X-On Electronics has gained recognition as a prominent supplier of JANTX1N6638US bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. JANTX1N6638US bipolar transistors - bjt are a product manufactured by Aeroflex. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

JANTX1N6638US Aeroflex

JANTX1N6638US electronic component of Aeroflex
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Part No.JANTX1N6638US
Manufacturer: Aeroflex
Category:Bipolar Transistors - BJT
Description: Diode Switching 125V 0.3A 2-Pin US
Datasheet: JANTX1N6638US Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

160: USD 10.2675 ea
Line Total: USD 1642.8

Availability - 0
MOQ: 160  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 160
Multiples : 1
160 : USD 10.2675

     
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We are delighted to provide the JANTX1N6638US from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTX1N6638US and other electronic components in the Bipolar Transistors - BJT category and beyond.

Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features Available in JAN, JANS, JANTX, JANTXV per MILPRF19500/578 & /609 Switching Diodes NonCavity Glass Plackage Category I Metallurgically Bonded Maximum Ratings Operating Temperature: -65C to +175C Thermal Resistance: Storage Temperature: -65C to +175C (R ): U & US 40 C/W maximum at L = 0 JEC Operating Current: 300mA See Figure 6 Derating: See Figure 5 (R ): Leaded 150 C/W maximum at L = .375 JL See Figure 7 Surge Current: I = 2.5A, half sine wave, FSM P = 8.3ms Thermal Impedance: (Z ): 25 C/W maximum W JX Electrical Specifications @ TA = + 25 C ( Unless Otherwise Specified ) V / t@C C t I I I I FR fr T1 T2 rr R1 R2 R3 R4 V @ I V I = 200 mA V =0 V V =1.5 V I = 10mA V =V V =20V V =20V V = V BR R WRM F R R R R RWM R R R RWM TYPES I = 10mA T = 150C T = 150C F A A V(pk) A V(pk) V t FR fr V(pk) ns pF pF ns nA dc nA dc A dc A dc 1N6638, U & US 150 100 125 5.0 20 2.5 2.0 4.5 35 500 50 100 1N6639, U & US 100 10 75 5.0 10 2.5 4.0 100 90 1N6640, U & US 75 10 50 5.0 10 2.5 4.0 100 90 1N6641, U & US 75 10 50 5.0 10 3.0 5.0 100 90 1N6642, U & US 100 100 75 5.0 20 5.0 2.8 5.0 25 500 50 100 1N6643, U & US 75 100 50 5.0 20 5.0 2.8 6.0 50 500 75 100 V @ I V @ I I F F F2 F F TYPES T = -55C A V dc V dc V dc mA (min) (max) (max) (pulsed) 1N6638, U & US 1.1 1.2 200 0.8 10 1N6639, U & US 1.2 1.3 500 1N6640, U & US 0.54 0.62 - 1 0.76 0.86 50 0.82 0.92 100 0.87 1.0 1.1 200 1N6641, U & US 1.1 1.2 200 1N6642, U & US 0.8 10 1.2 1.2 100 1N6643, U & US 0.8 10 1.2 1.4 100 1 Revision Date: 2/5/2013 Switching Diodes 1N6638 Series Outline Drawing LEADED DESIGN DATA CASE: D5D, Hermetically sealed glass case, per MILPRF19500/578 & /609 LEAD FINISH: Tin/Lead LEAD MATERIAL: Copper clad steel POLARITY: Cathode end is banded. PACKAGE WEIGHT: 0.150g U & US DESIGN DATA CASE: D5D, Hermetically sealed glass case, per MILPRF19500/578 & /609 LEAD FINISH: Tin/Lead END CAP MATERIAL (U, US): Copper POLARITY: Cathode end is banded. PACKAGE WEIGHT: 0.095g MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +4PPM/C. The COE of the Mounting Surface System should be selected to provide a suitable match with this device. NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Dimension BD shall be measured at the largest diameter. 3. The specified lead diameter applies in the zone between .050 inch (1.27 mm) from the diode body to the end of the lead. Outside of this zone lead shall not exceed BD. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 5. Usuffix parts are structurally identical to the USsuffix parts. 2 TEL: 603-641-SEMI (7364) metelics-sales@aeroflex.com www.aeroflex.com/metelics Revision Date: 2/5/2013

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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