About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
Manufacturer
Global Stock ⓘ (▲▼)Price(USD

(Ex. GST)(▲▼)
Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
IMZC120R026M2HXKSA1


SiC MOSFETs CoolSiC MOSFET discrete 1200V, 26 mohm G2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 134
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USD 10.087

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV69 A25 mOhms- 10 V , + 25 V5.1 V124 nC- 55 C+ 175 C289 WEnhancement CoolSiC
TW048N65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247 48mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 131
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USD 11.1888

Multiples of: 1

Through Hole N - Channel1 Channel650 V40 A65 mOhms- 10 V , + 25 V5 V41 nC- 55 C+ 175 C132 WEnhancement  
IMTA65R026M2HXTMA1


SiC MOSFETs CoolSiC MOSFET 750 V G2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 126
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USD 7.172

Multiples of: 1

SMD/SMT N - Channel 650 V79 A33 mOhms- 7 V to + 23 V5.6 V42 nC- 55 C+ 175 C357 WEnhancement CoolSiC
NVBG040N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, D2PAK?7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 126
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USD 19.668

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV60 A56 mOhms- 15 V , + 25 V4.3 V106 nC- 55 C+ 175 C357 WEnhancement EliteSiC
NTH4L028N170M1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 125
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USD 30.899

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV81 A40 mOhms- 15 V , + 25 V4.3 V200 nC- 55 C+ 175 C535 WEnhancement EliteSiC
AIMW120R035M1HXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 124
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USD 24.948

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV52 A35 mOhms- 7 V , + 23 V4.5 V59 nC- 55 C+ 175 C228 WEnhancement CoolSiC
G3R20MT17N


SiC MOSFETs 1700V 20mohm SOT-227 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 121
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USD 128.458

Multiples of: 1

Screw Mount N - Channel1 Channel1.7 kV92 A20 mOhms- 5 V , + 15 V2.7 V256 nC- 55 C+ 175 C476 WEnhancement  
GC2M0160120K


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC Availability : 120
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USD 2.7308

Multiples of: 1

                
GC2M0080120K


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SUPSiC Availability : 116
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USD 4.4679

Multiples of: 1

                
SCT3080KLGC11


SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 116
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USD 10.15

Multiples of: 1

Through Hole N - Channel1 Channel1200 V31 A80 mOhms- 4 v , 22 V2.7 V60 nC- 55 C+ 175 C165 WEnhancement  
GC3M0021120K


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC Availability : 113
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USD 17.6607

Multiples of: 1

                
C2M0025120D


SiC MOSFETs SIC MOSFET 1200V RDS ON 25 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed Availability : 112
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USD 84.4313

Multiples of: 1

Through Hole N - Channel1 Channel1200 V90 A25 mOhms- 10 v , + 25 V2.4 V406 nC- 55 C+ 150 C463 WEnhancement  
IMZ120R090M1H


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 110
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USD 7.6533

Multiples of: 1

                
TW030Z120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 107
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USD 22.6683

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV60 A30 mOhms- 10 V , + 25 V5 V82 nC + 175 C249 WEnhancement  
MSC080SMA120S


SiC MOSFETs MOSFET SIC 1200 V 80 mOhm TO-268
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 104
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USD 11.799

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV35 A100 mOhms- 10 V , + 23 V1.8 V64 nC- 55 C+ 175 C182 WEnhancement  
TW027Z65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 27mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 104
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USD 17.798

Multiples of: 1

Through Hole N - Channel1 Channel650 V58 A27 mOhms- 10 V , + 25 V5 V65 nC + 175 C156 WEnhancement  
GC2M0040120D


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC Availability : 100
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USD 5.2451

Multiples of: 1

                
SCT2450KEHRC11


SiC MOSFETs 1200V, 10A, THD, Silicon-carbide (SiC) MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 100
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USD 7.9904

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV10 A585 mOhms- 6 V , + 22 V4 V27 nC + 175 C85 WEnhancement  
G3R40MT12K


SiC MOSFETs 1200V 40mohm TO-247-4 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 98
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USD 14.96

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV55 A40 mOhms- 5 V , + 15 V2.7 V88 nC- 55 C+ 175 C228 WEnhancement  
SCT2H12NYTB


SiC MOSFETs N-Ch 1700V 4A 44W SiC Silicon Carbide
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 0
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USD 3.042

Multiples of: 1

Smd/Smt N - Channel1 Channel1700 V4 A1.15 Ohms22 V1.6 V14 nC + 175 C44 WEnhancement  
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