About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS306NH6327XTSA1


Infineon Technologies MOSFET N-Ch 30V 2.3A SOT-23-3
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Infineon Availability : 229890
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USD 0.065

Multiples of: 3000

2.3 A30 V57 mOhmsN - Channel 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel20 V1.5 nCEnhancementAec - Q101 
SQ2337ES-T1_BE3


MOSFET P-CHANNEL 80V D-S
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Vishay Availability : 183330
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USD 0.2387

Multiples of: 1

2.2 A80 V290 mOhmsP - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V11.5 nCEnhancement TrenchFET
FDZ193P


MOSFET MFET-20V P-CH 1.7V PowerTrench WL-CSP
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ON Semiconductor Availability : 183328
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USD 0.267

Multiples of: 1

3 A20 V66 mOhmsp - channel  - 55 C+ 150 C1.5 Wsmd/smtWL - CSPReelsi1 channel12 V enhancement powertrench
MCH6661-TL-W


ON Semiconductor MOSFET NCH 1.7A 30V SOT-363
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ON Semiconductor Availability : 180420
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USD 0.1924

Multiples of: 59

1.8 A30 V188 mOhmsn - channel20 V2.6 V- 55 C+ 150 C0.8 Wsmd/smtSOT - 363 - 6Reelsi2 channel20 V2 nC   
BVSS138LT1G


ON Semiconductor MOSFET NFET 50V 200MA 3.5O
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ON Semiconductor Availability : 177510
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USD 0.0508

Multiples of: 3000

200 mA50 V5.6 Ohmsn - channel20 V1.5 V- 55 C+ 150 C225 mWsmd/smtSOT - 23 - 3Reel       
BSS83P H6327


Infineon Technologies MOSFET P-Ch SOT-23-3
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Infineon Availability : 175705
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USD 0.0474

Multiples of: 5

330 mA60 V3 OhmsP - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3-Si1 Channel- 4.5 V2.38 nCEnhancementAec - Q101 
STB6N80K5


STMicroelectronics MOSFET
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STMicroelectronics Availability : 173630
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USD 1.072

Multiples of: 1000

4.5 A800 V1.6 OhmsN - Channel+/- 30 V4 V- 55 C+ 150 C110 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel30 V7.5 nCEnhancement Mdmesh
2302


20V 3A 45m 1.25W SOT-23 MOSFETs ROHS
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OSEN Availability : 169732
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USD 0.0069

Multiples of: 50

                   
BSS138-7-F


Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R
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Diodes Incorporated Availability : 167286
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USD 0.0142

Multiples of: 20

200 mA50 V3.5 OhmsN - Channel 500 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
CJ3404


MOSFET N Trench 30V 5.8A 3V @ 250uA 30 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology Availability : 164402
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USD 0.0285

Multiples of: 10

                   
PMV164ENEAR


MOSFET PMV164ENEASOT23TO-236AB
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Nexperia Availability : 160750
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USD 0.055

Multiples of: 1

1.6 A60 V473 mOhmsN - Channel 1.3 V- 55 C+ 175 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V2.5 nCEnhancementAec - Q101 
AP2302B


MOSFET N Trench 20V 2.8A 1.2V @ 50uA 55 mΩ @ 2.8A,4.5V SOT-23 RoHS
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Quan Li Availability : 160680
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USD 0.0138

Multiples of: 50

                   
JSM2301S


20V 2.3A 90mΩ@4.5V,2.8A 350mW 1V@250uA 55pF@10V P Channel 405pF@10V 5.4nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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JSMSEMI Availability : 159912
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USD 0.0057

Multiples of: 50

                   
2N7002


Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.35W; SOT23
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Diotec Availability : 159305
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USD 0.021

Multiples of: 1

                   
SI3552DV-T1-E3


Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP
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Vishay Availability : 158289
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USD 0.286

Multiples of: 1

   N And P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel      Trenchfet
SI2308BDS-T1-GE3


MOSFET 60V Vds 20V Vgs SOT-23
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Vishay Availability : 64020
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USD 0.1562

Multiples of: 3000

2.3 A60 V156 mOhmsN - Channel 1 V- 55 C+ 150 C1.66 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6.8 nCEnhancement Trenchfet
BSH105,215


N-Channel 20 V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB
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Nexperia Availability : 5820
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USD 0.1017

Multiples of: 3000

   N Channel      SOT - 23Reel       
NTA4151PT1G


MOSFET -20V -760mA PChannel
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ON Semiconductor Availability : 4704
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USD 0.0226

Multiples of: 10

   P - Channel  - 55 C+ 150 C Smd/SmtSC - 75Reel       
BST82,215


100V 190mA 10O@150mA,5V 830mW null SOT-23 MOSFETs ROHS
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Nexperia Availability : 1585
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USD 0.1108

Multiples of: 5

190 mA100 V10 OhmsN - Channel 1 V- 65 C+ 150 C830 mWSmd/SmtSOT - 23ReelSi1 Channel5 V Enhancement  
PMZ1000UN,315


MOSFET MOSFET N-CH
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Nexperia Availability : 0
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USD 0.0517

Multiples of: 1

480 mA30 V1 Ohmsn - channel     smd/smtSOT - 883 - 3Reelsi1 channel     
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