X-On Electronics has gained recognition as a prominent supplier of AS4C64M8D1-5BIN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C64M8D1-5BIN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C64M8D1-5BIN Alliance Memory

AS4C64M8D1-5BIN electronic component of Alliance Memory
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Part No.AS4C64M8D1-5BIN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
Datasheet: AS4C64M8D1-5BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.658 ea
Line Total: USD 5.66 
Availability - 232
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
232
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 5.658
10 : USD 4.692
100 : USD 4.6805
240 : USD 4.393
480 : USD 4.209
1200 : USD 4.186
2640 : USD 4.14
5040 : USD 4.048
10080 : USD 4.0365

   
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We are delighted to provide the AS4C64M8D1-5BIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C64M8D1-5BIN and other electronic components in the DRAM category and beyond.

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512M DDR1-AS4C64M8D1 Revision History AS4C64M8D1-66pin TSOPII and 60-ball TFBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet D 201 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential -1- Rev.1.0 May 2015512M DDR1-AS4C64M8D1 Features Fast clock rate: 250/200MHz Differential Clock CK & CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture Four internal banks, 16M x 8-bit for each bank Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved Individual byte write mask control DM Write Latency = 0 Auto Refresh and Self Refresh 8192 refresh cycles / 64ms Precharge & active power down Power supplies: VDD & VDDQ = 2.5V 0.2V Operating Temperature: - Commercial (0~70 C) - Industrial (-40~85 C) Interface: SSTL 2 I/O Interface Package: 66 Pin TSOP II, 0.65mm pin pitch - Pb and Halogen free Package: 60-Ball, 8x13x1.2 mm (max) TFBGA - Pb free and Halogen Free Confidential -2- Rev.1.0 May 2015

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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