About SiC MOSFETs

SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
Hot C3M0040120K


SiC MOSFETs SiC, MOSFET, 40mohm, 1200V, TO-247-4, Industrial
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Wolfspeed Availability : 617
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USD 8.3608

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV66 A40 mOhms- 4 V , + 15 V3.6 V99 nC- 40 C+ 175 C326 WEnhancement  
G3R20MT12N


SiC MOSFETs 1200V 20mohm SOT-227 G3R SiC MOSFET
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GeneSiC Semiconductor Availability : 321
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USD 51.1911

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Screw Mount N - Channel1 Channel1.2 kV93 A20 mOhms- 5 V , + 15 V2.7 V180 nC- 55 C+ 175 C338 WEnhancement  
GC3M0075120D


TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SUPSiC Availability : 307
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USD 4.1559

Multiples of: 1

                
MSC040SMA120B


SiC MOSFETs MOSFET SIC 1200 V 40 mOhm TO-247
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Microchip Availability : 298
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USD 21.4148

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV62 A50 mOhms- 10 V , + 25 V1.8 V140 nC- 55 C+ 175 C311 WEnhancement  
AIMW120R080M1XKSA1


SiC MOSFETs Y
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Infineon Availability : 296
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USD 9.7133

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV33 A80 mOhms- 7 V , + 20 V5.7 V28 nC- 55 C+ 175 C150 mWEnhancement CoolSiC
SCT20N120


SiC MOSFETs 1200V silicon carbide MOSFET
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STMicroelectronics Availability : 294
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USD 8.7159

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV20 A239 mOhms- 20 V , + 20 V3.5 V45 nC- 55 C+ 200 C175 WEnhancement HiP247
MSC035SMA070B4


SiC MOSFETs MOSFET SIC 700 V 35 mOhm TO-247-4
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Microchip Availability : 292
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USD 9.79

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Through Hole N - Channel1 Channel700 V77 A44 mOhms- 10 V , + 23 V1.9 V99 nC- 55 C+ 175 C283 WEnhancement  
SCT3080ARC14


SiC MOSFETs 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
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ROHM Availability : 290
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USD 13.8562

Multiples of: 1

Through Hole N - Channel1 Channel650 V30 A80 mOhms- 4 V , + 22 V5.6 V48 nC- 55 C+ 175 C134 WEnhancement  
IMW65R039M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 281
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USD 5.28

Multiples of: 1

Through Hole N - Channel1 Channel650 V46 A50 mOhms- 5 V , + 23 V5.7 V41 nC- 55 C+ 175 C176 WEnhancement  
C2M0280120D


SiC MOSFETs SIC MOSFET 1200V RDS ON 280 mOhm
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Wolfspeed Availability : 279
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USD 6.3

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Through Hole N - Channel1 Channel1.2 kV10 A280 mOhms- 10 V , + 25 V2.8 V5.6 nC- 55 C+ 150 C62.5 WEnhancement Z - FET
NVH4L040N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, TO247-4L SiC MOSFET 1200 V 40 mohm M3S Series in TO247-4LD package
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ON Semiconductor Availability : 275
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USD 19.2567

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV44 A40.8 mOhms- 8 V , + 22 V3.22 V75.2 nC- 55 C+ 175 C235 WEnhancement EliteSiC
IMW65R083M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 272
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USD 4.347

Multiples of: 1

Through Hole N - Channel1 Channel650 V24 A111 mOhms- 5 V , + 23 V5.7 V19 nC- 55 C+ 175 C104 WEnhancement  
IMZ120R350M1HXKSA1


N-Channel 1200 V 4.7A (Tc) 60W (Tc) Through Hole PG-TO247-4-1
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Infineon Availability : 264
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USD 3.7562

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV4.7 A350 mOhms- 7 V , + 23 V5.7 V5.3 nC- 55 C+ 150 C60 WEnhancement CoolSiC
NTH4L040N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 259
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USD 6.8888

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV51 A52 mOhms- 10 V , + 22 V4.4 V70 nC- 55 C+ 175 C329 WEnhancement EliteSiC
MSC025SMA120B4


SiC MOSFETs MOSFET SIC 1200 V 25 mOhm TO-247-4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 256
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USD 35.398

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV103 A31 mOhms- 10 V , + 23 V1.8 V232 nC- 55 C+ 175 C500 WEnhancement  
IMW65R050M2HXKSA1


SiC MOSFETs Y
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Infineon Availability : 250
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USD 5.513

Multiples of: 1

Through Hole N - Channel1 Channel650 V38 A62 mOhms- 7 V , + 23 V5.6 V22 nC- 55 C+ 175 C153 WEnhancement CoolSiC
C3M0120100K


SiC MOSFETs 1000V 120mOhm G3 SiC MOSFET TO-247-4
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Wolfspeed Availability : 247
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USD 10.8948

Multiples of: 1

Through Hole N - Channel1 Channel1 kV22 A120 mOhms- 4 v , 15 V1.8 V21.5 nC- 55 C+ 150 C83 WEnhancement  
IMZA65R027M1HXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 244
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USD 9.5299

Multiples of: 1

Through Hole N - Channel1 Channel650 V59 A34 mOhms- 5 V , + 23 V5.7 V63 nC- 55 C+ 150 C189 WEnhancement CoolSiC
MSC035SMA170B


SiC MOSFETs MOSFET SIC 1700 V 35 mOhm TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 233
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USD 34.749

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV68 A45 mOhms- 10 V , + 23 V1.8 V178 nC- 55 C+ 175 C370 WEnhancement  
NTH4L025N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 16
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USD 16.8184

Multiples of: 1

Through Hole N - Channel1 Channel650 V99 A28.5 mOhms- 8 V , + 22 V4.3 V164 nC- 55 C+ 175 C348 WEnhancement EliteSiC
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