Product Information

MMBT8050D

MMBT8050D electronic component of Agertech

Datasheet
100nA 40V 350mW 600mA 160@100mA,1V 100MHz 500mV@500mA,50mA NPN +150℃@(Tj) SOT-23 Bipolar Transistors - BJT ROHS

Manufacturer: Agertech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.0153 ea
Line Total: USD 0.76

2667 - Global Stock
Ships to you between
Tue. 07 May to Fri. 10 May
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
97 - Global Stock


Ships to you between
Tue. 07 May to Fri. 10 May

MOQ : 50
Multiples : 50

Stock Image

MMBT8050D
Agertech

50 : USD 0.0158
500 : USD 0.0129
3000 : USD 0.0105
6000 : USD 0.0096
24000 : USD 0.0086
51000 : USD 0.0083

     
Manufacturer
Product Category
Category
Rohs
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Transistor Type
Operating Temperature
LoadingGif

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The MMBT8050D is a NPN Bjt rohs bipolar transistor manufactured by Agertech. This device features a voltage rating of 40V and can handle current up to 600mA. It has a power dissipation of 350mW and a collector-base breakdown voltage of 50mA. Its collector-emitter saturation voltage is 500mV@500mA and the current gain is 160@100mA. It also has a 100nA hFE rating and a frequency response of 100MHz. This device is housed in a SOT-23 package and has a junction temperature rating of +150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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