Product Information

SI1330EDL-T1-E3

SI1330EDL-T1-E3 electronic component of Vishay

Datasheet
MOSFET 60V Vds 20V Vgs SC70-3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.091 ea
Line Total: USD 0.091

1 - Global Stock
Ships to you between
Fri. 06 Oct to Thu. 12 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between Fri. 06 Oct to Thu. 12 Oct

MOQ : 1
Multiples : 1
1 : USD 0.091

22601 - Global Stock


Ships to you between Thu. 12 Oct to Mon. 16 Oct

MOQ : 1
Multiples : 1
1 : USD 0.3348
10 : USD 0.2916
100 : USD 0.2187
500 : USD 0.1875
1000 : USD 0.18
3000 : USD 0.1716
45000 : USD 0.1692

2568 - Global Stock


Ships to you between
Fri. 13 Oct to Wed. 18 Oct

MOQ : 1
Multiples : 1
1 : USD 0.6895
10 : USD 0.5691
30 : USD 0.5177
100 : USD 0.4532
500 : USD 0.4253
1000 : USD 0.4081

     
Manufacturer
Vishay
Product Category
MOSFET
RoHS - XON
Y Icon ROHS
Id - Continuous Drain Current
250 mA
Vds - Drain-Source Breakdown Voltage
60 V
Rds On - Drain-Source Resistance
2.5 Ohms
Transistor Polarity
N - Channel
Vgs th - Gate-Source Threshold Voltage
1 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
310 mW
Mounting Style
Smd/Smt
Package / Case
SOT - 323 - 3
Packaging
Cut Tape
Technology
Si
Number of Channels
1 Channel
Vgs - Gate-Source Voltage
10 V
Qg - Gate Charge
0.4 nC
Channel Mode
Enhancement
Tradename
Trenchfet
Configuration
Single
Series
Si1
Transistor Type
1 N - Channel
Brand
Vishay / Siliconix
Forward Transconductance - Min
350 Ms
Cnhts
8541290000
Hts Code
8541290095
Mxhts
85412999
Product Type
Mosfet
Factory Pack Quantity :
3000
Subcategory
Mosfets
Taric
8541290000
Typical Turn-Off Delay Time
12.8 ns
Typical Turn-On Delay Time
3.8 ns
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Si1330EDL Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 2.5 at V = 10 V 0.25 GS TrenchFET Power MOSFET 60 3 at V = 4.5 V 0.23 GS ESD Protected: 2000 V 8 at V = 3 V 0.05 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS P-Channel Driver - Notebook PC SOT-323 SC-70 (3-LEADS) - Servers D G 1 Marking Code 3 D KD XX Lot Traceability G and Date Code S 2 Part Code Top View Ordering Information: Si1330EDL-T1-E3 (Lead (Pb)-free) Si1330EDL-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 0.25 0.24 A a Continuous Drain Current (T = 150 C) I J D T = 70 C 0.2 0.19 A A Pulsed Drain Current I 1.0 DM a Continuous Source Current (Diode Conduction) I 0.26 0.23 S T = 25 C 0.31 0.28 A a Maximum Power Dissipation P W D T = 70 C 0.20 0.18 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 355 400 a R Maximum Junction-to-Ambient thJA Steady State 380 450 C/W Maximum Junction-to-Foot (Drain) Steady State R 285 340 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 72861 www.vishay.com S10-0721-Rev. B, 29-Mar-10 1 YYSi1330EDL Vishay Siliconix a SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 10 A 60 DS GS D V Gate-Threshold Voltage V V = V , I = 250 A 1 2.0 2.5 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 10 V 1 GSS DS GS V = 60 V, V = 0 V 1 A DS GS Zero Gate Voltage Drain Current I DSS V = 60 V, V = 0 V, T = 55 C 10 DS GS J V = 10 V, V = 7.5 V 0.5 GS DS b On-State Drain Current I = 4.5 V, V = 10 V 0.4 V A D(on) GS DS V = 3 V, V = 10 V 0.05 GS DS V = 10 V, I = 0.25 A 1.0 2.5 GS D b Drain-Source On-Resistance R V = 4.5 V, I = 0.2 A 1.4 3 DS(on) GS D V = 3 V, I = 0.025 A 3.0 8 GS D b Forward Transconductance g V = 10 V, I = 0.25 A 350 mS fs DS D Diode Forward Voltage V I = 0.23 A, V = 0 V 0.83 1.2 V SD S GS b Dynamic Total Gate Charge Q 0.4 0.6 g V = 10 V, V = 4.5 V DS GS Gate-Source Charge Q 0.11 nC gs I 0.25 A D Gate-Drain Charge Q 0.15 gd Gate Resistance R 173 g t 3.8 10 d(on) Turn-On Time V = 30 V, R = 150 DD L t 4.8 15 r I 0.2 A, V = 10 V ns D GEN t 12.820 d(off) R = 10 g Turn-Off Time t 9.6 15 f Notes: a. Pulse test: PW 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1.0 1.0 T = - 55 C 6 V J V = 10 V, 7 V GS 25 C 0.8 5 V 0.8 125 C 0.6 0.6 4 V 0.4 0.4 0.2 0.2 3 V 0 0.0 012345 012345 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72861 2 S10-0721-Rev. B, 29-Mar-10 I - Drain Current (A) D I - Drain Current (A) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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