About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
Manufacturer
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG2305UX-7


MOSFET P-Ch ENH FET -20V 52mOhm -5.0V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 69878
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USD 0.0306

Multiples of: 10

5 A20 V52 mOhmsP - Channel 900 mV- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V10.2 nCEnhancement  
DMPH6250SQ-7


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated Availability : 27086
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USD 0.1507

Multiples of: 1

2.4 A60 V155 mOhmsP - Channel 3 V- 55 C+ 175 C1.62 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V8.3 nCEnhancementAec - Q101 
SSM6J808R,LF


MOSFETs
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Toshiba Availability : 27055
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USD 0.2059

Multiples of: 1

           Reel , Cut TapeSi    AEC - Q101 
UT8205AG-AG6


20V 6A 19.5mΩ@4.5V,3A 1.5W 700mV@250uA 58pF@10V 2 N-Channel 466pF@10V 5.7nC@10V -55℃~+150℃@(Tj) SOT-23-6 MOSFETs ROHS
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TECH PUBLIC Availability : 26967
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USD 0.0435

Multiples of: 5

                   
IRLML6346TR(UMW)


SOT-23 MOSFETs ROHS
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Youtai Availability : 26830
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USD 0.0289

Multiples of: 10

                   
FDC5614P


SOT23-6 MOSFETs ROHS
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TECH PUBLIC Availability : 26825
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USD 0.1218

Multiples of: 5

                   
BSC050N10NS5ATMA1


100V 5mO@50A,10V N Channel TDSON-8-7 MOSFETs ROHS
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Infineon Availability : 26818
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USD 1.265

Multiples of: 1

           Cut Tape       
TPNTK3139PT1G


20V 850mA 530mO@4.5V,550mA 690mW P Channel SOT-723 MOSFETs ROHS
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TECH PUBLIC Availability : 26802
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USD 0.0193

Multiples of: 20

                   
STD20NF06LT4


Transistor: N-MOSFET; unipolar; 60V; 17A; 60W; DPAK
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STMicroelectronics Availability : 26675
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USD 0.519

Multiples of: 2500

            Supermesh      
SQJ420EP-T1_GE3


MOSFET 40V Vds -/+20V Vgs AEC-Q101 Qualified
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Vishay Availability : 26652
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USD 0.376

Multiples of: 1

30 A40 V8.2 mOhmsN - Channel 1.5 V- 55 C+ 175 C45 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V41 nCEnhancementAec - Q101Powerpak
SIR626DP-T1-RE3


MOSFET 60V Vds 20V Vgs PowerPAK SO-8
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Vishay Availability : 26652
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USD 1.0058

Multiples of: 1

100 A60 V1.4 mOhmsN - Channel 2 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V102 nCEnhancement Trenchfet, Powerpak
SQ4401EY-T1_BE3


MOSFET P-CHANNEL 40V
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Vishay Availability : 26610
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USD 1.5144

Multiples of: 1

           Cut Tape       
DMP2035UFDF-7


MOSFET P Trench 20V 8.1A 1V @ 250uA 29 mΩ @ 6.4A,4.5V U-DFN2020-6 RoHS
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Diodes Incorporated Availability : 26602
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USD 0.121

Multiples of: 1

                   
SI7309DN-T1-E3


MOSFET 60V 8.0A 19.8W 115mohm @ 10V
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Vishay Availability : 26591
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USD 0.4125

Multiples of: 1

   P - Channel  - 65 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet
LND250K1-G


Trans MOSFET N-CH 500V 0.013A 3-Pin SOT-23 T/R
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Microchip Availability : 26566
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USD 0.4807

Multiples of: 1

13 mA500 V1 kOhmsN - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Depletion  
FDD3510H


Fairchild Semiconductor MOSFET 80V Dual N & P-Chan PowerTrench
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ON Semiconductor Availability : 26374
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USD 0.6541

Multiples of: 1

4.3 A80 V80 mOhmsn - channel, p - channel20 V - 55 C+ 150 C3.1 Wsmd/smtDPAK - 3Reelsi2 channel20 V enhancement powertrench
2N7002KW


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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ElecSuper Availability : 26325
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USD 0.0129

Multiples of: 20

                   
ZXMN3A03E6TA


N-Channel 30 V 3.7A (Ta) 1.1W (Ta) Surface Mount SOT-23-6
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Diodes Incorporated Availability : 22313
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USD 0.3025

Multiples of: 1

4.6 A30 V65 mOhmsN - Channel  - 55 C+ 150 C1.1 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel20 V Enhancement  
IRLZ44NPBF


MOSFET N Trench 55V 47A 2V @ 250uA 22 mΩ @ 25A,10V TO-220 (TO-220-3) RoHS
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Infineon Availability : 22280
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USD 0.5126

Multiples of: 1

41 A55 V35 mOhmsN - Channel    83 WThrough HoleTO - 220 - 3TubeSi1 Channel16 V32 nC   
IRFL014NTRPBF


MOSFET N Trench 55V 1.9A 4V @ 250uA 160 mΩ @ 1.9A,10V SOT-223 RoHS
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Infineon Availability : 12177
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USD 0.1991

Multiples of: 1

   N Channel      SOT - 223Reel       
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