About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTR4003NT3G


ON Semiconductor MOSFET NFET 30V .56A 1500M
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ON Semiconductor Availability : 6887
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USD 0.0366

Multiples of: 10

500 mA30 V1 OhmsN - Channel20 V800 mV- 55 C+ 150 C690 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel4 V1.15 nCEnhancement  
TM4828


SOP-8 MOSFETs ROHS
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Tritech-MOS Availability : 6722
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USD 0.0909

Multiples of: 5

                   
DMN3016LFDE-13


Diodes Incorporated MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm
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Diodes Incorporated Availability : 6722
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USD 0.1012

Multiples of: 1

10 A30 V16 mOhmsN - Channel 1.4 V- 55 C+ 150 C2.02 WSmd/SmtU - DFN2020 - E - 6Tape And ReelSi1 Channel20 V25.1 nCEnhancement  
AP15P03Q


MOSFET P Channel 30V 30A(Tc) 2.5V @ 250uA 20mO @ 9A,10V DFN3*3 RoHS
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Quan Li Availability : 6719
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USD 0.1687

Multiples of: 5

                   
IRFBC20PBF-BE3


MOSFET 600V N-CH
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Vishay Availability : 6717
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USD 0.5428

Multiples of: 1

2.2 A600 V4.4 OhmsN - Channel 4 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V18 nCEnhancement  
TX15N10


MOSFET N Channel 100V 15A(Tc) 3V @ 250uA 100mO @ 8A,10V TO-252 RoHS
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XDS Availability : 6712
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USD 0.1107

Multiples of: 5

                   
IAUCN04S7N004ATMA1


MOSFET MOSFET_(20V 40V)
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Infineon Availability : 6703
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USD 1.243

Multiples of: 1

518 A40 V550 uOhmsN - Channel 2.6 V- 55 C+ 175 C219 WSMD/SMTTDSON - 8Reel , Cut TapeSi - 20 V , + 20 V169 nCEnhancement  
SI2343CDS-TP


30V 5.8A 43m@4.5V,4A 1.4W 1.2V@250uA SOT-23-3L MOSFETs ROHS
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TECH PUBLIC Availability : 6702
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USD 0.0281

Multiples of: 10

                   
BSC040N08NS5ATMA1


Infineon Technologies MOSFET N-Ch 80V 100A TDSON-8
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Infineon Availability : 6701
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USD 0.8888

Multiples of: 1

100 A80 V5.7 mOhmsN - Channel 2.2 V- 55 C+ 150 C104 WSmd/SmtSO - 8ReelSi1 Channel+/- 20 V43 nCEnhancement Optimos
80N03F


30V 80A 3.8mΩ 2.5V N Channel DFN5x6 MOSFETs ROHS
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HL Availability : 6697
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USD 0.0691

Multiples of: 5

                   
IRF7328TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai Availability : 6690
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USD 0.1009

Multiples of: 5

                   
ZXMN10A07FTA


N-Channel 100 V 700mA (Ta) 625mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated Availability : 6688
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USD 0.1258

Multiples of: 5

800 mA100 V700 mOhmsN - channel 2 V- 55 C+ 150 C806 mWSmd/smtSOT - 23ReelSi1 Channel10 V2.9 nCEnhancement  
HCJ3139K


20V 660mA 560mΩ P Channel SOT-723 MOSFETs ROHS
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HXY MOS Availability : 6673
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USD 0.0192

Multiples of: 20

                   
BUK9Y6R0-60E,115


MOSFET N-channel 60 V 6.0 mo FET
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Nexperia Availability : 6671
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USD 1.2594

Multiples of: 1

100 A60 V4.6 mOhmsN - Channel 1.7 V- 55 C+ 175 C195 WSmd/SmtLFPAK56 - 5ReelSi1 Channel15 V39.4 nCEnhancement  
WSF60100


60V 100A 6mΩ@10V,20A 150W N Channel TO-252-3 MOSFETs ROHS
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Winsok Availability : 6665
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USD 0.502

Multiples of: 1

                   
BSC047N08NS3 G


Infineon Technologies MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
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Infineon Availability : 6665
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USD 1.4923

Multiples of: 1

18 A80 V4.7 mOhmsN - Channel20 V2 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V69 nCEnhancement Optimos
GS61008P-TR


MOSFET 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled
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Gan Systems Availability : 6665
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USD 4.796

Multiples of: 1

90 A100 V9.5 mOhmsN - Channel 1.3 V- 55 C+ 150 C SMD/SMT Reel , Cut TapeGaN1 Channel- 10 V , + 7 V8 nCEnhancement GaNPX
IRFR320TRPBF


N-Channel 400 V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay Availability : 6663
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USD 0.271

Multiples of: 1

3.1 A400 V1.8 OhmsN - Channel 2 V- 55 C+ 150 C42 WSmd/SmtDPAKReelSi1 Channel10 V20 nCEnhancement  
IRF7473TRPBF-VB


100V 6.4A null SOP-8 MOSFETs ROHS
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VBsemi Elec Availability : 6653
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USD 0.3631

Multiples of: 1

                   
SI2333DDS-T1-GE3


P-Channel 12 V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay Availability : 6465
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USD 0.1173

Multiples of: 5

6 A12 V23 mOhmsP - Channel 1 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 (TO - 236)ReelSi1 Channel8 V35 nCEnhancement P - Channel Gen Iii
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