About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
LND250K1-G


Trans MOSFET N-CH 500V 0.013A 3-Pin SOT-23 T/R
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Microchip Availability : 26566
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USD 0.4807

Multiples of: 1

13 mA500 V1 kOhmsN - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Depletion  
FDD3510H


Fairchild Semiconductor MOSFET 80V Dual N & P-Chan PowerTrench
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ON Semiconductor Availability : 26374
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USD 0.6541

Multiples of: 1

4.3 A80 V80 mOhmsn - channel, p - channel20 V - 55 C+ 150 C3.1 Wsmd/smtDPAK - 3Reelsi2 channel20 V enhancement powertrench
2N7002KW


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ElecSuper Availability : 26325
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USD 0.0129

Multiples of: 20

                   
IPG20N10S4L35ATMA1


Infineon Technologies MOSFET MOSFET
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Infineon Availability : 26318
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USD 0.5522

Multiples of: 1

20 A , 20 A100 v , 100 V29 mOhms , 29 mOhmsN - Channel+/- 16 V1.6 V- 55 C+ 175 C43 WSmd/SmtPG - TDSON - 8 - 4Reel-2 Channel16 V13.4 nCEnhancementAec - Q101 
FDG330P


Transistor: P-MOSFET; unipolar; -12V; -2A; 0.75W; SC70-6
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 26314
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USD 0.4224

Multiples of: 1

            powertrench®      
IRLML2803TR(UMW)


SOT-23 MOSFETs ROHS
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Youtai Availability : 26248
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USD 0.0314

Multiples of: 10

                   
BSD316SNH6327XTSA1


Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363
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Infineon Availability : 26190
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USD 0.0126

Multiples of: 3000

            Optimos 2      
BSS314PEH6327XT


MOSFET OptiMOS -P 3 Small Signal Transistor
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Infineon Availability : 26190
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USD 0.0701

Multiples of: 1

1.5 A30 V107 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel20 V- 2.9 nCEnhancementAec - Q101 
SI2336DS-T1-GE3


MOSFET 30V Vds 8V Vgs SOT-23
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Vishay Availability : 26190
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USD 0.149

Multiples of: 3000

5.2 A30 V42 mOhmsN - Channel 400 mV- 55 C+ 150 C1.8 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V10 nCEnhancement Trenchfet
FDC6321C


Transistor: N/P-MOSFET; unipolar; 25/-25V; 0.68/0.46A; 0.9W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 26190
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USD 0.2151

Multiples of: 3000

                   
STL8DN6LF6AG


MOSFET LGS LV MOSFET
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STMicroelectronics Availability : 26190
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USD 0.5536

Multiples of: 3000

32 A60 V31 mOhmsN - Channel 1 V- 55 C+ 175 C55 WSmd/SmtPowerflat - 8ReelSi2 Channel+/- 20 V27 nCEnhancementAec - Q101Stripfet
STFW3N150


Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF
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STMicroelectronics Availability : 26190
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USD 0.62

Multiples of: 1

            Powermesh      
BSS214N H6327


Infineon Technologies MOSFET N-Ch 20V 1.5A SOT-23-3
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Infineon Availability : 26182
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USD 0.0528

Multiples of: 1

1.5 A20 V106 mOhmsN - Channel 950 mV- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 3Reel-1 Channel+/- 12 V800 pCEnhancementAec - Q101 
NTMFS10N3D2C


MOSFET 100V20V N-Channel PTNG MOSFET
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ON Semiconductor Availability : 26172
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USD 4.2435

Multiples of: 1

151 A100 V2.4 mOhmsN - Channel 2 V- 55 C+ 150 C138 WSmd/SmtPOWER - 56 - 8Cut TapeSi1 Channel20 V84 nCEnhancement  
RRQ030P03TR


P-Channel 30 V 3A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95)
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ROHM Availability : 26150
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USD 0.1663

Multiples of: 1

3 A- 30 V55 mOhmsP - Channel20 V - 55 C+ 150 C1.25 WSmd/SmtT SMT - 6ReelSi1 Channel20 V12 nCEnhancement  
UMW8205A


MOSFET 2 N Channel (Dual) 20V 5A 1.2V @ 250uA 27 mΩ @ 5A,4.5V SOT-23-6 RoHS
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Youtai Availability : 26126
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USD 0.0275

Multiples of: 10

                   
FDS8958A_F085


MOSFET SO8DUAL NCH & PCH POWER TRENCH MOSFET
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ON Semiconductor Availability : 26058
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USD 1.0129

Multiples of: 1

7 A , 5 A30 V28 mOhms , 52 mOhmsn and p - channel   + 150 C2 Wsmd/smtSOIC - 8Reelsi2 channel20 V   powertrench
BSS138PS


SOT-23-6 MOSFETs ROHS
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Youtai Availability : 26034
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USD 0.0163

Multiples of: 20

                   
IRLML0040TRPBF


Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
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Infineon Availability : 25418
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USD 0.0759

Multiples of: 1

3.6 A40 V78 mOhmsN - Channel 1 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23ReelSi1 Channel10 V2.6 nCEnhancement  
ZVN4106FTA


N-Channel 60 V 200mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated Availability : 2827
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USD 0.1871

Multiples of: 5

200 mA60 V2.5 OhmsN - channel 1.3 V- 55 C+ 150 C330 mWSmd/smtSOT - 23ReelSi1 Channel10 V Enhancement  
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