About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
Manufacturer
Global Stock ⓘ (▲▼)Price(USD

(Ex. GST)(▲▼)
Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
SCT3105KRC14


SiC MOSFETs 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 173
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USD 13.125

Multiples of: 1

Through Hole N - Channel1 Channel1200 V24 A137 mOhms- 4 v to 22 V5.6 V51 nC- 55 C+ 175 C134 WEnhancement  
NVBG025N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 97
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USD 37.1021

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V106 A28.5 mOhms- 8 V , + 22 V4.3 V164 nC- 55 C+ 175 C395 WEnhancement EliteSiC
TW015Z65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 97
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USD 40.824

Multiples of: 1

Through Hole N - Channel1 Channel650 V100 A15 mOhms- 10 V , + 25 V5 V128 nC + 175 C342 WEnhancement  
TW015N65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 96
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USD 42.7455

Multiples of: 1

Through Hole N - Channel1 Channel650 V100 A21 mOhms- 10 V , + 25 V5 V128 nC- 55 C+ 175 C342 WEnhancement  
MSC035SMA070S


SiC MOSFETs MOSFET SIC 700 V 35 mOhm TO-268
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 95
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USD 9.13

Multiples of: 1

SMD/SMT N - Channel1 Channel700 V65 A44 mOhms- 10 V , + 23 V1.9 V99 nC- 55 C+ 175 C206 WEnhancement  
TW060N120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 91
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USD 16.064

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV36 A182 mOhms- 10 V , + 25 V5 V46 nC- 55 C+ 175 C170 WEnhancement  
TW030N120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247 30mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 91
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USD 23.6856

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV 40 mOhms- 10 V , + 25 V5 V82 nC- 55 C+ 175 C249 WEnhancement  
MSC015SMA070B


SiC MOSFETs MOSFET SIC 700 V 15 mOhm TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 90
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USD 21.439

Multiples of: 1

Through Hole N - Channel1 Channel700 V140 A19 mOhms- 10 V , + 25 V1.9 V215 nC- 55 C+ 175 C400 WEnhancement  
SP25N120CTK


TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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Siliup Availability : 87
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USD 5.4255

Multiples of: 1

                
SP50N120CTK


TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Siliup Availability : 87
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USD 5.562

Multiples of: 1

                
TW015N120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 87
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USD 57.519

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV100 A182 mOhms- 10 V , + 25 V5 V158 nC- 55 C+ 175 C431 WEnhancement  
IMZA120R007M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 86
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USD 38.995

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV225 A7 mOhms- 10 V , + 23 V4.2 V220 nC- 55 C+ 150 C750 WEnhancement  
TW107N65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247 107mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 84
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USD 7.733

Multiples of: 1

Through Hole N - Channel1 Channel650 V20 A113 mOhms- 10 V , + 25 V5 V28 nC- 55 C+ 175 C111 WEnhancement  
TW048Z65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 82
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USD 9.8861

Multiples of: 1

Through Hole N - Channel1 Channel650 V40 A48 mOhms- 10 V , + 25 V5 V41 nC + 175 C132 WEnhancement  
GC3M0016120D


TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SUPSiC Availability : 82
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USD 14.9651

Multiples of: 1

                
GC3M0120100K


TO247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SUPSiC Availability : 79
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USD 6.2839

Multiples of: 1

                
IMT65R050M2HXUMA1


SiC MOSFETs SILICON CARBIDE MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 78
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USD 3.916

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V48.1 A62 mOhms- 7 V , + 23 V5.6 V22 nC- 55 C+ 175 C237 WEnhancement  
C3M0280090J


SiC MOSFETs G3 SiC MOSFET 900V, 280 mOhm
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Wolfspeed Availability : 78
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USD 4.565

Multiples of: 1

Smd/Smt N - Channel1 Channel900 V11 A385 mOhms- 8 v , + 18 V1.8 V9.5 nC- 55 C+ 150 C50 WEnhancement  
C3M0040120K


SiC MOSFETs SiC, MOSFET, 40mohm, 1200V, TO-247-4, Industrial
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed Availability : 67
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USD 8.4753

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV66 A40 mOhms- 4 V , + 15 V3.6 V99 nC- 40 C+ 175 C326 WEnhancement  
C3M0075120K


SiC MOSFETs SIC MOSFET 1200V 75 mOhm
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Wolfspeed Availability : 17
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USD 10.5558

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV30 A75 mOhms- 4 V , + 15 V1.7 V51 nC- 55 C+ 150 C119 WEnhancement  
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