AO4413 30V P-Channel MOSFET General Description Product Summary V -30V The AO4413 uses advanced trench technology to DS provide excellent R , and ultra-low low gate charge DS(ON) I (at V =-20V) -15A D GS with a 25V gate rating. This device is suitable for use as a R (at V =-20V) < 7m DS(ON) GS load switch or in PWM applications. R (at V = -10V) < 8.5m DS(ON) GS RoHS and Halogen-Free Compliant 100% UIS Tested 100% R Tested g SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V 25 V GS T =25C -15 A Continuous Drain I D Current T =70C -12.8 A A C Pulsed Drain Current I -120 DM C Avalanche Current I , I 50 A AS AR C Avalanche energy L=0.1mH E , E 125 mJ AS AR T =25C 3.1 A P W D B T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 31 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 59 75 C/W Maximum Junction-to-Lead Steady-State R 16 24 C/W JL Rev 9: Jan 2010 www.aosmd.com Page 1 of 6 AO4413 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V DSS D GS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J I Gate-Body leakage current V =0V, V = 25V 100 nA DS GS GSS V Gate Threshold Voltage V =V I =-250A -1.5 -2.5 -3.5 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -120 A D(ON) GS DS V =-20V, I =-15A 5.3 7 GS D m R Static Drain-Source On-Resistance T =125C 7.5 9 DS(ON) J V =-10V, I =-15A 6.4 8.5 m GS D g Forward Transconductance V =-5V, I =-15A 35 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.7 -1 V SD S GS I Maximum Body-Diode Continuous Current -4 A S DYNAMIC PARAMETERS C Input Capacitance 2310 2890 3500 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 410 585 760 pF GS DS oss C Reverse Transfer Capacitance 280 470 660 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.9 3.8 5.7 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 40 51 61 nC g V =-10V, V =-15V, I =-15A Q Gate Source Charge 10 12 14 nC GS DS D gs Q Gate Drain Charge 10 16 22 nC gd t Turn-On DelayTime 16 ns D(on) t Turn-On Rise Time V =-10V, V =-15V, R =1.0, 12 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 4455 nnss GEN D(off) t Turn-Off Fall Time 22 ns f t I =-15A, dI/dt=100A/s 14 rr Body Diode Reverse Recovery Time F 18 22 ns Q I =-15A, dI/dt=100A/s 9 nC rr Body Diode Reverse Recovery Charge F 11 13 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 9: Jan 2010 www.aosmd.com Page 2 of 6