AO4611 60V Dual P + N-Channel MOSFET General Description Product Summary The AO4611 uses advanced trench technology N-Channel P-Channel MOSFETs to provide excellent R and low V (V) = 60V -60V DS(ON) DS gate charge. The complementary MOSFETs may I = 6.3A (V =10V) -4.9A D GS be used to form a level shifted high side switch, R DS(ON) and for a host of other applications. < 25m (V =10V) < 42m (V = -10V) GS GS < 30m (V =4.5V) < 52m (V = -4.5V) GS GS 100% UIS Tested 100% UIS Tested 100% Rg Tested 100% Rg Tested SOIC-8 D2 D1 Top View Bottom View Top View S2 D2 G2 D2 S1 D1 G2 G1 G1 D1 S2 S1 Pin1 n-channel p-channel Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage V 60 -60 V DS Gate-Source Voltage V 20 20 V GS T =25C Continuous Drain 6.3 -4.9 A A Current T =70C I 5 -3.9 A A D B Pulsed Drain Current I 40 -30 DM T =25C 2 2 A P W D Power Dissipation T =70C 1.28 1.28 A Junction and Storage Temperature Range T , T -55 to 150 -55 to 150 C J STG Thermal Characteristics: n-channel and p-channel Parameter Symbol Device Typ Max Units A Maximum Junction-to-Ambient t 10s n-ch 48 62.5 C/W R JA A Maximum Junction-to-Ambient Steady-State n-ch 74 110 C/W C Steady-State R n-ch 35 60 C/W Maximum Junction-to-Lead JL A t 10s Maximum Junction-to-Ambient p-ch 48 62.5 C/W R A JA Steady-State Maximum Junction-to-Ambient p-ch 74 110 C/W C Steady-State R p-ch 35 40 C/W Maximum Junction-to-Lead JL Alpha & Omega Semiconductor, Ltd.AO4611 N Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 60 V D GS DSS V =48V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.5 2.1 3 V GS(th) DS GS D I On state drain current V =10V, V =5V 40 A GS DS D(ON) V =10V, I =6.3A 20 25 GS D m R Static Drain-Source On-Resistance T =125C 34 42 DS(ON) J V =4.5V, I =5.7A 22 30 m GS D g Forward Transconductance V =5V, I =6.3A 27 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.74 1 V S GS SD I Maximum Body-Diode Continuous Current 3 A S DYNAMIC PARAMETERS C Input Capacitance 1920 2300 pF iss C Output Capacitance V =0V, V =30V, f=1MHz 155 pF GS DS oss C Reverse Transfer Capacitance 116 pF rss V =0V, V =0V, f=1MHz R Gate resistance 0.65 0.8 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 47.6 58 nC g Q (4.5V) Total Gate Charge 24.2 30 nC g V =10V, V =30V, I =6.3A GS DS D Q Gate Source Charge 6 nC gs Q Gate Drain Charge 14.4 nC gd t Turn-On DelayTime 7.6 ns D(on) V =10V, V =30V, R =4.7, t Turn-On Rise Time 5 ns r GS DS L t Turn-Off DelayTime R =3 28.9 ns GEN D(off) t Turn-Off Fall Time 5.5 ns f t I =6.3A, dI/dt=100A/s 33.2 40 rr Body Diode Reverse Recovery Time F ns Q I =6.3A, dI/dt=100A/s 43 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. Rev5: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd.