About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7898DP-T1-E3


MOSFET 150V Vds 20V Vgs PowerPAK SO-8
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Vishay Availability : 27145
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USD 0.8217

Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel      Trenchfet/Powerpak
DMPH6250SQ-7


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated Availability : 27086
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USD 0.1507

Multiples of: 1

2.4 A60 V155 mOhmsP - Channel 3 V- 55 C+ 175 C1.62 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V8.3 nCEnhancementAec - Q101 
SSM6J808R,LF


MOSFETs
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Toshiba Availability : 27055
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USD 0.2059

Multiples of: 1

           Reel , Cut TapeSi    AEC - Q101 
UT8205AG-AG6


20V 6A 19.5mΩ@4.5V,3A 1.5W 700mV@250uA 58pF@10V 2 N-Channel 466pF@10V 5.7nC@10V -55℃~+150℃@(Tj) SOT-23-6 MOSFETs ROHS
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TECH PUBLIC Availability : 26967
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USD 0.0435

Multiples of: 5

                   
IRLML6346TR(UMW)


SOT-23 MOSFETs ROHS
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Youtai Availability : 26830
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USD 0.0289

Multiples of: 10

                   
FDC5614P


SOT23-6 MOSFETs ROHS
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TECH PUBLIC Availability : 26825
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USD 0.1218

Multiples of: 5

                   
BSC050N10NS5ATMA1


100V 5mO@50A,10V N Channel TDSON-8-7 MOSFETs ROHS
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Infineon Availability : 26818
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USD 1.265

Multiples of: 1

           Cut Tape       
TPNTK3139PT1G


20V 850mA 530mO@4.5V,550mA 690mW P Channel SOT-723 MOSFETs ROHS
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TECH PUBLIC Availability : 26802
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USD 0.0193

Multiples of: 20

                   
STP24NF10


Transistor: N-MOSFET; unipolar; 100V; 18A; 85W; TO220-3
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STMicroelectronics Availability : 26772
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USD 0.4244

Multiples of: 1

                   
FDD86250-F085


MOSFET 40V 15A DPAK N-Chnl PowerTrench
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ON Semiconductor Availability : 26675
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USD 1.0633

Multiples of: 2500

15 A40 V14 mOhmsN - Channel 2 V- 55 C+ 175 C62.5 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V15 nCEnhancementAec - Q101Powertrench
FDB035N10A


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor Availability : 26660
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USD 2.486

Multiples of: 1

214 A100 V3 mOhmsN - Channel 4 V  333 WSmd/SmtD2PAKReelSi1 Channel20 V89 nC  Powertrench
SQJ420EP-T1_GE3


MOSFET 40V Vds -/+20V Vgs AEC-Q101 Qualified
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Vishay Availability : 26652
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USD 0.376

Multiples of: 1

30 A40 V8.2 mOhmsN - Channel 1.5 V- 55 C+ 175 C45 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V41 nCEnhancementAec - Q101Powerpak
SIR626DP-T1-RE3


MOSFET 60V Vds 20V Vgs PowerPAK SO-8
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Vishay Availability : 26652
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USD 1.0058

Multiples of: 1

100 A60 V1.4 mOhmsN - Channel 2 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V102 nCEnhancement Trenchfet, Powerpak
DMN65D8LFB-7


Diodes Incorporated MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd
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Diodes Incorporated Availability : 26646
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USD 0.0396

Multiples of: 1

400 mA60 V3 OhmsN - Channel 1.2 V- 55 C+ 150 C430 mWSmd/SmtX1 - DFN1006 - 3Cut TapeSi1 Channel20 V-Enhancement  
SQ4401EY-T1_BE3


MOSFET P-CHANNEL 40V
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Vishay Availability : 26610
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USD 1.5144

Multiples of: 1

           Cut Tape       
DMP2035UFDF-7


MOSFET P Trench 20V 8.1A 1V @ 250uA 29 mΩ @ 6.4A,4.5V U-DFN2020-6 RoHS
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Diodes Incorporated Availability : 26602
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USD 0.121

Multiples of: 1

                   
SI7309DN-T1-E3


MOSFET 60V 8.0A 19.8W 115mohm @ 10V
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Vishay Availability : 26591
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USD 0.4125

Multiples of: 1

   P - Channel  - 65 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet
Hot IRFR5305TRPBF


MOSFET P Trench 55V 31A 4V @ 250uA 65 mΩ @ 16A,10V TO-252-2 (DPAK) RoHS
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Infineon Availability : 6406
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USD 0.1994

Multiples of: 5

31 A55 V65 mOhmsP - Channel 4 V- 55 C+ 175 C110 WSmd/SmtDPAK - 3ReelSi1 Channel20 V42 nCEnhancement  
2N7002KT1G


MOSFET NFET SOT23 60V 380mA 2.5Ohms
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 2813
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USD 0.019

Multiples of: 20

380 mA60 V1.6 OhmsN - Channel 1 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.7 nCEnhancement  
STD20NF06LT4


Transistor: N-MOSFET; unipolar; 60V; 17A; 60W; DPAK
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STMicroelectronics Availability : 1076
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USD 0.4709

Multiples of: 1

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