About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML6402


MOSFET P Trench 20V 3.7A 950mV @ 250uA 65 mΩ @ 3.7A,4.5V SOT-23 RoHS
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Youtai Availability : 142931
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USD 0.0248

Multiples of: 10

                   
BSD235CH6327XT


MOSFET OptiMOS 2,-P 2 Small Signal Transistor
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Infineon Availability : 142177
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USD 0.0715

Multiples of: 1

950 mA , 530 mA20 V266 mOhms , 745 mOhmsN And P - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363ReelSi2 Channel12 V340 pC , - 400 pCEnhancementAec - Q101 
SI2301CDS-T1-GE3


MOSFET -20V Vds 8V Vgs SOT-23
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Vishay Availability : 141969
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USD 0.0374

Multiples of: 10

3.1 A20 V112 mOhmsP - Channel 400 mV- 55 C+ 150 C1.6 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V10 nCEnhancement Trenchfet
AO3400


SOT-23-3L MOSFETs ROHS
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FOSAN Availability : 141620
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USD 0.0135

Multiples of: 20

                   
STP141NF55


STMicroelectronics MOSFET POWER MOSFET
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STMicroelectronics Availability : 141620
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USD 1.8281

Multiples of: 1

80 A55 V8 mOhmsn - channel20 V - 55 C+ 175 C300 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancementaec - q101stripfet
AO3407A


MOSFET P Trench 30V 4.1A 3V @ 250uA 52 mΩ @ 4.1A,10V SOT-23 RoHS
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Youtai Availability : 139718
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USD 0.019

Multiples of: 20

                   
BSS308PE H6327


Infineon Technologies MOSFET P-Ch -30V -2A SOT-23-3
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Infineon Availability : 138248
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USD 0.0829

Multiples of: 1

2 A30 V62 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V- 5 nCEnhancementAec - Q101 
STL58N3LLH5


MOSFET Automotive N-channel 30 V, 0.0076 Ohm, 56 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 package
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STMicroelectronics Availability : 136770
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USD 0.6623

Multiples of: 3000

56 A30 V9 mOhmsN - Channel 1 v to 2.5 V- 55 C+ 175 C62.5 WSmd/SmtPowerflat - 8Cut Tape-1 Channel22 v / - 20 V6.5 nCEnhancementAec - Q101Stripfet
IRLML6246TRPBF


MOSFET N Trench 20V 4.1A 1.1V @ 5uA 46 mΩ @ 4.1A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon Availability : 136770
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USD 0.06

Multiples of: 3000

4.1 A20 V46 mOhmsN - Channel    1.3 WSmd/SmtSOT - 23ReelSi1 Channel12 V3.5 nC   
FCPF22N60NT


MOSFET 600V N-Channel SupreMOS
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ON Semiconductor Availability : 134830
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USD 3.1406

Multiples of: 1

22 A600 V140 mOhmsn - channel  - 55 C+ 150 C39 Wthrough holeTO - 220FTubesi1 channel30 V enhancement supremos
BSD235NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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Infineon Availability : 134583
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USD 0.0932

Multiples of: 1

950 mA20 V266 mOhms , 266 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6ReelSi2 Channel12 V320 pC , 320 pCEnhancementAec - Q101 
IPA60R750E6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 5.7A; 27W; TO220FP
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Infineon Availability : 134005
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USD 1.0366

Multiples of: 1

            coolmos e6      
EM6J1T2R


ROHM Semiconductor MOSFET FET Dual Pch -20V -200mA EMT6
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ROHM Availability : 133976
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USD 0.1353

Multiples of: 1

- 200 mA- 20 V1.2 OhmsP - Channel    150 mWSmd/SmtEMT - 6ReelSi2 Channel 1.4 nC   
BSS123K-TP


MOSFET N-Ch Enh FET 100Vds 0.17A 20Vgs 0.35W
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Micro Commercial Components (MCC) Availability : 133860
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USD 0.0312

Multiples of: 3000

           Cut Tape       
DMG1012T-7


MOSFET MOSFET N-CHANNEL SOT-523
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Diodes Incorporated Availability : 133666
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USD 0.0189

Multiples of: 20

630 mA20 V400 mOhmsN - Channel 500 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel4.5 V736.6 pCEnhancement  
RU1J002YNTCL


ROHM Semiconductor MOSFET
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ROHM Availability : 132766
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USD 0.0297

Multiples of: 1

200 mA50 V2.2 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 323FL - 3ReelSi1 Channel4.5 V Enhancement  
SI2307CDS-T1-GE3


P-Channel 30 V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay Availability : 113490
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USD 0.1179

Multiples of: 3000

3.5 A30 V88 mOhmsP - Channel 1 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.1 nCEnhancement Trenchfet
Hot IRLR3705ZTRPBF


Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
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Infineon Availability : 91180
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USD 0.6125

Multiples of: 2000

89 A55 V8 mOhmsN - Channel 3 V + 175 C130 WSmd/SmtDPAKReelSi1 Channel 66 nC   
IRLML2803TRPBF


Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
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Infineon Availability : 72750
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USD 0.0563

Multiples of: 3000

            Hexfet®      
BUK9Y58-75B,115


MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET
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Nexperia Availability : 0
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USD 0.253

Multiples of: 1

20.73 A75 V53 mOhmsN - Channel 1.25 V- 55 C+ 175 C60.4 WSmd/SmtLFPAK56 - 4Cut TapeSi1 Channel10 V10.7 nCEnhancement  
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