About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
MSC060SMA070B4


SiC MOSFETs MOSFET SIC 700 V 60 mOhm TO-247-4
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Microchip Availability : 53
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USD 6.798

Multiples of: 1

Through Hole N - Channel1 Channel700 V39 A75 mOhms- 10 V , + 23 V1.9 V56 nC- 55 C+ 175 C143 WEnhancement  
CDMS24783-120 SL


SiC MOSFETs 18A,1200V Through-Hole MOSFET N-Channel SiC
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Central Semiconductor Availability : 53
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USD 22.165

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV18 A150 mOhms20 V4 V55 C- 55 C+ 175 C28 WDepletion  
TW015Z120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 15mohm
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Toshiba Availability : 52
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USD 54.8739

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV100 A15 mOhms- 10 V , + 25 V5 V158 nC + 175 C431 WEnhancement  
SCT4045DW7HRTL


SiC MOSFETs TO263 750V 31A N-CH SIC
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ROHM Availability : 49
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USD 8.591

Multiples of: 1

SMD/SMT N - Channel1 Channel750 V31 A45 mOhms- 4 V , + 21 V4.8 V63 nC + 175 C93 WEnhancementAEC - Q101 
TW060Z120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 60mohm
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Toshiba Availability : 49
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USD 12.7008

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV36 A60 mOhms- 10 V , + 25 V5 V46 nC + 175 C170 WEnhancement  
DMWSH120H90SCT7


SiC MOSFETs SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS
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Diodes Incorporated Availability : 48
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USD 5.0715

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV38.2 A90 mOhms- 4 V , + 15 V3.5 V54.6 nC- 55 C+ 175 C197 WEnhancement  
MSC180SMA120S


SiC MOSFETs MOSFET SIC 1200 V 180 mOhm TO-268
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Microchip Availability : 48
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USD 11.116

Multiples of: 1

  N - Channel 1.2 kV 180 mOhms         
IMT65R015M2HXUMA1


SiC MOSFETs SILICON CARBIDE MOSFET
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Infineon Availability : 47
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USD 12.694

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V131 A18 mOhms- 7 V to 23 V4.5 V148 nC- 55 C+ 175 C535 WEnhancement CoolSiC
TW083Z65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 46
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USD 7.8507

Multiples of: 1

Through Hole N - Channel1 Channel650 V30 A83 mOhms- 10 V , + 25 V5 V28 nC + 175 C111 WEnhancement  
SCT3030KLGC11


SiC MOSFETs N-Ch 1200V SiC 72A 30mOhm TrenchMOS
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ROHM Availability : 46
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USD 75.3

Multiples of: 1

Through Hole N - Channel1 Channel1200 V72 A30 mOhms- 4 v to 22 V5.6 V131 nC- 55 C+ 175 C339 WEnhancement  
DMWSH120H90SCT7Q


SiC MOSFETs SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS
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Diodes Incorporated Availability : 45
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USD 7.216

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV38.2 A90 mOhms- 4 V , + 15 V3.5 V54.6 nC- 55 C+ 175 C197 WEnhancement  
TW083N65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247 83mohm
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Toshiba Availability : 43
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USD 8.9208

Multiples of: 1

Through Hole N - Channel1 Channel650 V20 A145 mOhms- 10 V , + 25 V5 V21 nC- 55 C+ 175 C76 WEnhancement  
IMZ120R030M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 42
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USD 10.0569

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV56 A40 mOhms- 7 V , + 23 V5.7 V63 nC- 55 C+ 150 C227 WEnhancement CoolSiC
GP2T040A120H


SiC MOSFETs SiC MOSFET 1200V 40mohm TO-247-4L
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SemiQ Availability : 41
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USD 14.0218

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV63 A37 mOhms- 10 V , + 25 V4 V118 nC- 55 C+ 175 C322 W   
TW045Z120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm
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Toshiba Availability : 39
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USD 15.6434

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV40 A45 mOhms- 10 V , + 25 V5 V57 nC + 175 C182 WEnhancement  
TW140Z120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 140mohm
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Toshiba Availability : 38
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USD 7.271

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV20 A140 mOhms- 10 V , + 25 V5 V24 nC + 175 C107 WEnhancement  
MSC180SMA120B


SiC MOSFETs MOSFET SIC 1200 V 180 mOhm TO-247
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Microchip Availability : 38
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USD 10.052

Multiples of: 1

Through Hole N - Channel 1.2 kV 180 mOhms         
GP2T040A120U


SiC MOSFETs SiC MOSFET 1200V 40mohm TO-247-3L
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SemiQ Availability : 38
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USD 12.3403

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV63 A37 mOhms- 10 V , + 25 V4 V118 nC- 55 C+ 175 C322 WDepletion  
AIMZA75R016M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 38
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USD 17.5857

Multiples of: 1

Through Hole N - Channel1 Channel750 V89 A22 mOhms- 2 V , + 20 V5.6 V81 nC- 55 C+ 175 C319 WEnhancement  
NVH4L060N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 44mohm, 650V, M2, TO247-4L
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ON Semiconductor Availability : 34
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USD 9.8629

Multiples of: 1

Through Hole N - Channel1 Channel650 V47 A70 mOhms- 8 V , + 22 V4.3 V74 nC- 55 C+ 175 C176 WEnhancement EliteSiC
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