X-On Electronics has gained recognition as a prominent supplier of AS4C512M16D3LA-10BCN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C512M16D3LA-10BCN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C512M16D3LA-10BCN Alliance Memory

AS4C512M16D3LA-10BCN electronic component of Alliance Memory
AS4C512M16D3LA-10BCN Alliance Memory
AS4C512M16D3LA-10BCN DRAM
AS4C512M16D3LA-10BCN  Semiconductors

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Part No. AS4C512M16D3LA-10BCN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 8G 512Mx16 933MHz 1.35V DDR3 ET
Datasheet: AS4C512M16D3LA-10BCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 28.9225 ea
Line Total: USD 28.92 
Availability - 338
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
69
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 180
Multiples : 180
180 : USD 24.55

10
Ship by Fri. 27 Jun to Wed. 02 Jul
MOQ : 1
Multiples : 1
1 : USD 43.6873
30 : USD 41.7058

338
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 28.9225
10 : USD 26.015
25 : USD 25.047
50 : USD 25.014
100 : USD 23.771
180 : USD 22.165
2520 : USD 22.165

   
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We are delighted to provide the AS4C512M16D3LA-10BCN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C512M16D3LA-10BCN and other electronic components in the DRAM category and beyond.

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AS4C512M16D3LA Revision History 8Gbit DDR3L SDRAM 8 BANKS X 64Mbit X 16 - Dual Die Package (DDP) 96ball FBGA Package Revision Details Date Rev 1.0 Preliminary datasheet Feb. 2019 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 41 - Rev.1.0 Feb.2019AS4C512M16D3LA Specifications Features - Density : 8G bits - Double-data-rate architecture two data transfers per clock cycle - Organization : - The high-speed data transfer is realized by the 8 bits prefetch pipe- - 64M words x 16 bits x 8 banks lined architecture - Package : - Bi-directional differential data strobe (DQS and DQS ) is transmitted/ - 96-ball FBGA received with data for capturing data at the receiver - Two 512Mbit x 8 dies stacked (DDP) - DQS is edge-aligned with data for READs center-aligned with data - Lead-free (RoHS compliant) and Halogen-free for WRITEs - Power supply : VDD, VDDQ = 1.35V (1.283V to 1.45V) - Differential clock inputs (CK and CK) - -Backward compatible to VDD, VDDQ =1.5V 0.075V - DLL aligns DQ and DQS transitions with CK transitions - Data rate : 1866Mbps - Commands entered on each positive CK edge data and data mask - 2KB page size referenced to both edges of DQS - Row address: A0 to A15 - Data mask (DM) for write data - Column address: A0 to A9 - Posted CAS by programmable additive latency for better command - Eight internal banks for concurrent operation and data bus efficiency - Burst lengths (BL) : 8 and 4 with Burst Chop (BC) - On-Die Termination (ODT) for better signal quality - Burst type (BT) : - Synchronous ODT - Sequential (8, 4 with BC) - Dynamic ODT - Interleave (8, 4 with BC) - Asynchronous ODT - CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11, 13 - Multi Purpose Register (MPR) for pre-defined pattern read out - CAS Write Latency (CWL) : 5, 6, 7, 8 ,9 - ZQ calibration for DQ drive and ODT - Precharge : auto precharge option for each burst access - RESET pin for Power-up sequence and reset function - Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) - SRT range : Normal/extended - Refresh : auto-refresh, self-refresh - Programmable Output driver impedance control - Refresh cycles : - Average refresh period 7.8 s at -40C Tc +85C 3.9 s at +85C < Tc +105C - Operating case temperature range - Comercial Tc = 0C to +95C - Industrial Tc = -40C to +95C - Automotive Tc = -40C to +105C Table 1. Ordering Information Org Temperature Max Clock (MHz) Product part No Package 933 AS4C512M16D3LA-10BCN 512M x 16 96-ball FBGA Commercial 0C to 95C 933 512M x 16 Industrial -40C to 95C 96-ball FBGA AS4C512M16D3LA-10BIN 933 AS4C512M16D3LA-10BAN 96-ball FBGA Automotive -40C to 105C 512M x 16 Table 2. Speed Grade Information CAS Latency tRCD(ns) Speed Grade tRP(ns) Clock Frequency DDR3-1866 933 MHz 13 13.91 13.91 Confidential - 2 of 41 - Rev.1.0 Feb.2019

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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