AS4C128M8D1-6TIN Alliance Memory

AS4C128M8D1-6TIN electronic component of Alliance Memory
AS4C128M8D1-6TIN Alliance Memory
AS4C128M8D1-6TIN DRAM
AS4C128M8D1-6TIN  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of AS4C128M8D1-6TIN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C128M8D1-6TIN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. AS4C128M8D1-6TIN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 1G, 2.5V, 166MHz 128M x 8 DDR1
Datasheet: AS4C128M8D1-6TIN Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 43.8065
5$ 42.7606
10$ 42.2842
25$ 41.2382
50$ 37.2097
108$ 34.9831
216$ 34.0615
540$ 34.0615
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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We are delighted to provide the AS4C128M8D1-6TIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C128M8D1-6TIN and other electronic components in the DRAM category and beyond.

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AS4C128M8D1-6TIN Revision History AS4C128M8D1-6TIN 66pin TSOP II PACKAGE Revision Details Date Rev 1.0 Initial Issue Dec. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice - 1 of 57 - Confidential Rev. 1.0 Dec. 2016AS4C128M8D1-6TIN Features Description - High speed data transfer rates with system frequency The AS4C128M8D1-6TIN is a four bank up to 166MHz DDR DRAM organized as 4 banks x 32Mbit x 8. The - Data Mask for Write Control AS4C128M8D1-6TIN achieves high speed data - Four Banks controlled by BA0 & BA1 transfer rates by employing a chip architecture that - Programmable CAS Latency: 2, 2.5, 3 pre-fetches multiple bits and then synchronizes - Programmable Wrap Sequence: Sequential the output data to a system clock. or Interleave All of the control, address, circuits are synchronized - Programmable Burst Length: with the positive edge of an externally supplied clock. I/O 2, 4, 8 for Sequential Type transactions are occurring on both edges of DQS. 2, 4, 8 for Interleave Type Operating the four memory banks in an interleaved - Automatic and Controlled Precharge Command fashion allows random access operation to occur at a - Power Down Mode higher rate than is possible with standard DRAMs. A - Auto Refresh and Self Refresh sequential and gapless data rate is possible - Refresh Interval: 8192 cycles/64 ms depending on burst length, CAS latency and speed - Available in 66 Pin TSOP II grade of the device. - SSTL-2 Compatible I/Os - Double Data Rate (DDR) - Bidirectional Data Strobe (DQS) for input and output data, active on both edges - On-Chip DLL aligns DQ and DQs transitions with CK transitions - Differential clock inputs CK and CK - VDD = 2.5V 0.2V, VDDQ = 2.5V 0.2V - tRAS lockout supported - Concurrent auto precharge option is supported Table 1. Ordering Information Part Number Org Temperature MaxClock (MHz) Package AS4C128M8D1-6TIN 128Mx8 Industrial -40C to +85C 166 66pin TSOPII Confidential - 2 of 57 - Rev. 1.0 Dec. 2016

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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