vishay Availability : 8730
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USD 0.1994

Multiples of: 1

           Cut TapeSi     Trenchfet
SI2323DS-T1-E3


MOSFET 20V 3.7A 0.039Ohm
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Vishay Availability : 8730
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USD 0.225

Multiples of: 3000

4.7 A20 V39 mOhmsP - Channel 400 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V19 nCEnhancement Trenchfet
FDC3601N


MOSFET Dual N-Ch 100V Spec Power Trench
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ON Semiconductor Availability : 8730
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USD 0.239

Multiples of: 3000

1 A100 V500 mOhmsN - Channel  - 55 C+ 150 C960 mWSmd/SmtSSOT - 6ReelSi2 Channel20 V Enhancement Powertrench
FDMA1028NZ


Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET
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ON Semiconductor Availability : 8730
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USD 0.2406

Multiples of: 3000

            Powertrench®      
SISH625DN-T1-GE3


MOSFET -30V Vds; 20V Vgs PowerPAK 1212-8SH
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Vishay Availability : 8730
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USD 0.254

Multiples of: 3000

- 35 A- 30 V7 mOhmsP - Channel - 2.5 V- 55 C+ 150 C52 WSmd/SmtPowerpak1212 - 8Cut TapeSi1 Channel20 V126 nCEnhancement Trenchfet, Powerpak
SI3473CDV-T1-GE3


MOSFET 12V 8.0A 4.2W 22mohm @ 4.5V
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Vishay Availability : 8730
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USD 0.267

Multiples of: 3000

8 A12 V22 mOhmsP - Channel 400 mV- 55 C+ 150 C4.2 WSmd/SmtTSOP - 6ReelSi1 Channel- 4.5 V43 nCEnhancement Trenchfet
TN2404K-T1-GE3


MOSFET 240V 0.2A 0.36W 4.0ohms @ 10V
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Vishay Availability : 8730
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USD 0.3594

Multiples of: 3000

200 mA257 V2.2 OhmsN - Channel 1.65 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.87 nCEnhancement Trenchfet
SISS65DN-T1-GE3


MOSFET -30V Vds -+20V Vgs PowerPAK 1212-8S
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Vishay Availability : 8730
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USD 0.3615

Multiples of: 1

94 A30 V4.6 mOhmsP - Channel 2.3 V- 55 C+ 150 C65.8 WSmd/SmtPOWERPAK - 1212 - 8S - 8Cut TapeSi1 Channel20 V138 nCEnhancement Trenchfet, Powerpak
HT8KB5TB1


MOSFETs 40V 12A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KB5 is a low on-resistance MOSFET ideal for switching applications.
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ROHM Availability : 8730
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USD 0.4257

Multiples of: 1

12 A40 V47 mOhmsN - Channel 2.5 V- 55 C+ 150 C13 WSMD/SMTH SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.5 nCEnhancement  
PSMN030-60YS,115


NXP Semiconductors MOSFET Single N-Channel 60V 116A 56W 49.6mOhms
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Nexperia Availability : 8730
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USD 0.5664

Multiples of: 1

21 A54 V49.6 mOhmsN - Channel 3 V- 55 C+ 175 C56 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V13 nCEnhancement  
SIS468DN-T1-GE3


MOSFET 80V 19.5mOhm@10V 30A N-Ch MV T-FET
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Vishay Availability : 8730
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USD 0.5799

Multiples of: 3000

30 A80 V19.5 mOhmsn - channel 1.5 V- 55 C+ 150 C52 Wsmd/smtPOWERPAK 1212 - 8Reelsi1 channel20 V28 nCenhancement trenchfet, powerpak
SI7949DP-T1-E3


Mosfet Array 2 P-Channel (Dual) 60V 3.2A 1.5W Surface Mount PowerPAK® SO-8 Dual
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Vishay Availability : 8730
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USD 0.6422

Multiples of: 3000

3.2 A- 60 V64 mOhmsP - Channel20 V - 55 C+ 150 C1.5 WSmd/SmtSO - 8ReelSi   Enhancement Trenchfet
Hot TN5335K1-G


Transistor: N-MOSFET; unipolar; 350V; 0.75A; 360mW; SOT23-3
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Microchip Availability : 6487
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USD 0.5931

Multiples of: 1

110 mA350 V15 OhmsN - Channel 600 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel10 V Enhancement  
VN2110K1-G


Transistor: N-MOSFET; unipolar; 100V; 0.6A; 360mW; SOT23-3
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Microchip Availability : 5098
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USD 0.4741

Multiples of: 1

200 mA100 V4 OhmsN - Channel 800 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel10 V Enhancement  
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