AS4C64M16D3A-12BCN Alliance Memory

AS4C64M16D3A-12BCN electronic component of Alliance Memory
AS4C64M16D3A-12BCN Alliance Memory
AS4C64M16D3A-12BCN DRAM
AS4C64M16D3A-12BCN  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of AS4C64M16D3A-12BCN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C64M16D3A-12BCN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. AS4C64M16D3A-12BCN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 1G 1.5V 800MHz 64M x 16 DDR3
Datasheet: AS4C64M16D3A-12BCN Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 209
QtyUnit Price
1$ 35.2646
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.9321
10$ 5.4123
25$ 5.3084
50$ 5.2737
100$ 4.788
250$ 4.7628
500$ 4.6494
1000$ 4.5738
2000$ 4.4352
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.5645
5$ 3.2329
N/A

Obsolete
   
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We are delighted to provide the AS4C64M16D3A-12BCN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C64M16D3A-12BCN and other electronic components in the DRAM category and beyond.

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AS4C64M16D3A-12BIN AS4C64M16D3A-12BCN Revision History AS4C64M16D3A-12BCN/AS4C64M16D3A-12BIN 96 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet Aug. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/86 - Rev.1.0 Aug.2016AS4C64M16D3A-12BIN AS4C64M16D3A-12BCN Features Overview JEDEC Standard Compliant The 1Gb Double-Data-Rate-3 DRAMs is double data rate architecture to achieve high-speed operation. It is Power supplies: V & V = +1.5V 0.075V DD DDQ internally configured as an eight bank DRAM. Operating temperature: The 1Gb chip is organized as 8Mbit x 16 I/Os x 8 Commercial: 0C to 95C (TC) bank devices. These synchronous devices achieve Industrial :-40C to 95C (TC) high speed double-data-rate transfer rates of up to 1 600 Mb/sec/pin for general applications. Supports JEDEC clock jitter specification The chip is designed to comply with all key DDR3 Fully synchronous operation DRAM key features and all of the control and address Fast clock rate: 800MHz inputs are synchronized with a pair of externally Differential Clock, CK & CK supplied differential clocks. Inputs are latched at the Bidirectional differential data strobe cross point of differential clocks (CK rising and CK - DQS & DQS falling). All I/Os are synchronized with differential DQS 8 internal banks for concurrent operation pair in a source synchronous fashion. These devices operate with a single 1.5V 0.075V 8n-bit prefetch architecture power supply and are available in BGA packages. Pipelined internal architecture Precharge & active power down Programmable Mode & Extended Mode registers Additive Latency (AL): 0, CL-1, CL-2 Programmable Burst lengths: 4, 8 Burst type: Sequential / Interleave Output Driver Impedance Control 8192 refresh cycles / 64ms - Average refresh period 7.8s -40 TC +85 3.9s +85 TC +95 Write Leveling ZQ Calibration Dynamic ODT (Rtt Nom & Rtt WR) RoHS compliant Auto Refresh and Self Refresh 96-ball 8 x 13 x 1.0mm FBGA package - Pb and Halogen Free Table 1. Ordering Information Temperature Org Max Clock (MHz) Product part No Package 800 AS4C64M16D3A-12BCN 64M x 16 Commercial 0C to 95C 96-ball FBGA 800 AS4C64M16D3A-12BIN 64M x 16 Industrial -40C to 95C 96-ball FBGA Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency t (ns) t (ns) RCD RP 13.75 13.75 DDR3-1600 800 MHz 11 Confidential - 2/86 - Rev.1.0 Aug.2016

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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