e TM ADVANCED EPAD LINEAR DEVICES, INC. ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD V = -3.50V GS(th) PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode Functional replacement of Form B (NC) relay N-Channel MOSFETs matched at the factory using ALDs proven EPAD CMOS Zero power fail safe circuits technology. These devices are intended for low voltage, small signal applica- Backup battery circuits tions. They are excellent functional replacements for normally-closed relay ap- Power failure detector plications, as they are normally on (conducting) without any power applied, but Fail safe signal detector could be turned off or modulated when system power supply is turned on. These Source followers and buffers MOSFETs have the unique characteristics of, when the gate is grounded, oper- Precision current mirrors ating in the resistance mode for low drain voltage levels and in the current Precision current sources source mode for higher voltage levels and providing a constant drain current. Capacitives probes Sensor interfaces ALD114835/ALD114935 MOSFETs are designed for exceptional device elec- Charge detectors trical characteristics matching. As these devices are on the same monolithic Charge integrators chip, they also exhibit excellent temperature tracking characteristics. They are Differential amplifier input stage versatile as design components for a broad range of analog applications such High side switches as basic building blocks for current sources, differential amplifier input stages, Peak detectors transmission gates, and multiplexer applications. Besides matched pair electri- Sample and Hold cal characteristics, each individual MOSFET also exhibits well controlled pa- Alarm systems rameters, enabling the user to depend on tight design limits. Even units from Current multipliers different batches and different date of manufacture have correspondingly well Analog switches matched characteristics. Analog multiplexers Voltage comparators These depletion mode devices are built for minimum offset voltage and differ- Level shifters ential thermal response, and they are designed for switching and amplifying applications in single 5V to +/-5V systems where low input bias current, low PIN CONFIGURATIONS input capacitance and fast switching speed are desired. These devices exhibit well controlled turn-off and sub-threshold charactersitics and therefore can be used in designs that depend on sub-threshold characteristics. ALD114835 The ALD114835/ALD114935 are suitable for use in precision applications which - - V V IC* 1 16 IC* require very high current gain, beta, such as current mirrors and current sources. A sample calculation of the DC current gain at a drain current of 3mA and input 15 G G 2 N1 N2 leakage current of 30pA at 25C is 3mA/30pA = 100,000,000. For most applica- M 1 M 2 tions, connect the V+ pin to the most positive voltage and the V- and IC pins to 14 D 3 D N1 N2 the most negative voltage in the system. All other pins must have voltages + + S 4 13 12 V V within these voltage limits at all times. - - 5 V 12 S V 34 FEATURES D 6 11 D N4 N3 M 4 M 3 Depletion mode (normally ON) G 7 10 G N4 N3 Precision Gate Threshold Voltages: -3.50V +/- 0.05V Nominal R V = 0.0V of 540 DS(ON) GS 8 9 IC* IC* - - Matched MOSFET-to-MOSFET characteristics V V Tight lot-to-lot parametric control SCL, PCL PACKAGES Low input capacitance V match (V ) 20mV GS(th) OS 12 ALD114935 High input impedance 10 typical Positive, zero, and negative V temperature coefficient GS(th) - - V V 8 DC current gain >10 1 8 IC* IC* Low input and output leakage currents G 2 7 G N2 N1 ORDERING INFORMATION (L suffix denotes lead-free (RoHS)) M 1 M 2 D 3 6 D N1 N2 Operating Temperature Range* - S - V 0C to +70C0C to +70C 4 V 5 12 16-Pin 16-Pin 8-Pin 8-Pin SAL, PAL PACKAGES SOIC Plastic Dip SOIC Plastic Dip Package Package Package Package *IC pins are internally connected, connect to V- ALD114835SCL ALD114835PCL ALD114935SAL ALD114935PAL * Contact factory for industrial temp. range or user-specified threshold voltage values 2016 Advanced Linear Devices, Inc., Vers. 2.3 www.aldinc.com 1 of 12 E N A D E L BABSOLUTE MAXIMUM RATINGS Drain-Source voltage, V 10.6V DS Gate-Source voltage, V 10.6V GS Power dissipation 500 mW Operating temperature range SCL, PCL, SAL, PAL 0C to +70C Storage temperature range -65C to +150C Lead temperature, 10 seconds +260C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS + - V = +5V V = -5V T = 25C unless otherwise specified A ALD114835/ALD114935 Parameter Symbol Min Typ Max Unit Test Conditions Gate Threshold Voltage V -3.55 -3.50 -3.45 V I = 1A, V = 0.1V GS(th) DS DS Offset Voltage V 720 mV OS V -V GS(th)1 GS(th)2 Offset VoltageTempco TC 5 V/ CV = V VOS DS1 DS2 Gate Threshold Voltage TC -1.7 mV/ CI = 1A, V = 0.1V VGS(th) DS DS Tempco 0.0 I = 20A, V = 0.1V DS DS +1.6 I = 40A, V = 0.1V DS DS Drain Source On Current I 12.0 mA V = +6.0V, V = +5V DS(ON) GS DS 3.0 V = +0.5V, V = +5V GS DS Forward Transconductance G 1.4 mmho V = +0.5V FS GS V = +5.5V DS Transconductance Mismatch G 1.8 % FS Output Conductance G 68 mho V = +0.5V OS GS V = +5.5V DS Drain Source On Resistance R 540 V = +0.0V DS(ON) GS V = +0.1V DS Drain Source On Resistance R 5% DS(ON) Tolerance Drain Source On Resistance R 0.5 % DS(ON) Mismatch - Drain Source Breakdown BV 10 V V = V = -4.5V DSX GS Voltage I = 1.0A DS 1 Drain Source Leakage Current I 10 400 pA V = -4.5V, V =+5V DS(OFF) GS DS 4nA T = 125C A 1 Gate Leakage Current I 3 200 pA V = +5V, V = 0V GSS GS DS 1nA T =125C A Input Capacitance C 2.5 pF ISS Transfer Reverse Capacitance C 0.1 pF RSS + Turn-on Delay Time t 10 ns V = 5V, R = 5K on L + Turn-off Delay Time t 10 ns V = 5V, R = 5K off L Crosstalk 60 dB f = 100KHz 1 Notes: Consists of junction leakage currents ALD114835/ALD114935, Vers. 2.3 Advanced Linear Devices 2 of 12