About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HP8K22TB


MOSFET 30V Nch+Nch Si MOSFET
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ROHM Availability : 29318
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USD 0.5401

Multiples of: 1

27 A , 57 A30 V6.7 mOhms , 3.6 mOhmsN - Channel 1.3 V- 55 C+ 150 C3 WSmd/SmtHSOP - 8Cut TapeSi2 Channel20 V10 nC , 16.8 nCEnhancement  
SI2300


MOSFET N Trench 20V 6A 1.2V @ 250uA 60 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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Hottech Availability : 29274
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USD 0.0132

Multiples of: 5

                   
CMPDM7003 TR


MOSFET N-Ch Enh Mode FET 50Vds 50Vdg 350pD
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Central Semiconductor Availability : 29249
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USD 0.0965

Multiples of: 3000

   N - Channel     Smd/SmtSOT - 23ReelSi1 Channel     
TPM2009EP3


20V 660mA 520mΩ@4.5V,1A 100mW 1.1V@250uA 9pF@16V P Channel 113pF@16V +150℃@(Tj) DFN1006-3L MOSFETs ROHS
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TECH PUBLIC Availability : 29113
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USD 0.0208

Multiples of: 20

                   
SI2302-MS


SOT-23 MOSFETs ROHS
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MSKSEMI Availability : 29100
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USD 0.0072

Multiples of: 50

                   
MMFTN6001


MOSFET MOSFET, SOT-23, 60V, 0.44A, N, 0.53W
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Diotec Availability : 29100
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USD 0.0202

Multiples of: 20

                   
2N7002E-7-F


60V 250mA 3O@10V,250mA 370mW N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated Availability : 29100
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USD 0.0249

Multiples of: 3000

300 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V223 pCEnhancement  
LGE2300


Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
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Luguang Availability : 29100
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USD 0.0406

Multiples of: 20

                   
DMN3190LDW-13


Diodes Incorporated MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
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Diodes Incorporated Availability : 29100
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USD 0.0507

Multiples of: 10000

1 A30 V190 mOhmsN - Channel 2.8 V- 55 C+ 150 C320 mWSmd/SmtSOT363Reel-2 Channel+/- 20 V2 nCEnhancement  
DMN1260UFA-7B


Diodes Incorporated MOSFET 12V N-Ch Enh FET 8 VGS 60pF 0.92nC
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Diodes Incorporated Availability : 29100
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USD 0.0547

Multiples of: 10000

200 mA12 V366 mOhmsN - Channel 1 V- 55 C+ 150 C0.36 WSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.96 nCEnhancement  
DMN2300UFB-7B


MOSFET MOSFET BVDSS
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Diodes Incorporated Availability : 29100
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USD 0.0988

Multiples of: 10000

1.78 A20 V360 mOhmsN - Channel     Smd/SmtDFN - 1006 - 3Reel       
FDC6301N


Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
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ON Semiconductor Availability : 29100
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USD 0.1188

Multiples of: 3000

   Dual N Channel               
Si2303CDS-T1-E3


MOSFET 30V 2.7A 2.3W 190mohm @ 10V
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Vishay Availability : 29100
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USD 0.1537

Multiples of: 3000

2.7 A30 V190 mOhmsP - Channel 1 V- 55 C+ 150 C2.3 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 10 V4 nCEnhancement Trenchfet
SISS27DN-T1-GE3


Vishay Semiconductors MOSFET -30V 5.6mOhm10V -50A P-Ch G-III
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Vishay Availability : 29100
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USD 0.292

Multiples of: 3000

- 50 A- 30 V5.6 mOhmsP - Channel - 1 v to - 2.2 V- 55 C+ 150 C57 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel20 V45 nCEnhancement Trenchfet Power Mosfet
SI7157DP-T1-GE3


MOSFET -20V .0016ohm@-10V -60A P-Ch
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Vishay Availability : 29100
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USD 0.6254

Multiples of: 3000

- 60 A- 20 V1.25 mOhmsP - Channel12 V- 500 mV to - 1.4 V- 55 C+ 150 C104 WSmd/SmtSO - 8Reel   202.5 nC  Trenchfet
TPN2R703NL,L1Q


N-Channel 30 V 45A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
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Toshiba Availability : 29100
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USD 0.7635

Multiples of: 5000

45 A30 V3.3 mOhmsn - channel 1.3 v to 2.3 V- 55 C+ 150 C42 Wsmd/smtTSON - 8Reelsi1 channel20 V21 nCenhancement  
IPD200N15N3GATMA1


Infineon Technologies MOSFET
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Infineon Availability : 29100
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USD 0.9058

Multiples of: 2500

50 A150 V20 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V23 nCEnhancement Optimos
STL120N8F7


MOSFET N-channel 80 V, 3.7 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
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STMicroelectronics Availability : 29100
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USD 1.0418

Multiples of: 3000

120 A80 V4.4 mOhmsN - Channel 4 V- 55 C+ 175 C140 WSmd/SmtPowerflat - 8 Si1 Channel+/- 20 V60 nCEnhancement Stripfet
FDMS8320L


MOSFET 40V/20V NCh PowerTrench MOSFET
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ON Semiconductor Availability : 29100
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USD 1.2092

Multiples of: 3000

36 A40 V1.1 mOhmsN - Channel  - 55 C+ 150 C104 WSmd/SmtPOWER 56ReelSi1 Channel20 V   Powertrench
STL18N65M5


MOSFET N-CH 650V 0.215Ohm 15A MDmesh V
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STMicroelectronics Availability : 29100
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USD 1.4152

Multiples of: 3000

15 A650 V240 mOhmsN - Channel25 V4 V- 55 C+ 150 C57 WSmd/SmtPowerflat - 8 5X6ReelSi2 Channel25 V31 nC  Mdmesh
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