2N3715 & 2N3716 NPN High Power Silicon Transistor Rev. V2 Features Available in JAN, JANTX, JANTXV per MIL-PRF- 19500/408 TO-3 (TO-204AA) Package Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. Off Characteristics I = 10 mAdc, 2N3715 60 C Collector - Emitter Breakdown Voltage V Vdc (BR)CEO I = 10 mAdc, 2N3716 80 C V = 60 Vdc, 2N3715 10 CE Collector - Base Cutoff Current I Adc CEO V = 80 Vdc, 2N3716 10 CE Emitter - Base Cutoff Current V = 7 Vdc I mAdc 1 EB EBO V = 60 Vdc, V = 1.5 Vdc, 2N3715 10 CE BE Collector - Emitter Cutoff Current I Adc CEX V = 80 Vdc, V = 1.5 Vdc, 2N3716 10 CE BE V = 50 Vdc, 2N3715 10 CE Collector - Emitter Cutoff Current I Adc CEO V = 70 Vdc, 2N3716 10 CE 1 On Characteristics I = 1 Adc, V = 2 Vdc 50 150 C CE I = 3 Adc, V = 2 Vdc 30 120 C CE Forward Current Transfer Ratio H - FE I = 5 Adc, V = 2 Vdc 10 C CE I = 10 Adc, V = 4 Vdc 5 C CE I = 5 Adc, I = 0.5 Adc 1.0 C B Collector - Emitter Saturation Voltage V Vdc CE(SAT) I = 10 Adc, I = 2.0 Adc 2.5 C B I = 5 Adc, I = 0.5 Vdc 1.5 C B Emitter - Base Saturation Voltage V Vdc BE(SAT) I = 10 Adc, I = 2.0 Vdc 3.0 C B Dynamic Characteristics Magnitude of Common Emitter Small-Signal I = 4 Adc, V = 4 Vdc, f = 100 kHz H 4 20 C CE FE Short-Circuit Forward Current Transfer Ratio Small-Signal Short-Circuit I = 0.5 Adc, V = 10 Vdc, f = 1 kHz H 30 300 C CE FE Forward Current Transfer Ratio Output Capacitance V = 10 Vdc, I = 0, 100 kHz f 1 MHz C pF 500 CB E OBO Safe Operating Area DC Tests: T = +25 C, I Cycle, t = 1.0 s C Test 1: V = 15 Vdc, I = 10 Adc CE C Test 2: V = 40 Vdc, I = 3.75 Adc CE C Test 3: V = 55 Vdc, I = 0.9 Adc, 2N3715 CE C V = 65 Vdc, I = 0.9 Adc, 2N3716 CE C 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 1 11 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com 2N3715 & 2N3716 NPN High Power Silicon Transistor Rev. V2 Absolute Maximum Ratings Ratings Symbol Value Collector - Emitter Voltage 2N3715 V 60 Vdc CEO 2N3716 80 Vdc Collector - Base Voltage 2N3715 V 80 Vdc CBO 2N3716 100 Vdc Emitter - Base Voltage V 7 Vdc EBO Base Current I 4 Vdc B Collector Current I 10 Adc C Total Power Dissipation 5 W 2 T = 25C P A T 117 W T = 25C A Operating & Storage Temperature Range T , T -65C to +200C OP STG 2. Derate linearly 28.57 mW / C for T = 25 C A Thermal Characteristics Characteristics Symbol Max. Value Thermal Resistance, Junction to Case R 1.5C/W JC Outline Drawing 2 22 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com