NTR4003NT3G ON Semiconductor

NTR4003NT3G electronic component of ON Semiconductor
NTR4003NT3G ON Semiconductor
NTR4003NT3G MOSFETs
NTR4003NT3G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTR4003NT3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTR4003NT3G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.NTR4003NT3G
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:ON Semiconductor MOSFET NFET 30V .56A 1500M
Datasheet:NTR4003NT3G Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
2995: USD 0.0417 ea
Line Total: USD 124.89 
Availability : 53793
  
Ship by Tue. 23 Jun to Mon. 29 Jun
QtyUnit Price
2995$ 0.0417
5000$ 0.0384
10000$ 0.0382
30000$ 0.0369
50000$ 0.0355
100000$ 0.0353
150000$ 0.0346
250000$ 0.0342
  

Availability53793
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 2995
Multiples : 1
QtyUnit Price
2995$ 0.0417
5000$ 0.0384
10000$ 0.0382
30000$ 0.0369
50000$ 0.0355
100000$ 0.0353
150000$ 0.0346
250000$ 0.0342


Availability53350
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 5000
Multiples : 1000
QtyUnit Price
5000$ 0.055
6000$ 0.0496
10000$ 0.0468
30000$ 0.0444
50000$ 0.0426

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTR4003NT3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTR4003NT3G and other electronic components in the MOSFETs category and beyond.

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NTR4003N, NVR4003N MOSFET Single, N-Channel, Small Signal, SOT-23 30 V, 0.56 A www.onsemi.com Features Low Gate Voltage Threshold (V ) to Facilitate Drive Circuit GS(TH) V R TYP I MAX (BR)DSS DS(on) D Design Low Gate Charge for Fast Switching 1.0 4.0 V 30 V 0.56 A ESD Protected Gate 1.5 2.5 V SOT23 Package Provides Excellent Thermal Performance Minimum Breakdown Voltage Rating of 30 V NChannel NVR Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant 1 Applications Notebooks: Level Shifters 2 Logic Switches Low Side Load Switches MARKING DIAGRAM/ Portable Applications PIN ASSIGNMENT 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) J 3 Drain Parameter Symbol Value Unit 1 DraintoSource Voltage V 30 V DSS 2 TR8 M GatetoSource Voltage V 20 V GS SOT23 Continuous Drain Steady T = 25C I 0.5 A A D Current (Note 1) State CASE 318 T = 85C 0.37 A STYLE 21 1 2 Power Dissipation Steady State P 0.69 W Gate Source D (Note 1) TR8 = Specific Device Code Continuous Drain t < 10 s T = 25C I 0.56 A M = Date Code A D Current (Note 1) = PbFree Package T = 85C 0.40 A (Note: Microdot may be in either location) Power Dissipation t < 5 s P 0.83 W D (Note 1) *Date Code orientation and overbar may vary depending upon manufacturing location. Pulsed Drain Current t = 10 s I 1.7 A p DM Operating Junction and Storage Temperature T , 55 to C J 150 ORDERING INFORMATION Tstg Source Current (Body Diode) I 1.0 A S Device Package Shipping Lead Temperature for Soldering Purposes T 260 C L NTR4003NT1G SOT23 3000 / Tape & Reel (1/8 from case for 10 s) (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the NTR4003NT3G SOT23 10,000 / Tape & device. If any of these limits are exceeded, device functionality should not be (PbFree) Reel assumed, damage may occur and reliability may be affected. NVR4003NT3G SOT23 10,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: June, 2019 Rev. 5 NTR4003N/DNTR4003N, NVR4003N THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 1) R 180 C/W JA JunctiontoAmbient t < 10 s (Note 1) R 150 JA JunctiontoAmbient Steady State (Note 2) R 300 JA 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 2. Surfacemounted on FR4 board using the minimum recommended pad size. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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