AO3409 30V P-Channel MOSFET General Description Product Summary V -30V The AO3409 uses advanced trench technology to provide DS excellent R and low gate charge. This device is DS(ON) I (at V =-10V) -2.6A D GS suitable for use as a load switch or in PWM applications. R (at V =-10V) < 110m DS(ON) GS R (at V =-4.5V) < 180m DS(ON) GS SOT23 D Top View Bottom View D D G G S S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS T =25C -2.6 A Continuous Drain I D T =70C A Current -2.2 A C Pulsed Drain Current I -20 DM T =25C 1.4 A P W D B Power Dissipation T =70C 1 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 70 90 C/W R A D JA Maximum Junction-to-Ambient Steady-State 100 125 C/W Steady-State Maximum Junction-to-Lead R 63 80 C/W JL Rev 9: November 2010 www.aosmd.com Page 1 of 5 AO3409 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =-250A Gate Threshold Voltage -1.4 -1.9 -2.4 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -20 A GS DS D(ON) V =-10V, I =-2.6A 77 110 GS D m R Static Drain-Source On-Resistance T =125C 100 140 DS(ON) J V =-4.5V, I =-2A 125 180 m GS D V =-5V, I =-2.6A g Forward Transconductance 5 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.8 -1 V S GS SD I Maximum Body-Diode Continuous Current -1.5 A S DYNAMIC PARAMETERS C Input Capacitance 197 240 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 42 pF oss GS DS C Reverse Transfer Capacitance 26 37 pF rss R Gate resistance V =0V, V =0V, f=1MHz 3.5 7.2 11.0 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 4.3 5.2 nC g Q (4.5V) Total Gate Charge 2.2 3 nC g V =-10V, V =-15V, I =-2.6A GS DS D Q Gate Source Charge 0.7 nC gs Q Gate Drain Charge 1.1 nC gd t Turn-On DelayTime 7.5 ns D(on) t Turn-On Rise Time V =-10V, V =-15V, R =5.8, 4.1 ns r GS DS L R =3 t Turn-Off DelayTime 11.8 ns D(off) GEN t Turn-Off Fall Time 3.8 ns f t I =-2.6A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 11.3 14 ns Q I =-2.6A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 4.4 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 9: November 2010 www.aosmd.com Page 2 of 5