Product Information

UMW1N60G

UMW1N60G electronic component of Youtai

Datasheet
MOSFET N Trench 600V 1A (Tc) 4V @ 250uA 11 Ω @ 500mA,10V SOT-223 RoHS

Manufacturer: Youtai
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1267 ea
Line Total: USD 0.63

67202 - Global Stock
Ships to you between
Thu. 23 May to Tue. 28 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
15219 - WHS 1


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 5
Multiples : 5

Stock Image

UMW1N60G
Youtai

5 : USD 0.1092
50 : USD 0.0859
150 : USD 0.0741
500 : USD 0.0653
2500 : USD 0.0564
5000 : USD 0.0529

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The UMW1N60G is a metal-oxide-semiconductor field-effect transistor (MOSFET) manufactured by Youtai. It is a N-channel MOSFET with a trench gate structure, and is rated at 600V of peak blocking voltage and 1A of continuous drain current. It has a low threshold voltage of 4V with an on resistance of 11O at 500mA. The package of this MOSFET is a SOT-223 footprint and it is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
UMW(Youtai Semiconductor Co., Ltd.)
Youtai Semiconductor Co., Ltd.

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