About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
Manufacturer
Global Stock ⓘ (▲▼)Price(USD

(Ex. GST)(▲▼)
Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NTHL020N090SC1


SiC MOSFETs 20MOHM 900V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 493
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USD 22.121

Multiples of: 1

Through Hole N - Channel1 Channel900 V118 A28 mOhms- 8 V , + 22 V4.3 V196 nC- 55 C+ 175 C503 WEnhancement EliteSiC
IMCQ120R034M2HXTMA1


SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 487
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USD 6.457

Multiples of: 1

SMD/SMT N - Channel1 Channel89 mOhms64 A89 mOhms- 10 V , + 25 C5.1 V48.7 nC- 55 C+ 175 C326 WEnhancement CoolSiC
IMSQ120R040M2HHXUMA1


SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 486
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USD 11.627

Multiples of: 1

    1.2 kV           
IMBG65R033M2HXTMA1


SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 485
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USD 5.665

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V58 A41 mOhms- 7 V , + 23 V5.6 V34 nC- 55 C+ 175 C227 WEnhancement CoolSiC
IMCQ120R026M2HXTMA1


SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 482
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USD 8.36

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV82 A67 mOhms- 10 V , + 25 V5.1 V63.4 nC- 55 C+ 175 C405 WEnhancement CoolSiC
IMW120R030M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 478
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USD 9.229

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV56 A40 mOhms- 7 V , + 23 V5.7 V63 nC- 55 C+ 150 C227 WEnhancement CoolSiC
IMBG65R083M1HXTMA1


SiC MOSFETs Y
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Infineon Availability : 471
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USD 4.3731

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V28 A111 mOhms- 5 V , + 23 V5.7 V44 nC- 55 C+ 175 C126 WEnhancement CoolSiC
IMBG120R012M2HXTMA1


SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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Infineon Availability : 471
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USD 16.038

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV144 A12.2 mOhms- 7 V , + 20 V5.1 V124 nC- 55 C+ 175 C600 WEnhancement  
G3R160MT12J-TR


SiC MOSFETs 1200V 160mohm TO-263-7 G3R SiC MOSFET
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GeneSiC Semiconductor Availability : 467
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USD 5.379

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV19 A180 mOhms- 10 V , + 22 V2.7 V23 nC- 55 C+ 175 C110 WEnhancement  
IMWH170R650M1XKSA1


SiC MOSFETs Y
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Infineon Availability : 462
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USD 3.102

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV7.5 A580 mOhms- 10 V , + 20 V5.7 V8.1 nC- 55 C+ 175 C88 WEnhancement CoolSiC
IMBG65R060M2HXTMA1


SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
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Infineon Availability : 461
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USD 3.63

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V34.9 A73 mOhms- 7 V , + 23 V5.6 V18 nC- 55 C+ 175 C148 WEnhancement CoolSiC
C3M0021120J2-TR


SiC MOSFETs SiC, MOSFET, 21mohm, 1200V, TO-263-7 XL T&R, Industrial
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Wolfspeed Availability : 459
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USD 21.791

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV248 A35 mOhms- 8 V , + 19 V3.8 V169 nC- 40 C+ 175 C500 WEnhancement  
IMBG65R020M2HXTMA1


SiC MOSFETs Y
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Infineon Availability : 454
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USD 11.5493

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V91 A24 mOhms- 7 V , + 23 V5.6 V57 nC- 55 C+ 175 C326 WEnhancement  
IMBG65R015M2HXTMA1


SiC MOSFETs Y
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Infineon Availability : 454
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USD 15.8528

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V115 A18 mOhms- 7 V , + 23 V5.6 V79 nC- 55 C+ 175 C416 WEnhancement CoolSiC
NTBG070N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mohm, 1200 V, M3S, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 451
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USD 4.18

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV37 A91 mOhms- 10 V , + 22 V4.4 V49 nC- 55 C+ 175 C252 WEnhancement EliteSiC
SCT3080KW7TL


SiC MOSFETs TO263 1.2KV 30A N-CH SIC
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ROHM Availability : 450
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USD 12.6175

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV30 A104 mOhms- 4 V , + 22 V5.6 V60 nC-+ 175 C159 WEnhancement  
SCT027W65G3-4AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
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STMicroelectronics Availability : 448
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USD 10.34

Multiples of: 1

Through Hole N - Channel1 Channel650 V60 A29 mOhms- 18 V , + 18 V4.2 V51 nC- 55 C+ 200 C313 WEnhancement  
AIMBG75R027M1HXTMA1


SiC MOSFETs Y
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Infineon Availability : 447
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USD 9.607

Multiples of: 1

SMD/SMT N - Channel1 Channel750 V64 A25 mOhms- 5 V , + 23 V5.6 V49 nC- 55 C+ 175 C273 WEnhancement CoolSiC
SCT3080KLHRC11


SiC MOSFETs 1200V 31A 165W SIC 80mOhm TO-247N
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ROHM Availability : 323
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USD 18

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV31 A80 mOhms- 4 V , + 22 V2.7 V60 nC- 55 C+ 175 C165 WEnhancementAEC - Q101 
G3R40MT12D


SiC MOSFETs 1200V 40mohm TO-247-3 G3R SiC MOSFET
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GeneSiC Semiconductor Availability : 206
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USD 14.322

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV63 A40 mOhms- 5 V , + 15 V2.7 V88 nC- 55 C+ 175 C297 WEnhancement  
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