AO6408
20V N-Channel MOSFET
General Description Features
The AO6408 uses advanced trench technology to V (V) = 20V
DS
provide excellent R and low gate charge. It offers I = 8.8A (V = 10V)
DS(ON) D GS
operation over a wide gate drive range from 1.8V to
R < 18m (V = 10V)
DS(ON) GS
12V. It is ESD protected. This device is suitable for use
R < 20m (V = 4.5V)
DS(ON) GS
as a load switch.
R < 25m (V = 2.5V)
DS(ON) GS
R < 32m (V = 1.8V)
DS(ON) GS
ESD Rating: 2000V HBM
ESD Protected
100% UIS Tested
100% Rg Tested
D
TSOP-6
Top View
1 6
D D
G
2 5
D D
3 4
G S
S
Absolute Maximum Ratings T =25C unless otherwise noted
A
Parameter Symbol Maximum Units
Drain-Source Voltage V 20 V
DS
Gate-Source Voltage V 12 V
GS
T =25C 8.8
Continuous Drain
A
A
T =70C I A
Current 7
A D
B
Pulsed Drain Current I 40
DM
T =25C 2
A
P
W
D
Power Dissipation T =70C 1.28
A
Junction and Storage Temperature Range T , T -55 to 150 C
J STG
Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t 10s
47.5 62.5 C/W
R
A JA
Maximum Junction-to-Ambient Steady-State
74 110 C/W
C
Steady-State R 37 40 C/W
Maximum Junction-to-Lead
JL
Rev4: September 2010 www.aosmd.com Page 1 of 4 AO6408
Electrical Characteristics (T =25C unless otherwise noted)
J
Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
BV Drain-Source Breakdown Voltage I =250A, V =0V 20 V
DSS D GS
V =16V, V =0V 10
DS GS
I
Zero Gate Voltage Drain Current A
DSS
T =55C 25
J
I Gate-Source leakage current V =0V, V =10V 10 A
GSS DS GS
BV Gate-Source Breakdown Voltage V =0V, I =250uA 12 V
GSO DS G
V Gate Threshold Voltage V =V I =250A 0.5 0.75 1 V
GS(th) DS GS D
I On state drain current V =4.5V, V =5V 40 A
D(ON) GS DS
V =10V, I =8.8A 14.4 18
GS D
m
T =125C 18.5 23
J
R Static Drain-Source On-Resistance V =4.5V, I =8A 16 20 m
DS(ON)
GS D
V =2.5V, I =6A 20.5 25 m
GS D
V =1.8V, I =4A 25.6 32 m
GS D
g Forward Transconductance V =5V, I =8.8A 33 S
FS DS D
V Diode Forward Voltage I =1A 0.72 1 V
SD S
I Maximum Body-Diode Continuous Current 3 A
S
DYNAMIC PARAMETERS
C Input Capacitance 1810 2200 pF
iss
V =0V, V =10V, f=1MHz
C Output Capacitance 232 pF
GS DS
oss
C Reverse Transfer Capacitance 200 pF
rss
R Gate resistance V =0V, V =0V, f=1MHz 1.6 2.2
g GS DS
SWITCHING PARAMETERS
Q Total Gate Charge 17.9 22 nC
g
Q Gate Source Charge V =4.5V, V =10V, I =8.8A 1.5 nC
GS DS D
gs
Q Gate Drain Charge 4.7 nC
gd
t Turn-On DelayTime 3.3 ns
D(on)
t Turn-On Rise Time V =10V, V =10V, R =1.1, 5.9 ns
r GS DS L
R =3
t Turn-Off DelayTime 44 ns
GEN
D(off)
t Turn-Off Fall Time 7.7 ns
f
t I =8.8A, dI/dt=100A/s 22 27
rr Body Diode Reverse Recovery Time F ns
Q I =8.8A, dI/dt=100A/s 9.8 nC
rr Body Diode Reverse Recovery Charge F
2
A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The
JA A
value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient.
JA JL
D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA
A
curve provides a single pulse rating. Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Rev4: September 2010 www.aosmd.com Page 2 of 4