IRFR3607PbF IRFU3607PbF Applications High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET Uninterruptible Power Supply D V 75V DSS High Speed Power Switching Hard Switched and High Frequency Circuits R typ. 7.34m DS(on) max. 9.0m G I 80A D (Silicon Limited) Benefits Improved Gate, Avalanche and Dynamic S I 56A D (Package Limited) dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability D-Pak I-Pak IRFR3607PbF IRFU3607PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C 80 D C Continuous Drain Current, VGS 10V (Silicon Limited) I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 56 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 56 D C GS I 310 DM Pulsed Drain Current P T = 25C Maximum Power Dissipation 140 W D C Linear Derating Factor 0.96 W/C V Gate-to-Source Voltage 20 V GS 27 dv/dt Peak Diode Recovery V/ns T Operating Junction and -55 to + 175 C J T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 120 mJ AS (Thermally limited) Avalanche Current I 46 A AR Repetitive Avalanche Energy E 14 mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case C/W JC 1.045 R 50 JA Junction-to-Ambient (PCB Mount) R 110 JA Junction-to-Ambient www.irf.com 1 04/30/2010 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.096 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 7.34 9.0 V = 10V, I = 46A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 100A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DSS DS GS 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 115 S V = 50V, I = 46A DS D Q Total Gate Charge 56 84 nC I = 46A g D Q Gate-to-Source Charge 13 V = 38V gs DS Q Gate-to-Drain Mille) Charge 16 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 40 I = 46A, V =0V, V = 10V sync g gd D DS GS R Internal Gate Resistance 0.55 G(int) t Turn-On Delay Time 16 ns V = 49V d(on) DD t Rise Time 110 I = 46A r D t Turn-Off Delay Time 43 R = 6.8 d(off) G t Fall Time 96 V = 10V f GS C Input Capacitance 3070 pF V = 0V iss GS C Output Capacitance 280 V = 50V oss DS C Reverse Transfer Capacitance 130 = 1.0MHz rss C eff. (ER) 380 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 610 V = 0V, V = 0V to 60V Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current A MOSFET symbol S 80 (Body Diode) showing the G I Pulsed Source Current 310 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 46A, V = 0V SD J S GS t Reverse Recovery Time 33 50 ns T = 25C V = 64V, rr J R 39 59 T = 125C I = 46A J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 32 48 nC rr J T = 125C 47 71 J I Reverse Recovery Current 1.9 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on I 46A, di/dt 1920A/s, V V , T 175C. SD DD (BR)DSS J Calculated continuous current based on maximum allowable junction Pulse width 400s duty cycle 2%. temperature. Bond wire current limit is 56A. Note that current C eff. (TR) is a fixed capacitance that gives the same charging time oss limitations arising from heating of the device leads may occur with as C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature. When mounted on 1 square PCB (FR-4 or G-10 Material). For recom- Limited by T , starting T = 25C, L = 0.12mH Jmax J mended footprint and soldering techniques refer to application note AN-994. R = 25 , I = 46A, V =10V. Part not recommended for use G AS GS R is measured at T approximately 90C. J above this value. 2 www.irf.com