Product Information

AS4C16M16SB-6TINTR

AS4C16M16SB-6TINTR electronic component of Alliance Memory

Datasheet
DRAM
Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 3.6445 ea
Line Total: USD 3644.5

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

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AS4C16M16SB-6TINTR
Alliance Memory

1000 : USD 3.7602
5000 : USD 3.4917

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

AS4C16M16SB-6TINTR
Alliance Memory

1 : USD 4.6155
10 : USD 4.2359
100 : USD 3.7612
250 : USD 3.7612
500 : USD 3.6426
1000 : USD 3.5121
2000 : USD 3.4171
5000 : USD 3.251
10000 : USD 3.2391

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Additional Infomation About Product

AS4C16M16SB Revision History 256M SDRAM 54pin TSOP II Package Revision Details Date Rev 1.0 Initial Release Jan. 2021 Confidential -155- Rev.1.0 Jan. 2021AS4C16M16SB 16M x 16 bit Synchronous DRAM (SDRAM) Features Overview Fast access time from clock: 5/5.4 ns The AS4C16M16SB SDRAM is a high-speed Fast clock rate: 166/143 MHz CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 Fully synchronous operation DRAM with a synchronous interface (all signals are Internal pipelined architecture registered on the positive edge of the clock signal, 4M word x 16-bit x 4-bank CLK). Read and write accesses to the SDRAM are Programmable Mode registers burst oriented accesses start at a selected location - CAS Latency: 2 or 3 and continue for a programmed number of locations - Burst Length: 1, 2, 4, 8, or full page in a programmed sequence. Accesses begin with - Burst Type: Sequential or Interleaved the registration of a BankActivate command which is then followed by a Read or Write command. - Burst stop function Auto Refresh and Self Refresh The AS4C16M16SB provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, 8192 refresh cycles/64ms with a burst termination option. An auto precharge CKE power down mode function may be enabled to provide a self-timed row Single +3.3V 0.3V power supply precharge that is initiated at the end of the burst Operating temperature: sequence. The refresh functions, either Auto or Self Commercial:TA = 0 ~ 70C Refresh are easy to use. By having a programmable mode register, the system can choose the most Industrial:TA = -40 ~ 85C suitable modes to maximize its performance. These Interface: LVTTL devices are well suited for applications requiring 54-pin 400 mil plastic TSOP II package high memory bandwidth and particularly well suited - Pb free and Halogen free to high performance PC applications. Table 1. Key Specifications -6 -7 Unit AS4C16M16SB 6 7 ns tCK3 Clock Cycle time(min.) 5 5.4 ns tAC3 Access time from CLK (max.) 42 42 ns tRAS Row Active time(min.) 60 63 tRC Row Cycle time(min.) ns Table 2. Ordering Information Package Temperature Temp Range Frequency Part Number Commercial AS4C16M16SB-7TCN 143MHz 54 Pin TSOP II 0C to 70C AS4C16M16SB-6TIN 166MHz 54 Pin TSOP II Industrial -40C to 85C Confidential -255- Rev.1.0 Jan. 2021

HS Compliance

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:

Alliance Memory may also be referenced as

ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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