X-On Electronics has gained recognition as a prominent supplier of SI1441EDH-T1-BE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1441EDH-T1-BE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1441EDH-T1-BE3 Vishay

SI1441EDH-T1-BE3 electronic component of Vishay
SI1441EDH-T1-BE3 Vishay
SI1441EDH-T1-BE3 MOSFETs
SI1441EDH-T1-BE3  Semiconductors

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See Product Specifications
Part No. SI1441EDH-T1-BE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 20V 4A (Ta), 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6
Datasheet: SI1441EDH-T1-BE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3587 ea
Line Total: USD 0.36 
Availability - 24698
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
24698
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 0.3587
10 : USD 0.3075
100 : USD 0.2553
500 : USD 0.2233
1000 : USD 0.1969
3000 : USD 0.1672
6000 : USD 0.165
9000 : USD 0.165

   
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Technology
Series
Part Status
Fet Type
Drain To Source Voltage Vdss
Current - Continuous Drain Id 25 C
Rds On Max Id Vgs
Vgsth Max Id
Gate Charge Qg Max Vgs
Vgs Max
Fet Feature
Power Dissipation Max
Operating Temperature
Mounting Type
Supplier Device Package
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We are delighted to provide the SI1441EDH-T1-BE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1441EDH-T1-BE3 and other electronic components in the MOSFETs category and beyond.

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Si1441EDH www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES SC-70 (6 leads) SOT-363 Single TrenchFET power MOSFET S 4 Typical ESD performance 1500 V D 5 100 % R tested g D 6 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 G S APPLICATIONS 2 D Load switch for portable devices 1 D - Cellular phone Top View - DSC Marking code: BQ - Portable game console G - MP3 R PRODUCT SUMMARY - GPS V (V) -20 DS R max. ( ) at V = -4.5 V 0.041 DS(on) GS R max. ( ) at V = -2.5 V 0.054 DS(on) GS D R max. ( ) at V = -1.8 V 0.100 P-Channel MOSFET DS(on) GS Q typ. (nC) 12.5 g a I (A) -4 D Configuration Single ORDERING INFORMATION Package SC-70 Lead (Pb)-free and halogen-free Si1441EDH-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -20 DS V Gate-source voltage V 10 GS a T = 25 C -4 C T = 70 C -4 C Continuous drain current (T = 150 C) I J D a, b, c T = 25 C -4 A a, b, c T = 70 C -4 A A Pulsed drain current (t = 300 s) I -25 DM T = 25 C -2.3 C Continuous source-drain diode current I S b, c T = 25 C -1.3 A T = 25 C 2.8 C T = 70 C 1.8 C Maximum power dissipation P W D b, c T = 25 C 1.6 A b, c T = 70 C 1 A Operating junction and storage temperature range T , T -55 to +150 J stg C Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b, d Maximum junction-to-ambient t 5 s R 60 80 thJA C/W Maximum junction-to-foot (drain) Steady state R 34 45 thJF Notes a. Package limited b. Surface mounted on 1 x 1 FR4 board c. t = 5 s d. Maximum under steady state conditions is 125 C/W S10-1827-Rev. A, 09-Aug-10 Document Number: 66823 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si1441EDH www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -20 - - V DS GS D V temperature coefficient V /T --11 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -2.6 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = -250 A -0.4 - -1 V GS(th) DS GS D V = 0 V, V = 10 V - - 8 DS GS Gate-source leakage I GSS V = 0 V, V = 4.5 V - - 1 DS GS A V = -20 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I DSS V = -20 V, V = 0 V, T = 55 C - - -10 DS GS J a On-state drain current I V -5 V, V = -10 V -15 - - A D(on) DS GS V = -4.5 V, I = -5 A - 0.034 0.041 GS D a Drain-source on-state resistance R V = -2.5 V, I = -4.4 A - 0.045 0.054 DS(on) GS D V = -1.8 V, I = -1 A - 0.067 0.100 GS D a Forward transconductance g V = -10 V, I = -5 A - 16 - S fs DS D b Dynamic V = -10 V, V = -8 V, I = -5 A - 22 33 DS GS D Total gate charge Q g - 12.5 19 nC Gate-source charge Q V = -10 V, V = -4.5 V, I = -5 A -1.8 - gs DS GS D Gate-drain charge Q -3.3 - gd Gate resistance R f = 1 MHz 80 430 860 g Turn-on delay time t - 150 225 d(on) Rise time t - 300 450 r V = -10 V, R = 1.4 DD L I -4 A, V = -4.5 V, R = 1 Turn-off delay time t -D GEN g16202430 d(off) Fall time t - 560 840 f ns Turn-on delay time t - 50 100 d(on) Rise time t - 90 180 r V = -10 V, R = 1.4 DD L I -4 A, V = -10 V, R = 1 Turn-off delay time t -D GEN g25003750 d(off) Fall time t - 600 900 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - -2.3 S C A Pulse diode forward current I -- -25 SM Body diode voltage V I = -4 A, V = 0 V - -0.85 -1.2 V SD S GS Body diode reverse recovery time t -18 36 ns rr Body diode reverse recovery charge Q - 8 16 nC rr I = -4 A, di/dt = 100 A/s, F T = 25 C Reverse recovery fall time t J -18- a ns Reverse recovery rise time t -10- b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S10-1827-Rev. A, 09-Aug-10 Document Number: 66823 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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