AO4496 General Description Product Summary The AO4496 uses advanced trench technology to V (V) = 30V DS provide excellent R with low gate charge. This I = 10A (V = 10V) DS(ON) D GS device is suitable for use as a DC-DC converter R < 19.5m (V = 10V) DS(ON) GS application. R < 26m (V = 4.5V) DS(ON) GS 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D DD D D G G S S S S Absolute Maximum Ratings T =25C unless otherwise noted J Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T =25C 10 Continuous Drain A A T =70C I Current 7.5 A D A B Pulsed Drain Current I 50 DM G Avalanche Current I 17 AR G Repetitive avalanche energy L=0.1mH E 14 mJ AR T =25C 3.1 A A P W Power Dissipation D T =70C 2.0 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 31 40 C/W R JA A Maximum Junction-to-Ambient Steady State 59 75 C/W C Steady State R 16 24 C/W Maximum Junction-to-Lead JL Alpha & Omega Semiconductor, Ltd. www.aosmd.comAO4496 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I = 250A, V = 0V 30 V D GS DSS V = 30V, V = 0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T = 55C 5 J I Gate-Body leakage current V = 0V, V = 20V 100 nA GSS DS GS V Gate Threshold Voltage V = V I = 250A 1.4 1.8 2.5 V GS(th) DS GS D I On state drain current V = 10V, V = 5V 50 A GS DS D(ON) V = 10V, I = 10A 16 19.5 GS D R Static Drain-Source On-Resistance T =125C 24 29 m DS(ON) J V = 4.5V, I = 7.5A 21 26 GS D g Forward Transconductance V = 5V, I = 10A 30 S FS DS D V Diode Forward Voltage I = 1A,V = 0V 0.76 1 V S GS SD I Maximum Body-Diode Continuous Current 3 A S DYNAMIC PARAMETERS C Input Capacitance 550 715 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 110 pF GS DS oss C Reverse Transfer Capacitance 55 pF rss V =0V, V =0V, f=1MHz R Gate resistance 3 4 4.9 GS DS g SSWWIITTCCHHIINNGG PPAARRAAMMEETTEERRSS Q (10V) Total Gate Charge 9.8 13 nC g Q (4.5V) Total Gate Charge 4.6 6.1 nC g V =10V, V =15V, I =10A GS DS D Q Gate Source Charge 1.8 nC gs Q Gate Drain Charge 2.2 nC gd t Turn-On DelayTime 5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R = 1.5, 3.2 ns r GS DS L R =3 t Turn-Off DelayTime 24 ns GEN D(off) t Turn-Off Fall Time 6 ns f t I =10A, dI/dt=500A/s 22 29 rr Body Diode Reverse Recovery Time F ns Q I =10A, dI/dt=500A/s 14 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T = 25 C. The JA A value in any given application depends on the user s specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using t 300s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The SOA A curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. 0 G. E and I ratings are based on low frequency and duty cycles to keep T =25C. AR AR j Rev5: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm