Best SiC MOSFETs in USA, Australia & India.

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Image	Stock Code(▲▼)	Description	Manufacturer	Global Stock ⓘ (▲▼)	Price(USD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

GC3M0032120D

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC

Availability : 97
Ship by Fri. 05 Sep to Wed. 10 Sep

September 2025

September 2025
	S	M	T	W	T	F	S
36	31	1	2	3	4	5	6
37	7	8	9	10	11	12	13
38	14	15	16	17	18	19	20
39	21	22	23	24	25	26	27
40	28	29	30	1	2	3	4
41	5	6	7	8	9	10	11

USD 6.1541

Multiples of: 1

NVBG025N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 97
Ship by Wed. 20 Aug to Fri. 22 Aug

August 2025

August 2025
	S	M	T	W	T	F	S
31	27	28	29	30	31	1	2
32	3	4	5	6	7	8	9
33	10	11	12	13	14	15	16
34	17	18	19	20	21	22	23
35	24	25	26	27	28	29	30
36	31	1	2	3	4	5	6

USD 37.1021

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

106 A

28.5 mOhms

- 8 V , + 22 V

4.3 V

164 nC

- 55 C

+ 175 C

395 W

Enhancement

EliteSiC

TW015Z65C,S1F

SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba

Availability : 97
Ship by Wed. 20 Aug to Fri. 22 Aug

August 2025

August 2025
	S	M	T	W	T	F	S
31	27	28	29	30	31	1	2
32	3	4	5	6	7	8	9
33	10	11	12	13	14	15	16
34	17	18	19	20	21	22	23
35	24	25	26	27	28	29	30
36	31	1	2	3	4	5	6

USD 40.824

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

100 A

15 mOhms

- 10 V , + 25 V

5 V

128 nC

+ 175 C

342 W

Enhancement

TW015N65C,S1F

SiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba

Availability : 96
Ship by Wed. 20 Aug to Fri. 22 Aug

August 2025

August 2025
	S	M	T	W	T	F	S
31	27	28	29	30	31	1	2
32	3	4	5	6	7	8	9
33	10	11	12	13	14	15	16
34	17	18	19	20	21	22	23
35	24	25	26	27	28	29	30
36	31	1	2	3	4	5	6

USD 42.7455

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

100 A

21 mOhms

- 10 V , + 25 V

5 V

128 nC

- 55 C

+ 175 C

342 W

Enhancement

MSC035SMA070S

SiC MOSFETs MOSFET SIC 700 V 35 mOhm TO-268

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

Availability : 95
Ship by Wed. 20 Aug to Fri. 22 Aug

August 2025

August 2025
	S	M	T	W	T	F	S
31	27	28	29	30	31	1	2
32	3	4	5	6	7	8	9
33	10	11	12	13	14	15	16
34	17	18	19	20	21	22	23
35	24	25	26	27	28	29	30
36	31	1	2	3	4	5	6

USD 9.13

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

700 V

65 A

44 mOhms

- 10 V , + 23 V

1.9 V

99 nC

- 55 C

+ 175 C

206 W

Enhancement

TW060N120C,S1F

SiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba

Availability : 91
Ship by Wed. 20 Aug to Fri. 22 Aug

August 2025

August 2025
	S	M	T	W	T	F	S
31	27	28	29	30	31	1	2
32	3	4	5	6	7	8	9
33	10	11	12	13	14	15	16
34	17	18	19	20	21	22	23
35	24	25	26	27	28	29	30
36	31	1	2	3	4	5	6

USD 16.064

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

36 A

182 mOhms

- 10 V , + 25 V

5 V

46 nC

- 55 C

+ 175 C

170 W

Enhancement

TW030N120C,S1F

SiC MOSFETs G3 1200V SiC-MOSFET TO-247 30mohm

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba

Availability : 91
Ship by Wed. 20 Aug to Fri. 22 Aug

August 2025

August 2025
	S	M	T	W	T	F	S
31	27	28	29	30	31	1	2
32	3	4	5	6	7	8	9
33	10	11	12	13	14	15	16
34	17	18	19	20	21	22	23
35	24	25	26	27	28	29	30
36	31	1	2	3	4	5	6

USD 23.6856

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

40 mOhms

- 10 V , + 25 V

5 V

82 nC

- 55 C

+ 175 C

249 W

Enhancement

GC3M0060065K

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC

Availability : 89
Ship by Fri. 05 Sep to Wed. 10 Sep

September 2025

September 2025
	S	M	T	W	T	F	S
36	31	1	2	3	4	5	6
37	7	8	9	10	11	12	13
38	14	15	16	17	18	19	20
39	21	22	23	24	25	26	27
40	28	29	30	1	2	3	4
41	5	6	7	8	9	10	11

USD 3.731

Multiples of: 1

SP50N120CTF

TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Siliup

Availability : 87
Ship by Fri. 05 Sep to Wed. 10 Sep

September 2025

September 2025
	S	M	T	W	T	F	S
36	31	1	2	3	4	5	6
37	7	8	9	10	11	12	13
38	14	15	16	17	18	19	20
39	21	22	23	24	25	26	27
40	28	29	30	1	2	3	4
41	5	6	7	8	9	10	11

USD 5.3003

Multiples of: 1

SP25N120CTK

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Siliup

Availability : 87
Ship by Fri. 05 Sep to Wed. 10 Sep

September 2025

September 2025
	S	M	T	W	T	F	S
36	31	1	2	3	4	5	6
37	7	8	9	10	11	12	13
38	14	15	16	17	18	19	20
39	21	22	23	24	25	26	27
40	28	29	30	1	2	3	4
41	5	6	7	8	9	10	11

USD 5.4255

Multiples of: 1

SP50N120CTK

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Siliup

Availability : 87
Ship by Fri. 05 Sep to Wed. 10 Sep

September 2025

September 2025
	S	M	T	W	T	F	S
36	31	1	2	3	4	5	6
37	7	8	9	10	11	12	13
38	14	15	16	17	18	19	20
39	21	22	23	24	25	26	27
40	28	29	30	1	2	3	4
41	5	6	7	8	9	10	11

USD 5.562

Multiples of: 1

SP90N120CTK

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Siliup

Availability : 87
Ship by Fri. 05 Sep to Wed. 10 Sep

September 2025

September 2025
	S	M	T	W	T	F	S
36	31	1	2	3	4	5	6
37	7	8	9	10	11	12	13
38	14	15	16	17	18	19	20
39	21	22	23	24	25	26	27
40	28	29	30	1	2	3	4
41	5	6	7	8	9	10	11

USD 24.4077

Multiples of: 1

TW015N120C,S1F

SiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba

Availability : 87
Ship by Wed. 20 Aug to Fri. 22 Aug

August 2025

August 2025
	S	M	T	W	T	F	S
31	27	28	29	30	31	1	2
32	3	4	5	6	7	8	9
33	10	11	12	13	14	15	16
34	17	18	19	20	21	22	23
35	24	25	26	27	28	29	30
36	31	1	2	3	4	5	6

USD 57.519

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

100 A

182 mOhms

- 10 V , + 25 V

5 V

158 nC

- 55 C

+ 175 C

431 W

Enhancement

TW107N65C,S1F

SiC MOSFETs G3 650V SiC-MOSFET TO-247 107mohm

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba

Availability : 84
Ship by Wed. 20 Aug to Fri. 22 Aug

August 2025

August 2025
	S	M	T	W	T	F	S
31	27	28	29	30	31	1	2
32	3	4	5	6	7	8	9
33	10	11	12	13	14	15	16
34	17	18	19	20	21	22	23
35	24	25	26	27	28	29	30
36	31	1	2	3	4	5	6

USD 7.733

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

20 A

113 mOhms

- 10 V , + 25 V

5 V

28 nC

- 55 C

+ 175 C

111 W

Enhancement

SCT3105KRC14

SiC MOSFETs 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

Availability : 84
Ship by Wed. 20 Aug to Fri. 22 Aug

August 2025

August 2025
	S	M	T	W	T	F	S
31	27	28	29	30	31	1	2
32	3	4	5	6	7	8	9
33	10	11	12	13	14	15	16
34	17	18	19	20	21	22	23
35	24	25	26	27	28	29	30
36	31	1	2	3	4	5	6

USD 13.9963

Multiples of: 1

Through Hole

N - Channel

1 Channel

1200 V

24 A

137 mOhms

- 4 v to 22 V

5.6 V

51 nC

- 55 C

+ 175 C

134 W

Enhancement

TW048Z65C,S1F

SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba

Availability : 82
Ship by Wed. 20 Aug to Fri. 22 Aug

August 2025

August 2025
	S	M	T	W	T	F	S
31	27	28	29	30	31	1	2
32	3	4	5	6	7	8	9
33	10	11	12	13	14	15	16
34	17	18	19	20	21	22	23
35	24	25	26	27	28	29	30
36	31	1	2	3	4	5	6

USD 9.8861

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

40 A

48 mOhms

- 10 V , + 25 V

5 V

41 nC

+ 175 C

132 W

Enhancement

HC1M40120J

TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

Availability : 82
Ship by Fri. 05 Sep to Wed. 10 Sep

September 2025

September 2025
	S	M	T	W	T	F	S
36	31	1	2	3	4	5	6
37	7	8	9	10	11	12	13
38	14	15	16	17	18	19	20
39	21	22	23	24	25	26	27
40	28	29	30	1	2	3	4
41	5	6	7	8	9	10	11

USD 12.43

Multiples of: 1

GC3M0016120D

TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC

Availability : 82
Ship by Fri. 05 Sep to Wed. 10 Sep

September 2025

September 2025
	S	M	T	W	T	F	S
36	31	1	2	3	4	5	6
37	7	8	9	10	11	12	13
38	14	15	16	17	18	19	20
39	21	22	23	24	25	26	27
40	28	29	30	1	2	3	4
41	5	6	7	8	9	10	11

USD 14.9651

Multiples of: 1

Hot

IMZ120R045M1XKSA1

SiC MOSFETs Y

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

Availability : 64
Ship by Fri. 05 Sep to Wed. 10 Sep

September 2025

September 2025
	S	M	T	W	T	F	S
36	31	1	2	3	4	5	6
37	7	8	9	10	11	12	13
38	14	15	16	17	18	19	20
39	21	22	23	24	25	26	27
40	28	29	30	1	2	3	4
41	5	6	7	8	9	10	11

USD 5.5342

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

52 A

59 mOhms

- 10 V , + 20 V

3.5 V

52 nC

- 55 C

+ 175 C

228 W

Enhancement

CoolSiC

IMW120R220M1HXKSA1

SiC MOSFETs Y

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

Availability : 0
Request Quote

USD 6.0221

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

13 A

289 mOhms

- 7 V , + 23 V

5.7 V