AS4C32M16SA-7BINTR Alliance Memory

AS4C32M16SA-7BINTR electronic component of Alliance Memory
AS4C32M16SA-7BINTR Alliance Memory
AS4C32M16SA-7BINTR DRAM
AS4C32M16SA-7BINTR  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of AS4C32M16SA-7BINTR DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C32M16SA-7BINTR DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. AS4C32M16SA-7BINTR
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 512M 3.3V 143MHz 32M x 16 IND TEMP
Datasheet: AS4C32M16SA-7BINTR Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 14.5966
N/A

Obsolete
   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AS4C32M16SA-7BINTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C32M16SA-7BINTR and other electronic components in the DRAM category and beyond.

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AS4C32M16SA 0ELW 6LQJOH DWD 5DWH 6 5 6 5 0 0 0 %DQNV 512Mbit Single-Data-Rate (SDR) SDRAM AS4C32M16SA-7TCN & AS4C32M16SA-7TIN AS4C32M16SA-7CN & AS4C32M16SA-7 IN 32Mx16 (8M x 16 x 4 Banks) OOLDQFH 0HPRU ,QF 7D ORU :D 6DQ &DUORV & 7(/ ) OOLDQFH 0HPRU ,QF UHVHUYHV WKH ULJKW WR FKDQJH SURGXFWV RU VSHFLILFDWLRQ ZLWKRXW QRWLFH 5HY 4 Mar 6AS4C32M16SA 0ELW 6LQJOH DWD 5DWH 6 5 6 5 0 0 0 %DQNV REVISION HISTORY Rev. 1.0 March 2012 initial version Rev. 1.1 April 2012 Revised Operating- Standby- and Refresh Currents Rev. 2.0 February 2014 Die Shrink A revision Z Rev. 4.0 March 2016 Correcting errors: Page 3 transfer rates up to 166 MHz ===> transfer rates up to 143MHz Page 4 data transfer rates up to 166 MHz =====> data transfer rates up to 143 MHz data rate of up to 166 MHz=========>data rate of upto 143 MHz Page 5 - pin labelling errors I/O1 ==> DQ0 I/O16 ==> DQ15 Page 6 = pin labelling errors VDD===> VCC VDDQ===> VCCQ OOLDQFH 0HPRU ,QF 7D ORU :D 6DQ &DUORV & 7(/ ) OOLDQFH 0HPRU ,QF UHVHUYHV WKH ULJKW WR FKDQJH SURGXFWV RU VSHFLILFDWLRQ ZLWKRXW QRWLFH 5HY 4 Mar 6

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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