About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RV2C001ZPT2L


ROHM Semiconductor MOSFET
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ROHM Availability : 7396
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USD 0.0594

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100 mA20 V2.5 OhmsP - Channel 1 V  100 mWSmd/SmtVML1006 - 3ReelSi1 Channel10 V    
SI2318DS-T1-E3-MS


40V 4A 36mΩ@10V,3A 1.56W 2.5V@250uA N Channel SOT-23 MOSFETs ROHS
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MSKSEMI Availability : 7396
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USD 0.0624

Multiples of: 5

                   
DMN61D8LVT-13


MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA
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Diodes Incorporated Availability : 7394
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USD 0.1595

Multiples of: 1

           ReelSi      
FDD8445


Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; DPAK
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ON Semiconductor Availability : 7394
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USD 0.4389

Multiples of: 1

   N Channel               
BSS126IXTSA1


N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount PG-SOT23-3-5
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Infineon Availability : 7384
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USD 0.0539

Multiples of: 1

          TO - 236 - 3 , SC - 59 , SOT - 23 - 3Tape And ReelMosfet (Metal Oxide)      
IRFU3607PBF


Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK
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Infineon Availability : 7367
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USD 0.7018

Multiples of: 1

80 A75 V7.34 mOhmsN - Channel    140 WThrough HoleIPAKTubeSi1 Channel20 V56 nC   
RQ5A040ZPTL


P-Channel 12 V 4A (Ta) 700mW (Ta) Surface Mount TSMT3
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ROHM Availability : 7355
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USD 0.2816

Multiples of: 1

4 A12 V30 mOhmsP - Channel 300 mV- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel10 V30 nCEnhancement  
AP4910GD


1PCSN-Channel&1PCSP-Channel DFN-8(4.9x5.8) MOSFETs ROHS
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Quan Li Availability : 7354
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USD 0.3873

Multiples of: 5

                   
BSC010NE2LS


MOSFET N-Channel 25V MOSFET
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Infineon Availability : 7351
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USD 0.5973

Multiples of: 1

100 A25 V1 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtTDSON - 8ReelSi1 Channel10 V64 nCEnhancement Optimos
NTF2955T1G


SOT-223 MOSFETs ROHS
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TECH PUBLIC Availability : 7347
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USD 0.4433

Multiples of: 5

                   
NTA4153NT3G


MOSFET NFET SC75 20V 915MA
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ON Semiconductor Availability : 7338
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USD 0.0901

Multiples of: 1

915 mA20 V230 mOhmsN - Channel 450 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 416 - 3Cut TapeSi1 Channel4.5 V1.82 nCEnhancement  
20N02


20V 20A 12mΩ 1V N Channel TO-252 MOSFETs ROHS
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HL Availability : 7333
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USD 0.0357

Multiples of: 10

                   
SI2301CDS


null 3A 400mW 112mΩ@4.5V,2.8A P Channel SOT-23 MOSFETs ROHS
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FUXINSEMI Availability : 7332
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USD 0.0106

Multiples of: 50

                   
SI3932DV


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC Availability : 7323
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USD 0.0825

Multiples of: 5

                   
TSM2309CX RFG


MOSFET -60V, -3.1A, Single P-Channel Power MOSFET
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Taiwan Semiconductor Availability : 7323
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USD 0.0975

Multiples of: 5

3.1 A60 V160 mOhmsP - Channel 1.2 V + 50 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V8.2 nCEnhancement  
2N7002KT1G-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper Availability : 7307
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USD 0.0073

Multiples of: 10

                   
CEDM8001VL TR


MOSFET 20V P-Ch Enh FET 10Vgs 100mA 100mW
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Central Semiconductor Availability : 7305
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USD 0.0935

Multiples of: 1

         Smd/SmtSOT - 883VLCut TapeSi      
SQ2389ES-T1_GE3


MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified
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Vishay Availability : 7299
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USD 0.1631

Multiples of: 1

4.1 A40 V94 mOhmsP - Channel 1.5 V- 55 C+ 175 C3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V8.2 nCEnhancementAec - Q101Trenchfet
SI2312CDS-T1-GE3


MOSFET 20V Vds 8V Vgs SOT-23
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Vishay Availability : 7114
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USD 0.1051

Multiples of: 5

6 A20 V31.8 mOhmsN - Channel 450 mV- 55 C+ 150 C2.1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V18 nCEnhancement Trenchfet
DMN63D8LW-13


MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A
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Diodes Incorporated Availability : 6906
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USD 0.0192

Multiples of: 20

380 mA30 V2.8 OhmsN - Channel 800 mV- 55 C+ 150 C420 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V0.9 nCEnhancement  
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