AO7407 20V P-Channel MOSFET General Description Product Summary V The AO7407 uses advanced trench technology to provide -20V DS excellent RDS(ON), low gate charge and operation with I (at V =-4.5V) -1.2A D GS gate voltages as low as 1.8V. This device is suitable for R (at V =-4.5V) < 135m DS(ON) GS use as a load switch or in PWM applications. R (at V =-2.5V) < 170m DS(ON) GS R (at V =-1.8V) < 220m DS(ON) GS SC-70 SC-70 DD ((SSOOTT--332233)) TToopp VViieeww BBoottttoomm VViieeww DD DD GG S S GG SS SS GG Absolute Maximum Ratings T =25C unless otherwise noted A PaParraammeeteterr SySymmbbooll MMaaxxiimmuumm UUnniitsts Drain-Source Voltage V -20 V DS Gate-Source Voltage V 8 V GS T =25C -1.2 A Continuous Drain I D Current T =70C -1 A A C Pulsed Drain Current I -10 DM T =25C 0.63 A P W D B T =70C Power Dissipation 0.4 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 160 200 C/W R A D JA Maximum Junction-to-Ambient Steady-State 180 220 C/W Maximum Junction-to-Lead Steady-State R 130 160 C/W JL Rev 4: June 2010 www.aosmd.com Page 1 of 5 AO7407 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -20 V DSS D GS V =-20V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J I Gate-Body leakage current V =0V, V = 8V 100 nA DS GS GSS V Gate Threshold Voltage V =V I =-250A -0.4 -0.65 -1 V GS(th) DS GS D I On state drain current V =-4.5V, V =-5V -10 A D(ON) GS DS V =-4.5V, I =-1.2A 65 135 GS D m T =125C 90 175 J R Static Drain-Source On-Resistance DS(ON) V =-2.5V, I =-1A 80 170 m GS D V =-1.8V, I =-1A 100 220 m GS D g Forward Transconductance V =-5V, I =-1.2A 10 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.7 -1 V SD S GS I Maximum Body-Diode Continuous Current -1 A S DYNAMIC PARAMETERS C Input Capacitance 560 745 pF iss C Output Capacitance V =0V, V =-10V, f=1MHz 80 pF GS DS oss C Reverse Transfer Capacitance 70 pF rss V =0V, V =0V, f=1MHz R Gate resistance 15 23.0 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 8.5 11 nC g Q Gate Source Charge V =-4.5V, V =-10V, I =-1.2A 1.2 nC GS DS D gs Q Gate Drain Charge 2.1 nC gd t Turn-On DelayTime 7.2 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==--44..55VV,, VV ==--1100VV,, RR ==88..33,, 3366 nnss r GS DS L R =3 t Turn-Off DelayTime 53 ns GEN D(off) t Turn-Off Fall Time 56 ns f t I =-1.2A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 37 49 ns Q I =-1.2A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 27 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: June 2010 www.aosmd.com Page 2 of 5