AO4444 80V N-Channel MOSFET TM SDMOS General Description Product Summary TM V 80V DS The AO4444 is fabricated with SDMOS trench I (at V =10V) 11A technology that combines excellent R with low gate DS(ON) D GS charge and low Qrr.The result is outstanding efficiency R (at V =10V) < 12m DS(ON) GS with controlled switching behavior. This universal R (at V = 7V) < 14.5m DS(ON) GS technology is well suited for PWM, load switching and general purpose applications. 100% UIS Tested 100% R Tested g SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 80 V DS Gate-Source Voltage V 25 V GS T =25C 11 A Continuous Drain I D Current T =70C 9 A A C Pulsed Drain Current I 80 DM C Avalanche Current I , I 45 A AS AR C Avalanche energy L=0.1mH E , E 101 mJ AS AR T =25C 3.1 A P W D B T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 31 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 59 75 C/W Maximum Junction-to-Lead Steady-State R 16 24 C/W JL Rev1: Nov. 2010 www.aosmd.com Page 1 of 6 AO4444 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 80 V D GS DSS V =80V, V =0V 10 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 50 J I Gate-Body leakage current V =0V, V = 25V 100 nA DS GS GSS V Gate Threshold Voltage V =V I =250A 2.6 3 3.8 V GS(th) DS GS D I On state drain current V =10V, V =5V 80 A D(ON) GS DS V =10V, I =11A 10 12 GS D m R Static Drain-Source On-Resistance T =125C 18 22 DS(ON) J V =7V, I =10A 11.6 14.5 m GS D g Forward Transconductance V =5V, I =11A 32 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 4.5 A S DYNAMIC PARAMETERS C Input Capacitance 1900 2386 2865 pF iss C Output Capacitance V =0V, V =40V, f=1MHz 190 276 360 pF GS DS oss C Reverse Transfer Capacitance 60 100 140 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.4 0.8 1.2 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 30 38 46 nC g V =10V, V =40V, I =11A Q Gate Source Charge 10 13 16 nC GS DS D gs Q Gate Drain Charge 6 10 14 nC gd t Turn-On DelayTime 13 ns D(on) t Turn-On Rise Time V =10V, V =40V, R =3.64, 9 ns r GS DS L R =3 t Turn-Off DelayTime 23 ns GEN D(off) t Turn-Off Fall Time 5 ns f t I =11A, dI/dt=500A/s 12 rr Body Diode Reverse Recovery Time F 18 24 ns Q I =11A, dI/dt=500A/s 45 nC rr Body Diode Reverse Recovery Charge F 65 85 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The value JA A in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Nov. 2010 www.aosmd.com Page 2 of 6