X-On Electronics has gained recognition as a prominent supplier of AS4C32M8D1-5TIN dram across the USA, India, Europe, Australia, and various other global locations. AS4C32M8D1-5TIN dram are a product manufactured by Alliance Memory. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

AS4C32M8D1-5TIN Alliance Memory

AS4C32M8D1-5TIN electronic component of Alliance Memory
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Part No.AS4C32M8D1-5TIN
Manufacturer: Alliance Memory
Category:DRAM
Description: DRAM
Datasheet: AS4C32M8D1-5TIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 4.9359
10 : USD 4.5443
108 : USD 4.0223
216 : USD 4.0223
540 : USD 3.8917
1080 : USD 3.7612
2592 : USD 3.5714
5076 : USD 3.4765
10044 : USD 3.4053
N/A

Obsolete
     
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RoHS - XON
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Cnhts
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We are delighted to provide the AS4C32M8D1-5TIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C32M8D1-5TIN and other electronic components in the DRAM category and beyond.

AS4C32M8D1-5TCN AS4C32M8D1-5TIN Revision History AS4C32M8D1 - 66pin TSOPII PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet Jun 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/57 - Rev.1.0 June 2016AS4C32M8D1-5TCN AS4C32M8D1-5TIN Features Description - High speed data transfer rates with system The AS4C32M8D1 is a four bank DDR DRAM frequency up to 200 MHz organized as 4 banks x 8Mbit x 8. The AS4C32M8D1 - Data Mask for Write Control achieves high speed data transfer rates by employing a - Four Banks controlled by BA0 & BA1 chip architecture that prefetches multiple bits and then - Programmable CAS Latency: 2.5, 3, 4 synchronizes the output data to a system clock. - Programmable Wrap Sequence: Sequential All of the control, address, circuits are synchronized or Interleave with the positive edge of an externally supplied clock. - Programmable Burst Length: I/O transactions are occurring on both edges of DQS. 2, 4, 8 for Sequential Type Operating the four memory banks in an interleaved 2, 4, 8 for Interleave Type fashion allows random access operation to occur at a - Automatic and Controlled Precharge Command higher rate than is possible with standard DRAMs. A - Power Down Mode sequential and gapless data rate is possible depending - Auto Refresh and Self Refresh on burst length, CAS latency and speed grade of the - Refresh Interval: 8192 cycles/64 ms device. - Available in 66-pin 400 mil TSOP - SSTL-2 Compatible I/Os - Double Data Rate (DDR) - Bidirectional Data Strobe (DQS) for input and output data, active on both edges - On-Chip DLL aligns DQ and DQs transitions with CK transitions - Differential clock inputs CK and CK - Power Supply 2.5V 0.2V for DDR333, 2.6V 0.1V for DDR400 - tRAS lockout supported - Concurrent auto precharge option is supported Table 1. Ordering Information Part Number Org Temperature MaxClock (MHz) Package AS4C32M8D1-5TCN 32Mx8 Commercial 0C to 70C 200 66-pin TSOPII 66-pin TSOPII AS4C32M8D1-5TIN 32Mx8 Industrial -40C to 85C 200 Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency tRCD (ns) tRP (ns) DDR1-400 200MHz 3 15 15 Confidential - 2/57 - Rev.1.0 June 2016

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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