About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vgs Th - Gate-source Threshold Voltage
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML2502TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC Availability : 25889
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USD 0.0396

Multiples of: 10

                   
ECH8660-TL-H


Mosfet Array N and P-Channel 30V 4.5A 1.5W Surface Mount 8-ECH
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ON Semiconductor Availability : 25883
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USD 0.2556

Multiples of: 1

4.5 A30 V110 mOhms , 82 mOhmsN - Channel, P - Channel20 V - 55 C+ 150 C1.3 WSmd/SmtECH - 8ReelSi2 Channel20 V4.4 nC , 10 nC   
2N7002KDW_R1_00001


MOSFET /K27/TR/7"/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI17/PJ///
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Panjit Availability : 25842
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USD 0.0403

Multiples of: 1

           Cut Tape       
60N03


30V 60A 6.5m 2.5V 1PCSNChannel TO-252 MOSFETs ROHS
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HL Availability : 25808
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USD 0.0471

Multiples of: 5

                   
BSS215P H6327


Infineon Technologies MOSFET P-Ch -20V -1.5A SOT-23-3
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Infineon Availability : 25747
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USD 0.0914

Multiples of: 1

- 1.5 A- 20 V105 mOhmsP - Channel - 900 mV- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 3Reel-1 Channel+/- 12 V- 3.6 nCEnhancementAec - Q101 
BSS123


100V 170mA 6Ω@10V 0.35W N Channel SOT-23 MOSFETs ROHS
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HXY MOS Availability : 25705
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USD 0.0106

Multiples of: 20

                   
AO3480


SOT-23 MOSFETs ROHS
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TECH PUBLIC Availability : 25675
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USD 0.0243

Multiples of: 10

                   
NTD4904NT4G


MOSFET NFET IPAK 30V 79A 3.7 mOhm
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ON Semiconductor Availability : 25641
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USD 0.4351

Multiples of: 1

17.8 A30 V5.5 mOhmsn - channel   + 175 C2.6 Wsmd/smtDPAKReelsi1 channel     
RV3C002UNT2CL


MOSFET 20V Vdss 2ohm Rds on Id +/-150mA N-Ch
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ROHM Availability : 25622
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USD 0.1133

Multiples of: 1

150 mA20 V5.4 OhmsN - Channel 300 mV- 55 C+ 150 C100 mWSmd/SmtVML0604 - 3ReelSi1 Channel+/- 10 V Enhancement  
5N10-MS


100V 5A N Channel SOT-23 MOSFETs ROHS
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MSKSEMI Availability : 25601
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USD 0.0284

Multiples of: 10

                   
DMPH6050SPD-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated Availability : 25585
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USD 0.4565

Multiples of: 1

         Smd/SmtPowerdi5060 - C - 8Cut TapeSi      
SI7848BDP-T1-E3


MOSFET 40V Vds 20V Vgs PowerPAK SO-8
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Vishay Availability : 25543
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USD 1.441

Multiples of: 1

         Smd/SmtPOWERPAK - SO - 8Cut TapeSi     Trenchfet
DMP1045UQ-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated Availability : 25504
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USD 0.0935

Multiples of: 1

5.2 A12 V26 mOhmsP - Channel 300 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 4.5 V15.8 nCEnhancementAec - Q101 
SP000870646


MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon Availability : 25494
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USD 0.0517

Multiples of: 1

190 mA100 V6 OhmsN - Channel 1.4 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT - 23 - 3ReelSi1 Channel20 V600 pCEnhancementAec - Q101 
DMP3160L-7


P-Channel 30 V 2.7A (Ta) 1.08W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated Availability : 25404
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USD 0.0389

Multiples of: 10

2.7 A30 V122 mOhmsP - Channel 1.3 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V8.2 nCEnhancement  
IRFB4115PBF


Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
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Infineon Availability : 25353
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USD 0.4439

Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
DMG6602SVT-7


MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K
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Diodes Incorporated Availability : 24545
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USD 0.0607

Multiples of: 5

3.4 A , 2.8 A30 V100 mOhms , 140 mOhmsN - Channel, P - Channel  - 55 C+ 150 C840 mWSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel20 V9 nCEnhancement  
PSMN4R2-30MLDX


MOSFET 30V N-Channel 2.4mOhm
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Nexperia Availability : 15490
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USD 0.4413

Multiples of: 1

70 A30 V5.7 mOhmsN - Channel2.2 V2.2 V  65 WSmd/SmtLFPAK33 - 4ReelSi1 Channel2.2 V29.3 nCEnhancement  
NVMFS5113PLT1G


MOSFET SINGLE P-CHANNEL S08FL 60V 69A 1
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ON Semiconductor Availability : 2910
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USD 1.4524

Multiples of: 1500

64 A60 V14 mOhmsP - Channel 1.5 V- 55 C+ 150 C150 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel- 10 V83 nCEnhancementAec - Q101 
FQB19N20LTM


Transistor: N-MOSFET; unipolar; 200V; 13.3A; 140W; D2PAK
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ON Semiconductor Availability : 776
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USD 0.8341

Multiples of: 800

   N Channel               
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